• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.59.2-59.2
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• 2015

Modification of film structure and properties in inductively-coupled plasma (ICP) assisted dc and pulsed dc sputtering has been reported by Oya and Kusano [1] and by Sakamoto, Kusano, and Matsuda [2], showing drastic changes in films structure and properties by the ICP assistance in particular to the pulsed dc discharge. Although mechanisms involved in the modification has been reported to be the increase in energy transferred to the substrate, details of effects of low-energy ion bombardment on the modification and origin of an anomalous increase in the ion quantity by the ICP assistance to the pulsed dc discharge have not been discussed. In this presentation, mechanisms involved in film structure and property modification in ICP assisted dc and pulsed dc sputtering, in which a number of low-energy ions are formed, will be discussed based on ion energy distribution as well as effectiveness of energy transfer to the substrate by low energy particles [3]. The results discussed in this presentation will emphasize the fact that the energetic particles playing an important role in the film structure modification are those to be deposited, but not those of inert gas, when their energies range in less than 100 eV in the pressure range of magnetron sputtering.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.27-32
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• 2004

High temperature superconducting coated conductor has a structure of /< superconducting layer>//. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is CeO$_2$(cap layer)/YSZ(diffusion barrier layer)/CeO$_2$(seed layer). Evaporation technique is used for the CeO$_2$ layer and DC reactive sputtering technique is used for the YSZ layer, A chamber was set up specially for DC reactive sputtering, Detailed features are as following. A separator divided the chamber into two halves a sputtering chamber and a reaction chamber. The argon gas for sputtering target elements flows out of the cap of sputtering gun, and water vapor for reaction with depositing species spouts near the substrate. Turbo pump is connected with reaction chamber. High speed deposition of YSZ film could be achieved in the chamber. Detailed deposition conditions (temperature and partial pressure of reaction gas) were investigated for the rapid growth of high quality YSZ film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.966-972
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• 2010

Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.11-16
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• 2001

CuNi alloy films are deposited by co-sputtering of dual targets (Cu and Ni, respectively). Effects of the co-sputtering conditions, such as powers applied to the targets, deposition pressures, and substrate temperatures, on the structural and electrical properties of deposited films are systematically investigated. The composition ratio of Ni/Cu is almost linearly decreased by increasing the DC power applied to the Cu target from 25.6 W to 69.7 W with the RF power applied to the Ni target unchanged(140 W). it is noted that the chamber pressure during deposition and the film thickness give rise to a change of the Ni/Cu ratio within the films deposited. The former may be due to a higher sputtering yield of Cu atom and the latter due to the re-sputtering phenomenon of Cu atoms on the surface of deposited film. The film deposited at higher pressures or at lower substrate temperatures have a smaller crystallite size, a higher electrical resistivity, and much more voids. This may be attributed to a lower surface mobility of sputtered atoms over the substrate.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.361-366
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• 1999

The life of AC PDP depends largely on the sputtering-resistant property of the protecting layer such as MgO thin-film. However, it is very difficult to measure the sputtering-resistant property in the stable driving conditions of AC PDP. In this paper we have suggested a high speed measurement technique of the sputtering-resistant property of MgO thin-film by applying the MgO thin-film as the target of RF magnetron sputtering system. We have also applied this method to the e-beam MgO and sputter-MgO and e-beam MgO superior to sputter-MgO 3 times over. Also, the relation of Xe gas partial pressure(X) and sputtered thickness(Y) was Y=3.4X+13.5.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.674-677
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• 2011

The dependency of sputtering power on the electrical performances in amorphous HIZO-TFT (hafnium-indium-zinc-oxide thin film transistors) has been investigated. The HIZO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different sputtering power at room temperature. TOF-SIMS (time of flight secondary ion mass spectrometry) was performed to confirm doping of hafnium atom in IZO film. The field effect mobility (${\mu}FE$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing sputtering power. This result can be attributed to the high energy particles knocking-out oxygen atoms. As a result, oxygen vacancies generated in HIZO channel layer with increasing sputtering power resulted in negative shift in Vth and increase in on-current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.880-883
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• 2003

ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on $AZO/SiO_2/Si$ substrates with oxygen gas flow rate, and the other sputtering conditions were fixed such as a sputtering current of 0.8A, a substrate temperature at room temperature. AZO bottom electrode were deposited on $SiO_2/Si$ substrate and by Zn:Al(Al:2wt%) metal target. ZnO thin film thickness and the c-axis preferred orientation of ZnO thin film were evaluated by ${\alpha}-step$ and XRD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.229-230
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• 2008

We have studied the structural and optical properties of ZnO thin film deposited on glass by RF magnetron sputtering as functions of working pressures. The grain sizes were decreased as the working pressures were increased. The average optical transmissions over all exceeded 80% for ZnO films deposited in 20, 25 and 300m torr working pressures. And the transmission spectra patterns were almost same. While the transmission spectra pattern of ZnO film deposited in 35nm torr was different with other spectra patterns obtained in 20, 25 and 30nm torr working pressures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.509-512
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• 2001

Aluminum nitride(AlN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AlN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, $200^{\circ}C$ of substrate temperature and 15 mTorr of working pressure. The leakage current density was less then $1.3{\times}10^{-7}A/cm^{2}$. And it was also investigated the etching properties of deposited AlN thin films for application.

• Corrosion Science and Technology
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• v.3 no.4
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• pp.148-153
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• 2004

Magnesium thin flims were prepared on cold-rolled steel substrates by RF magnetron sputtering technique. The influence of argon gas pressure and substrate bias voltage on their crystal orientation and morphology of the coated films were investigated by scanning electron microscopy (SEM) and X-ray diffraction, respectively. And the effect of crystal orientation and morphology of magnesium films on corrosion behaviors was estimated by measuring anodic polarization curves in deaerated 3%NaCl solution. From the experimental results, all the sputtered magnesium films showed obviously good corrosion resistance to compare with 99.99% magnesium target of the sputter-evaporation metal. Finally it was shown that the Corrosion-resistance of magnesium films can be improved greatly by controlling the crystal orientation and morphology with effective use of the plasma sputtering technique.