• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.114-117
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• 2020

In this study, we performed the deposition of Al thin film using a DC magnetron sputtering method. To evaluate electrical and structural properties, the growth conditions were changed in terms of two functions, namely, sputtering power ranging from 41.6 to 216 W and film growth rate ranging from 5.35 to 26.39 nm/min. The growth rate and the microstructure were characterized by a scanning electron microscopy and X-ray diffraction analysis. The plane of crystalline growth showed that the preferential (111) direction and defects due to the grain boundary increased with DC power. The resistivity of the Al film over 50 nm showed a constant value by horizontal grain growth. Our results can be applicable for the preparation of nano-templates for anodic aluminum oxide.

• Korean Journal of Metals and Materials
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• v.47 no.6
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• pp.378-382
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• 2009

We investigated the effects of deposition conditions on the fabrication of $Fe_{3}O_{4}$ thin films using a reactive DC magnetron sputtering at room temperature. The structural, electrical, and magnetic properties of Fe oxide films dependence on the film thickness, oxygen flow rate, and the substrate crystallinity were also studied. We have successfully fabricated $Fe_{3}O_{4}$ film with thickness of about 10 nm under optimal reactive sputtering conditions. The saturation magnetization, resistivity, and Verwey transition of the $Fe_{3}O_{4}$ film were298 emu/cc, $4.0{\times}10^{-2}{\Omega}cm$, and 125 K, respectively.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.289-293
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• 2010

To investigate the corrosion behavior of tools steel surface in various coating film, the surface of hard coated Ti-Zr-N film on the tool steel by using magnetron-sputtering methods was researched using various experimental methods. STD 61 steels were manufactured by using vacuum furnace and solutionized for 1hr at $1050^{\circ}C$. Steel surface was coated with Ti-Zr-N film at $150^{\circ}C$ and 100W for 1h by using DC-sputtering equipment. Surface characteristics of Ti-Zr-N film coated specimens were investigated by OM, XRD, FE-SEM and nano-scratch tester. And corrosion behaviors of the coated specimen were investigated by polarization test and electrochemical impedance spectroscopy(EG&G Co, PARSTAT 2273. USA). It was found that Ti-Zr-N film coated sample had a thick coated layer and showed a good wear resistance and corrosion resistance of surface compared with ZrN and TiN coated sample. The corrosion resistance and mechanical property of Ti-Zr-N film coated STD 61 alloy increased as sputtering time increased.

• Corrosion Science and Technology
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• v.22 no.1
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• pp.30-35
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• 2023

Hafnium nitride (HfN) thin films were fabricated by mid-frequency magnetron sputtering (mfMS) and direct current magnetron sputtering (dcMS) and their mechanical and structural properties were compared. In particular, changes in the HfN film properties were observed by changing the pulse frequency of mfMS between 5 kHz, 15 kHz, and 30 kHz. The crystalline structure, microstructure, 3D morphology, and mechanical properties of the HfN films were compared by x-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and nanoindentation tester, respectively. HfN film deposited by mfMS showed a smoother and denser microstructure as the frequency increased, whereas the film deposited by dcMS showed a rough and sloppy microstructure. A single δ-HfN phase was observed in the HfN film made by mfMS with a pulse frequency of 30 kHz, but mixed δ-HfN and HfN_0·4 phases were observed in the HfN film made by dcMS. The mechanical properties of HfN film made by mfMS were improved compared to film made by dcMS.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.577-578
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• 2012

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.379-380
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• 2007

