• Journal of the Korean institute of surface engineering
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• v.31 no.5
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• pp.297-303
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• 1998

The influences of vanadium addition on the cavitation erosion resistance pf Fe-Cr-Ni-Si-C hardfacing alloy were investigated using a vibratory apparatus up to 30 hrs. It was shown that 1wt.%V additioned alloy improved the resistance to cavitation damage. However, further increase in V content up to 2wt.% reduced the cavitation erosion resistance. It was considered that the addition of V developed the cavitation erosion resistance by reducing the stacking fault energy of Fe-Cr-Ni-Si-C alloy. However, the further increase in V content seemed to reduce the cavitation erosion resistance by increasing the matrix/carbide interfacial area, which was the preferential sites of the cavitation damage.

• Journal of Magnetics
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• v.5 no.4
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• pp.143-146
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• 2000

In this study, the magnetic properties of CoCrPt films (far longditudinal recording) on a novel VMn underlayer were measured and compared with similar films on conventional Cr underlayers. It was found that the VMn film had (200) preferred orientation and the lattice constant was about 0.2967 nm, which is slightly larger than that of the Cr film, 0.2888 m. The grain size of the VMn film was 9.8 nm at 30 m thickness, about 39% smaller than that of a similarly deposited Cr. The CoCrPt/VMn films showed higher coercivity in comparison with the CoCrPt/Cr films. The coercivity increase is attributed to the increased Co (11.0) texture, improved lattice matching between Co (11.0) and VMn (200), and lower stacking fault density. V or Mn must have diffused into the CoCrPt magnetic layer uniformly rather than preferentially along grain boundaries. This reduced Ms at higher substrate temperature.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.352-362
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• 2000

In this study, effects of novel VMn underlayer on magnetic properties of CoCrPt/VMn longitudinal medium was studied and compared with those of CoCrPt/Cr medium. It was found that the VMn film had (200) preferred orientation and the lattice constant was about 0.2967 nm, which is slightly larger than that of the Cr, 0.2888 nm. The grain size of VMn film was 9.3 nm at 30 nm thickness, and this is about 38 % smaller than that of a similarly deposited Cr film. The CoCrPt/VMn films showed higher coercivity in comparison with the CoCrPt/Cr films. The coercivity increase seems to be attributed to the increased Co (11.0) texture, improved lattice matching between Co (11.0) and VMn (200), and lower stacking fault density. Mn must have diffused into the CoCrPt magnetic layer more uniformly rather than preferentially along grain boundaries this reduced Ms at higher substrate temperature

• Transactions of the Korean Society of Automotive Engineers
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• v.13 no.2
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• pp.83-92
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• 2005

An electromagnetic acoustic transducer (EMAT) is a unique probe that does not require a couplant or gel and also can usually generate or detect an ultrasonic wave into specimens across a small gap. It, therefore can be applied in a noncontact mode with a high degree of reproducibility. Especially stiffness of composites depends on layup sequence of CFRP(carbon fiber reinforced plastics) laminates. It is very important to evaluate the layup errors in prepreg laminates. A nondestructive technique can therefore serve as a useful measurement for detecting layup errors. This shear wave for detecting the presence of the errors is very sensitive. A decomposition model has been used in the interpretation and prediction of test results. Test results have been com pared with model data. It is found that the high probability shows between tests and the model utilized in characterizing cured layups of the laminates. Also a C-scan method was used for detecting layup of the laminates because of extracting fiber orientation information from the ultrasonic reflection caused by structural imperfections in the laminates. Therefore, it was found that interface C-scan images show the fiber orientation information by using two-dimensional fast Fourier transform (2-D FFT).

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.230-236
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• 1993

We have the homoepitaxiallayers on the surfaces of Si(111) with and without the adsorbed surfactants, for example, Ag or Sn. In this paper, We have studied the difference of growth for these two cases by the observation of intensity oscillations of RHEED specular spots during the growing processes. In the case of growth without the adsorbed surfactants, the Si atoms fill first the stacking fault layer of Si(111) 7 ${\times}$7 structure. Therefore, the irregular oscillations are observed in the early stage of growing process. However, in the case of growth with the adsorbed surfactants, the surfactants already have the ${\sqrt}{3}$ ${\times}$ ${\sqrt}{3}$ structures on the surfaces of Si(111) at the adjucate temperatures of 300`$600^{\circ}C$ and 190~$860^{\circ}C$ for the surfactants of Ag and Sn, respectively. We also find that the number of oscillations is a little larger for the case of growth with the adsorbed surfactants. The reason for this is that for the case of growth with the adsorbed surfactants, the activation energies of Si atoms decrease due to the segregation of surfactants toward the growing surfaces.

• Journal of Korea Foundry Society
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• v.41 no.6
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• pp.505-515
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• 2021

Creep properties of directionally solidified Ni-based superalloy CM247LC under various temperature and stress conditions have been investigated. In the heat-treated specimen, some portion of eutectic γ-γ' remained, and uniform cubic γ' was observed in the dendrites. At low temperature (750℃) and high stress condition, a large amount of deformation occurred during the primary creep, while the tertiary creep region accounted for most of the creep deformation under high temperature and low stress condition. γ' particles are sheared by dislocation dissociated into super lattice partial dislocations separated by stacking faults at 750℃. No stacking faults in γ' were found at and above 850℃ due to the temperature dependence of the stacking fault energy. Raft structure of γ' was found after creep test at high temperature of 950℃ and 1000℃. At 850℃, the deformation mechanism was shown to be dependent on the stress condition, and so rafting was observed only under low stress condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.157-161
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• 1999

We investigated the effect of mechanical back side damage in Czochralski silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductance decay ($\mu$-PCD) technique, wet oxidation/preferential etching methods, near surface micro defect (NSMD) analysis, and X-ray section topography. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and NSMD density increased proportionally, also correlated to the oxidation induced stacking fault (OISF) density. Thus, NSMD technique can be used separately from conventional etching method in OISF measurement.

• Composites Research
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• v.24 no.2
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• pp.9-13
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• 2011

,In this paper, the symmetric axis parameter method, which was proposed to identify defects, dislocations and stacking fault, with perfect structures in the zinc-blende materials, was introduced as a way to distinguish between elastic and plastic deformation. LAMMPS, a molecular dynamics programme of Sandia National Laboratories, was used to perform nanoindentation simulation on silicon, a zinc-blende material. Defects in silicon (111) under spherical indentation showed the threefold pattern and the slip system in the form of ring crack. Also simulation results show good agreement with experimental results and existing theoretical analyses.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.10a
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• pp.254-257
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• 2004

An electromagnetic acoustic transducers (EMAT) can usually generate or detect an ultrasonic wave into specimens across a small gap. Especially stiffness of composites depends on layup sequence of CFRP(carbon fiber reinforced plastics) laminates because the layup of composite laminates influences there properties. It is very important to evaluate the layup errors in prepreg laminates. A nondestructive technique can therefore serve as a useful measurement for detecting layup errors. It was shown experimentally that this shear waves for detecting the presence of the errors is very sensitive. It is found that high probability shows between tests and the model developed in characterizing cured layups of the laminates. Also a C-scan method was used for detecting layup of the laminates because of extracting fiber orientation information from the ultrasonic reflection caused by structural imperfections in the laminates. Therefore, it was found that interface C-scan images show the fiber orientation information by using two-dimensional fast Fourier transform(2-D FFT).