• Current Photovoltaic Research
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• 제9권4호
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• pp.137-144
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• 2021

In this study, the microstructure of the CVD-fabricated Cu(In,Ga)Se₂ (CIGSe) absorber layer by simulating the stacking sequence used in a co-evaporation method, and changes solar cell performance were investigated. The absorber layer prepared by stacking CuSe and (In,Ga)Se between InSe is separated into Ga-free CuInSe₂ and Ga-rich CIGSe, and transformed to CIGSe by selenization heat treatment with slight improvement in the the solar cell efficiency. However, in CVD, since the supply of liquid Cu-Se is not as active as in the co-evaporation method, the nanoocrystalline layer containing a large amount of Ga remained independently in the absorption layer, which acted as a cause of the loss of J_SC and FF. Therefore, by using a precursor structure in which CuGa is sputter-deposited on a single layer of InSe deposited by CVD, performance parameters of V_OC, J_SC, and FF could be greatly improved.

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3617-3622
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• 2010

The reaction of stoichiometric amount of $FeCl_2{\cdot}4H_2O$, (2-pyridylmethyl, 3-pyridylmethyl)amine (2,3-pyma) and sodium azide/sodium thiocyanate in methanol under aerobic conditions affords the dinuclear Fe(III) complexes, [(2,3-pyma) $(N_3)_2Fe({\mu}-OCH_3)_2Fe(N_3)_2$(2,3-pyma)]${\cdot}CH_3OH$ (1) and [(2,3-pyma)$(NCS)_2Fe({\mu}-OCH_3)_2Fe(NCS)_2$(2,3-pyma)] (2) in good yield. Two bis-methoxy-bridged diiron(III) complexes are isolated and characterized. The coordination geometries around iron(III) ions in 1 and 2 are the same tetragonally distorted octahedron. The iron(III) ions are coordinated by two nitrogens of a 2,3-pyma, two nitrogens of two azide/thiocyanate ions, and two oxygens of two methoxy groups. Both compounds are isomorphous. The structures of 1 and 2 display the C-$H{\cdots}\pi$ and/or $\pi-\pi$ stacking interactions as well as hydrogen bonding interactions, respectively. Compounds 1 and 2 show significant antiferromagnetic couplings through the bridged methoxy groups between the iron(III) ions in the temperature range from 5 to 300 K ($H=-2JS_1{\cdot}S_2$, J=-19.1 and $-13.9\;cm^{-1}$ for 1 and 2).

• Composites Research
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• 제36권5호
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• pp.303-309
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• 2023

본 논문에서는 압축 하중을 받는 오픈 홀(open-hole compression) 탄소섬유 복합재(carbon fiber reinforced plastic, CFRP) 시편의 평면 내 손상(in-plane damage) 및 층간 분리(delamination)를 예측하기 위한 모델링 방법을 제안하고 유한요소해석(finite element analysis)을 수행하였다. 유한요소모델은 오픈 홀 복합재 시편의 점진적 손상 및 파손 분석(progressive damage and failure analysis)을 위해 Hashin 파손 기준(hashin failure criteria)과 표면 기반 응집 거동(cohesive behavior) 모델을 기반으로 구성되었으며 ABAQUS/EXPLICIT Solver를 활용하여 해석을 수행하였다. 유한요소해석의 타당성을 종합적으로 평가하기 위해 세 가지 유형의 적층 패턴(stacking sequences)을 가지는 오픈 홀 압축 복합재 시편에 대한 시험 결과와 비교하였다. 오픈 홀 압축 시편의 강도와 강성은 백분율 오차(percentage error) 10.0 % 미만으로 비교적 잘 예측하였으며 오픈 홀 복합재 적층판의 인장/압축 매트릭스 손상 상태 및 원공(hole) 근처의 복합재 계면 층간 분리에 대한 손상 상태를 추출하여 평가하고 분석하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• 한국지리정보학회지
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• 제19권2호
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• pp.98-106
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• 2016

원격탐사는 관찰하고자 하는 지역을 직접 방문하지 않고, 영상만으로도 적은 비용으로 짧은 시간 안에 대상지역을 연구하는데 있어 효율적인 기술이다. 본 연구에서는 가장 최근에 발사된 Landsat-8 OLI(Operational Land Imager) 영상을 이용하여 하천유역의 토지피복분류 정확도를 개선하는 방법을 제안하였다. 제안된 방법 중 첫 번째로 Landsat-8 OLI 영상을 이용하여 정규식생지수인 NDVI(Normalized Difference Vegetation Index)와 정규수분지수 NDWI(Normalized Difference Water Index)를 생성하였다. 두 번째로 원래의 영상에 생성된 NDVI와 NDWI 2개의 밴드를 Layer-Stacking하여 새로운 영상을 만들었다. 마지막으로 기존의 영상과 밴드조합을 적용한 새로운 영상에 각각 MLC(Maximum Likelihood Classification), SVM(Support Vector Machine)의 감독분류를 적용하였다. 하천피복분류를 할 때 정확도를 개선하는데 있어 그 의미가 있으며, 분류결과 MLC 분류방법을 적용하였을 때 약 8% 이상, SVM 분류방법을 적용하였을 때 약 1.6% 정도 개선되었다. 향후 다양한 영상과 밴드조합을 통한 연구가 이루어진다면 보다 나은 의사결정에 도움이 될 것으로 사료된다.