The characteristics of a co-sputtered indium zinc tin oxide (IZTO) films prepared by dual target dc magnetron sputtering from IZO and ITO targets at a room temperature are investigated. Film properties, such as sheet resistance, optical transmittance, surface work function and surface roughness were examined as a function of ITO dc power at constant IZO dc power of 100 W. It was shown that the increase of the ITO dc power during co-sputtering of ITO and IZO target resulted in an increase of sheet resistance of the IZTO films. This can be attributed to high resistivity of ITO film prepared at room temperature. Surface smoothness and roughness were investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The synchrotron x-ray scattering results obtained from IZTO film with different ITO contents showed that introduction of ITO atoms into amorphous IZO film resulted in a crystallization of IZTO film with (222) preferred orientation due to low alc transition temperature of ITO film. However, the transmittance of the IZTO films with thickness of 150 nm is between 80 and 85 % at wavelength of 550 nm regardless of ITO content. Possible mechanism to explain the ITO and IZO co-sputtering effect on properties of IZTO is suggested.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.49-53
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• 2022

In this study, quantum dot light-emitting diodes (QLEDs) of the optimized EL performance with a radio frequency (RF) sputtered Zn_0.85Mg_0.15O thin film as an electron transport layer (ETL). In typical QLEDs, ZnO nanoparticles (NPs) are widely used materials for ETL layer due to their advantages of high electron mobility, suitable energy level and easy capable of solution processing. However, the instability problem of solution-type ZnO NPs has not yet been resolved. To solve this problem, ZnMgO thin film doped with 15% Mg of ZnO was fabricated by RF sputtering and optimized for the device applied as an ETL. The QLEDs of optimized ZnMgO thin film exhibited a maximum luminance of 15,972 cd/m² and a current efficiency of 7.9 cd/A. Efficient QLEDs using sputtering ZnMgO thin film show the promising results for the future display technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.59.2-59.2
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• 2015

Modification of film structure and properties in inductively-coupled plasma (ICP) assisted dc and pulsed dc sputtering has been reported by Oya and Kusano [1] and by Sakamoto, Kusano, and Matsuda [2], showing drastic changes in films structure and properties by the ICP assistance in particular to the pulsed dc discharge. Although mechanisms involved in the modification has been reported to be the increase in energy transferred to the substrate, details of effects of low-energy ion bombardment on the modification and origin of an anomalous increase in the ion quantity by the ICP assistance to the pulsed dc discharge have not been discussed. In this presentation, mechanisms involved in film structure and property modification in ICP assisted dc and pulsed dc sputtering, in which a number of low-energy ions are formed, will be discussed based on ion energy distribution as well as effectiveness of energy transfer to the substrate by low energy particles [3]. The results discussed in this presentation will emphasize the fact that the energetic particles playing an important role in the film structure modification are those to be deposited, but not those of inert gas, when their energies range in less than 100 eV in the pressure range of magnetron sputtering.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.361-366
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• 1999

The life of AC PDP depends largely on the sputtering-resistant property of the protecting layer such as MgO thin-film. However, it is very difficult to measure the sputtering-resistant property in the stable driving conditions of AC PDP. In this paper we have suggested a high speed measurement technique of the sputtering-resistant property of MgO thin-film by applying the MgO thin-film as the target of RF magnetron sputtering system. We have also applied this method to the e-beam MgO and sputter-MgO and e-beam MgO superior to sputter-MgO 3 times over. Also, the relation of Xe gas partial pressure(X) and sputtered thickness(Y) was Y=3.4X+13.5.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.11
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• pp.36-43
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• 2008

In this parer aluminium-doped zinc oxide(ZnO:Al) conducting layer was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method. The effects of gas pressure and r. f. sputtering power on the structural and electrical properties of ZnO:Al thin film were investigated experimentally. Especially the effect of position of PET substrate on the electrical properties of the film was studied and fixed to improve the electrical properties and also to increase the deposition rate. The results show that the structural and electrical properties of ZnO:Al thin film were strongly influenced by the gas pressure and sputtering power. The minimum resistivity of $1.1{\times}10^{-3}[{\Omega}-cm]$ was obtained at 5[mTorr] of gas pressure, and 18D[W] of sputtering power. The deposition rate of ZnO:Al film at 5[mTorr] of gas pressure was 248[nm/min]. and is higher by around 3 times compared to that at 25[mTorr].