• Journal of the Korean Society for Heat Treatment
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• v.22 no.5
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• pp.275-281
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• 2009

The microstructure of copper films prepared by a sputtering apparatus, which was fabricated to enhance the shadowing effect, was investigated by scanning electron microscopy. Black copper films were deposited on copper wires at an Ar pressure of 10 Pa. The black films had an extremely porous structure composed of separated columns. This structure is quite similar to that of black titanium films prepared by cylindrical magnetron sputtering. These results suggest that the porous structure composed of separated columns is easily formed for metal films by enhancing the shadowing effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.307-311
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• 2017

ZnO:Al thin films were deposited on glass substrate by RF magnetron sputtering followed by in situ heat treatment in the same chamber. Effects of in situ heat treatment on properties of ZnO:Al thin films were investigated in this study. As heat treatment temperature was increased, crystal quality was improved first and then it was deteriorated, surface roughness was decreased, and sheet resistance was also decreased. The decrease in sheet resistance was caused by increasing carrier concentration due to decreased surface roughness. The decrease in surface roughness resulted in increase of transmittance. Therefore, in situ heat treatment is an effective method for obtaining films with better electrical characteristics.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.301-306
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• 2007

AlN thin film for SAW filter application was deposited on (100) silicon wafers by reactive magnetron sputtering method. The structural characteristics were dependent on the deposition conditions such as sputtering pressure, RF power, substrate temperature, and nitrogen partial pressure. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD), Electron Probe MicroAnalyzer (EPMA) and Atomic Force Microscope (AFM) have been used to find out structural properties and preferred orientation of AlN thin films. Insertion loss of SAW devices was 28.51 dB and out of band rejection was about 24 dB.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.242-244
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• 2015

ZnO:Ga thin films were deposited by RF magnetron sputtering technique from ZnO (3 wt.% $Ga_2O_3$) target onto glass substrates under various RF power. The influence of RF power on the structural, electrical, and optical properties of ZnO:Ga thin films was investigated by X-ray diffraction, atomic force microscopy, Hall method and optical transmission spectroscopy. As the RF power increases from 50 to 110W, the crystallinity is deteriorated, the root main square surface roughness is decreased and the sheet resistance is increased. The increase of sheet resistance is caused by decreasing carrier concentration due to interstitial Ga ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a red-shift with increasing RF power.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.161-168
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• 2014

A real-time monitoring of immersed antenna type inductively coupled plasma (ICP) was done with a homemade 2 dimensional voltage probe array to check the uniformity of the plasma. Measured voltage values with a high impedance voltmeter are close to the floating potential of the plasma. As the substrate carrier was moving into a magnetron sputtering plasma diffusive from a $125mm{\times}625mm$ size cathode, measured results showed reliably separation of plasma into the upper and lower empty space over the carrier. Infra red thermal imaging camera was used to observe the cross corner effect in situ without eroding a target to the end of the usage. 3 dimensional particle trace model was used to analyze the magnetron discharge's behavior.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.218-218
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• 2011

The CIGS Solar Cells have the highest conversion efficiency in the film-type solar cells. They consist of p-type CuInSe2 film and n-type ZnO film. The CdS films are used as buffer layer in the CIGS solar cells since remarkable difference in the lattice constant and energy band gap of two films. The CdS films are toxic and make harmful circumstances. The CdS films deposition process need wet process. In this works, we design and make the hitter and lamp reflection part in the sputtering system for the ZnS films deposition as buffer layer, not using wet process. Film thickness, SEM, and AFM are measured for the uniformity valuation of the ZnS films. We conclude the optimum deposition temperature for the films uniformity less than 1.6%. The ZnS films deposited by the sputtering system are more dense and uniform than the CdS films deposited by the Chemical Bath Deposition Method(CBD) for the CIGS Solar Cells.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.71-75
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• 2006

ITO (Indium Tin Oxide) thin films have been fabricated by rf magnetron sputtering with a target of a mixture $In_{2}O_{3]$(90 wt%) and $SnO_{2}$ (10 wt%). ITO films were sputtered with substrate temperature from 30 to $300^{\circ}C$ and working pressure from 1 to under 0.1 m Torr. ITO thin films surface morphology and electrical properties analyzed by SEM Photographs, and X-ray diffractions patterns. The resistivity of ITO thin films was $1.8{\times}10^{-5}{\Omega}/cm$.

• Corrosion Science and Technology
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• v.5 no.1
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• pp.15-22
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• 2006

The introduction of two-grid inside a conventional process system produces a reactive coating deposition and increases metal ion ratio in the plasma, resulting in denser and smoother films. The corrosion behaviors of TiN coatings were investigated by electrochemical methods, such as potentiodynamic polarization test and electrochemical impedance spectroscopy (EIS) in deaerated 3.5% NaCl solution. Electrochemical tests were used to evaluate the effect of microstructure on the corrosion behavior of TiN coatings exposed to a corrosive environment. The crystal structure of the coatings was examined by X-ray diffractometry (XRD) and the microstructure of the coatings was investigated by scanning electron microscopy (SEM) and transmission electron spectroscopy (TEM). In the potentiodynamic polarization test and EIS measurement, the corrosion current density of TiN deposited by two grid-attached magnetron sputtering was lower than TiN deposited by conventional magnetron type and also presented higher Rct values during 240 h immersion time. It is attributed to the formation of a dense microstructure, which promotes the compactness of coatings and yields lower porosity.

• Journal of Surface Science and Engineering
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• v.39 no.2
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• pp.70-75
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• 2006

As technology advances, there is a demand for development of hard, solid lubricant coating. (Ti,Cr)N-$MoS_2$, films were deposited on SKD 11 tool steel substrate by co-deposition of $MoS_2$, with (Ti,Cr)N using a D.C. magnetron sputtering process. The influence of the $N_2/Ar$ gas ratio, the deposition temperature, the amount of $MoS_2$ in the films, and the bias voltage on the mechanical and the structural properties of the films were investigated. Wear tests were performed on the films deposited in various conditions.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.145-150
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• 2014

MgO thin films were deposited by internal ICP-assisted reactive-magnetron sputtering with bipolar pulse bias on a substrate to suppress random arcs. Mg is reactively sputtered by a bipolar pulsed DC power of 100 kHz into ICP generated by a dielectrically shielded internal antenna. At a mass flow ratio of $Ar/O_2$ = 10 : 2 and an ICP/sputter power ratio of 1 : 1, optimal film properties were obtained (a powder-like crystal orientation distribution and a RMS surface roughness of approximately 0.42 nm). A bipolar pulse substrate bias at a proper frequency (~a few kHz) prevented random arc events. The crystalline preferred orientations varied between the (111), (200) and (220) orientations. By optimizing the plasma conditions, films having similar bulk crystallinity characteristics (JCPDS data) were successfully obtained.