• 한국토양비료학회지
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• 제33권5호
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• pp.361-368
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• 2000

가축분 퇴비제조시 악취발생을 저감하고 부숙을 촉진시킬수 있는 인공제올라이트의 적정 첨가량을 구명하고자 폭 6m, 길이 70m, 높이 1.5m인 퇴비제조장에서 에스컬레이터식 교반기로 원료 대비 인공제올라이트를 0, 0.5, 1, 3, 5% (V/V)첨가 후 1일 1.2m씩 전진하면서 1차발효 과정중 온도, 수분함량, 단위 시간당 가스발생 농도, 그리고 비료성분함량의 변화를 분석한 결과는 다음과 같다. 가축분 퇴비원료에 인공제올라이트를 첨가하면 무처리 대비 최고온도가 $2{\sim}11^{\circ}C$높았고 후기에도 온도상승효과가 있었으며, 퇴비더미중 함수율도 낮아졌다. 퇴비더미에서 발생되는 암모니아 가스 농도는 퇴비화 개시6일째 최고치를 나타내고 이후 점차 낮아졌으며, 메탄가스는 퇴적 초기에 발생이 많다가 이후 점차 낮아졌다. 인공제올라이트 첨가량이 많을수록 퇴비더미에서 발생되는 암모니아와 메탄가스 발생량이 적었다. 인공제올라이트 처리로 퇴비중 질소함량은 증가되고 유기물 함량은 낮아져 유기물 대비 질소함량비가 30이하로 낮아지는 소요일수가 무처리 대비 7일 이상 단축되었다.

• 지구물리와물리탐사
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• 제17권2호
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• pp.66-73
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• 2014

뉴질랜드 White Island에 설치된 WIZ 지진관측소 하부의 S파 속도구조($v_s$)를 규명하기 위해, 2007년 4월 20일에서 2013년 9월 6일 동안 기록된 362개 원거리 지진자료(Mw > 5.5)에 수신함수 역산과 H-${\kappa}$ 중합법을 적용하였다. 200회 반복 연산 후 오차 20% 이내인 수신함수 71개를 이용하여, 관측소 반경 15 km 이내에서 $v_s$ = 4.35 km/s인 모호면의 깊이를 $24{\pm}1km$로 결정하였다. 수신함수 역산으로 구한 1차원 $v_s$ 모델은 깊이 18 ~ 22 km인 하부지각 내에 4 km 두께의 저속도층 존재를 지시한다. 이 저속도층에서의 $v_s$는 상하부층보다 0.15 km/s 작아 심부 마그마 저장소와 관련이 있을 것으로 해석된다. H-${\kappa}$ 중합법으로 구한 지각의 평균 두께는 24.5 km로 수신함수 역산 결과와 잘 일치하며, $v_p/v_s$가 1.64로 작게 나타난 것은 가스로 채워진 암석이나 뜨거운 결정질 마그마의 영향일 가능성이 있다.

• Structural Engineering and Mechanics
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• 제75권3호
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• pp.357-367
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• 2020

The objective of this article is investigation of dynamic response of thick multilayer functionally graded (FG) beam under generalized dynamic forces. The plane stress problem is exploited to describe the constitutive equation of thick FG beam to get realistic and accurate response. Applied dynamic forces are assumed to be sinusoidal harmonic, sinusoidal pulse or triangle in time domain and point load. Equations of motion of deep FG beam are derived based on the Hamilton principle from kinematic relations and constitutive equations of plane stress problem. The numerical finite element procedure is adopted to discretize the space domain of structure and transform partial differential equations of motion to ordinary differential equations in time domain. Numerical time integration method is used to solve the system of equations in time domain and find the time responses. Numerical parametric studies are performed to illustrate effects of force type, graduation parameter, geometrical and stacking sequence of layers on the time response of deep multilayer FG beams.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.324-325
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• 2006

In order to develop high efficiency white organic light-emitting diodes (OLEDs), OLED devices consisted of red and blue emitting layers (EMLs) were fabricated and the effect of respective layer thickness and the order of layer stacking on the luminous efficiency was evaluated Red/blue structure showed higher efficiency than blue/red, due to the higher exiton formation. In the blue layer of red/blue structure. However, the efficiency of the red/blue significantly depended on the thickness of the red layer, whereas the thickness of the blue layer was not affect so much. The optimum thickness of the red layer was 20 ${\AA}$, where the luminous and power efficiencies were 155 cd/A and 10.51 lm/W at 1000~3000$cd/m^2$ respectively and the maximum luminance was about 80,000 $cd/m^2$.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.1080-1083
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• 1997

Micro-stereolithography is a newly proposed technology as a means that can fabricate 3D micro-structures of free form. It makes a 3D structure by dividing the shape into many slices of relevant thickness along honzontal surfaces, hardening each layer of slice with a laser, and stacking them up to a des~red shape. Scale effect becomes important in this micro-fabrication process, d~fferently from the conventional stereolithography. To realize this micro-stereolithography technology, we developed an equipment using Ar+ laser, xyz stages, controllers and all the optic devices. Using the equipment, a number of micro-structures were successfully fabricated including a winecup of several tens of micrometers.