• Journal of Power Electronics
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• v.17 no.3
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• pp.601-609
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• 2017

Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.

• Journal of Power Electronics
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• v.5 no.1
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• pp.29-35
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• 2005

This paper presents a novel prototype of an active auxiliary quasi-resonant snubber(Auxiliary Quasi-Resonant Commutation Block-Link; ARCB)-assisted three phase voltage source soft switching space voltage vector modulated PFC rectifier, which uses Zero Voltage Soft Switching (ZVS) commutation. The operating principles of this digitally-controlled three phase soft switching PWM-PFC rectifier system with an instantaneous power feedback scheme are illustrated and its steady-state performance is evaluated using computer-aided simulation analysis.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.11
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• pp.142-149
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• 2003

Domain switching effect on crack growth in ferroelectric ceramics under combined electric and mechanical loading is investigated. The shape and size of the switching zone is shown to depend strongly on the relative magnitude between the applied electric field and stress field as well as on the ratio of the coercive electric field to the yield electric field. The toughening mechanism is thought to be ferroelectric domain switching leading to the development of a process zone around the crack. Crack-tip stress intensity factor induced by domain switching for the steady state crack growth is numerically obtained.

• 전기의세계
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• v.23 no.6
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• IEMEK Journal of Embedded Systems and Applications
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• v.5 no.1
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• pp.18-22
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• 2010

In real-time embedded systems, the responsibility is the most important thing because it is related to human life. Context switching is a part of which can slow down the responsibility. We therefore should minimize the amount of state that needs to be saved during context switching. In this paper, we introduce a new architecture (Register Farm) for context switching which can exchange two contexts in one cycle time. Although it might increase the cost of MCU design and the complexity of circuit, it cannot miss any interrupt during context switching. Consequently, Register Farm architecture can make embedded systems spread out in human life because it can increase reliability and responsibility in real time embedded systems.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.107-108
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• 2016

Solid State Transformer(SST) has been recently regarded as a good alternative to conventional low frequency transformer. SST is consist of several high voltage power stage, so it is important to select optimal semiconductor switches for specification. This paper presents optimal IGBT switches for low switching losses using analyzing switching characteristics of several high voltage IGBT switches. Double Pulse Tester(DPT) experiment is used to verify characteristics of this IGBT switches.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.839-842
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• 2004

We present a fast-switching electro-optical device based on flexoelectro-optic effect in short pitch cholesterics oriented in uniform lying helix texture. The device has two operating modes: amplitude and phase modulation mode. The amplitude modulation mode is a fast in-plane switching of the device optic axis that enables to achieve a high percent of modulation of the transmitted light intensity whereas the phase mode gives a continuous change of the refractive index and thus of the phase shift of the transmitted light. By using a small concentration of diacrylate monomer and selecting the illumination conditions we have been able to create a inhomogeneous polymeric network mostly localized at both substrate surfaces and stabilize the two switching modes.

• 전기의세계
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• v.21 no.3
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• pp.31-40
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• 1972

This study intends to investigate the optimal switching modes of a double-capacitive thermal system under different constraints on the state and the control variable, by the application of the Pontryagin's Minimum Principle. Throughout the development, the control effort is assumed to have two modes of state: M or zero and the terminal times being fixed. In the first part of this study, the Principle is discussed under various conditions for this particular problem, with different criterion functions and in the same time imposing a certain constraints; i) on the terminal states, ii) on functions of the terminal states. Depending upon the upper bound value of the control vector, possible driving modes of the states are studied from which particular optimal driving modes are extracted so as to meet the specified constraints and boundary conditions imposed in the problem. Numerical solutions are evaluated for an over0damped, double-capacitive thermal plant and the optimal solutions: the switching mode, the optimal switching time, and the control effort are compared with the analytical results, in the second part of this work, to confirm the development.

• Journal of Korean Institute of Industrial Engineers
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• v.36 no.2
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• pp.101-107
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• 2010

Among a variety of asset dynamics models in order to explain the common properties of financial underlying assets, parametric models are meaningful when their parameters are set reliably. There are two main methods from which we can obtain them. They are to use time-series data of an underlying price or the market option prices of the underlying at one time. Based on the Girsanov theorem, in the pure diffusion models, the parameters calibrated from the option prices should be partially equivalent to those from time-series underling prices. We call this phenomenon model consistency. In this paper, we verify that the two-state regime switching Black-Scholes model is superior in the sense of model consistency, comparing with two popular conventional models, the Black-Scholes model and Heston model.

• Bulletin of the Korean Mathematical Society
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• v.48 no.4
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• pp.737-757
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• 2011

This work is concerned with an optimal selling rule for a large position of stock in a market. Selling a large block of stock in a short period typically depresses the market, which would result in a poor filling price. In addition, the large selling intensity makes the regime more likely to be poor state in the market. In this paper, regime switching and depressing terms associated with selling intensity are considered on a set of geometric Brownian models to capture movements of underlying asset. We also consider the liquidation strategy to sell much smaller number of shares in a long period. The goal is to maximize the overall return under state constraints. The corresponding value function with the selling strategy is shown to be a unique viscosity solution to the associated HJB equations. Optimal liquidation rules are characterized by a finite difference method. A numerical example is given to illustrate the result.