• Journal of the Korean Society for Heat Treatment
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• v.11 no.1
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• pp.35-45
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• 1998

The effects of alloying elements and the conditions of reverse transformation studied treatment on the formation of retained austenite in 0.15C-6%Mn-(Ti, Nb) steels has been studied. The addition of Ti and Nb to 0.15C-6%Mn steel shows no effect on the formation of retained austenite. In case of reverse transformation treatment at various temperatures, the shape of retained austenite was lath type, growing toward the longitudinal and thickness direction with increasing the heat treatment temperatures. The retained austenite formed by the reverse transformation treatment at higher temperature has a lot of stacking faults induced by the internal stress. The retained austenite was stabilized chemically by enrichment of C and Mn in the vicinity of a untransformed austenite and the chemical stability of retained austenite was decreased with increasing the heat treatment temperature and the holding time. It was effective to heat treat at $650^{\circ}C$ in order to obtain over 30vol.% of retained austenite, but more desirable to heat treat at $625^{\circ}C$ for a long time, considering the amount and quality of retained austenite.

• Korean Journal of Materials Research
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• v.14 no.6
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• pp.413-419
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• 2004

Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.2
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• pp.47-53
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• 1984

Breakdown characteristics, specifically, soft breakdown phenomena of the PN junction isolation were studied in terms of their dependence on the mask misaliglment and the amount of process-related defects. Varying the distance between the buried layer and the isolation by intentional misalignment of the isolation masts had no effects on the soft breakdown phenomena except for the change of the breakdown voltage. The soft breakdown phenomena, as characterized as a state of excessive reverse current below the breakdown voltage, were found out to result mainly from the oxidation-induced stacking faults (OSF) introduced during the fabrication process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.11-18
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• 1996

Grown-in defects like OISF and FPD in the large diameter(> 8 inch)of silicon crystal are characterized. It was revealed that the presence of the ring-patterned OISF would deterorate the minority life time of the silicon crystal. Through the cooling experiment from the $1250^{\circ}C$, the nucleation of the OISF was confirmed to follow the homogeneous nucleation and growth process. In addition to OISF nucleus, crystal originated particle, which was known to be closely related with FPD (Flow Pattern Defects), was found to depend on the pulling rate of the crystal. Combination of the lower rate of the pulling and the faster cooling near the $950^{\circ}C$ is proposed to be effective method in reducing the generation of these grown-in defects.

• Korean Journal of Metals and Materials
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• v.50 no.11
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• pp.793-800
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• 2012

The effect of cold rolling on the microstructural evolution in 22Cr-0.2N micro-duplex stainless steel was investigated. The 22Cr-xNi-yMn-0.2N duplex stainless steel plates with various Ni and Mn contents were fabricated. The steels were vacuum induction melted and hot rolled, followed by annealing treatment at the temperature range of $1000-1100^{\circ}C$, in which both the austenite and ferrite phases were stable. The volume fraction of the ferrite phase depending on the alloy compositions of Ni and Mn increased with an increase in the annealing temperature. Grain growth in the ferrite phase occurred markedly after cold rolling followed by annealing, while fine recrystallised grains were still found in the austenite phase. A large number of martensite laths was found in the microstructure of cold rolled steels, which should be formed by strain-induced martensite from the austenite phase. The intersections of stacking faults were revealed by TEM observation. The volume fraction of the martensite phase increased with an increase of the reduction ratio by cold rolling.

• Composites Research
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• v.22 no.3
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• pp.9-17
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• 2009

Nanoindentation behaviours on the films of softer Ag film/harder Cu substrate structure were studied by the molecular dynamics method. As a result, it was shown that the stiffness and hardness of films were strongly dependent on the thickness of films. The stiffness and hardness increased with the thickness of film within a critical range as an inverse Hall-Petch relation. The stiffness and hardness of Cu substrate with Ag film less than 5 nm were observed to be lower than those of bulk silver. In particular, the flower-like dislocation loop was created on the interface by the interaction between dislocation pile-up and misfit dislocation during the indentation of Ag film/Cu substrate with film thickness less than 4 nm, which seemed to be associated with the drop of load in the indentation load versus displacement curve.

• Journal of the Korean Geophysical Society
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• v.2 no.1
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• pp.39-44
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• 1999

High-resolution images are drawn from existing seismic data which were originally obtained by Korea Ocean Research & Development Institute (KORDI) during 1994-1997 for deep seismic studies on the East Sea of Korea. These images are analyzed for mapping Quaternary faults and near-bottom gas pockets. First 12 channels are selected from shot gathers for reprocessing. The processing sequence adopted for high-resolution seismic images comprises data copy, trace editing, true amplitude recovery, common-midpoint sorting, initial muting, prestack deconvolution, bandpass filtering, stacking, highpass filtering, poststack deconvolution, f-x migration, and automatic gain control (AGC). Among these processing steps, predictive deconvolution, highpass filtering, and short window AGC are the most significant in enhancement of resolution. More than 200 Quaternanry faults are interpreted on the migrated sections in the shallow depths beneath the seafloor. Although numerous faults are found mostly at the western continental slope and boundaries of the Ulleung Basin, significant amount of the faults are also indicated within the basin. Many of these faults are believed to be formed with reactivation of basement, from geotectonic activities including volcanism, and often originated in Tertiary, indicating that the tectonic regime of the East Sea might be unstable. Existence of shallow gas pockets casts real hazardous warnings to deep-sea drillings and/or to underwater constructions such as inter-island cables and gas pipelines. On the other hand, discovery of these gas pockets heightens the interests in developing natural resources in the East Sea. Reprocessed seismic sections, however, show no typical seismic characteristics for gas hydrates such as bottom-simulating reflectors in the western continental slope and ocean floor.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.22-26
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• 2001

Microstructures of AlN thin films on Si substrates grown by plasma assisted molecular beam epitaxy were analyzed with various growth temperatures and substrate orientations. Reflection high energy electron diffraction (RHEED) patterns were checked for the in-situ monitoring of the growth condition. X-ray diffraction(XRD), double crystal X-ray diffraction (DCXD), and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films after growth. On Si(100) sub-strates, AlN thin films were grown mostly along the hexagonal c-axis orientation at temperature higher than $850^{\circ}C$. On the other hand the AlN films on Si(111) were epitaxially grown with directional coherencies in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112). The microstructure of AlN thin films on Si(111) substrates, with a full width at half maximum of almost 3000 arcsec at 2$\theta$=$36.2^{\circ}$, showed that the single crystal films were grown, even if they includ a lot of crystal defects such as dislocations and stacking faults.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.713-719
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• 2000

In order to Prepare the$Ge_xSi_{1-x}/Si$(111) heterosructure by solid phase epitaxy (SPE), about 1000A of Au and about 1000A Ge were sequentially deposited on the Si(111) substrate. The resulting Ge/Au/Si(111) samples were isochronically annealed in the high vacuum condition. The behaviors of Au and Ge during thermal annealing and the structural Properties of $Ge_xSi_{1-x}$ films were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high resolution transmission electron microscopy (TEM). The a-Ge/Au/Si(111) structure was converted to the Au/GeSi/Si(111) structure. Defects such as stacking faults, point defects and dislocations were found at the GeXSil-X(111) interface, but the film was grown epitaxially with the matching face relationship of $Ge_xSi_{1-x}/$(111)/Si(111). Twin crystals were also found in the $Ge_xSi_{1-x}/$(111) matrix.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.106.1-106.1
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• 2011

The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.