Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Study of Electrical and Structural Performance of Aluminum Thin Film Deposited by Sputtering Method

스퍼터링법에 의해 증착된 알루미늄 박막의 전기적·구조적 특성에 관한 연구

  • Kim, Doyoung (School of Electrical and Electronics Engineering, Ulsan College)
  • 김도영 (울산과학대학교 전기전자공학부)
  • Received : 2019.11.06
  • Accepted : 2019.12.03
  • Published : 2020.03.01
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Abstract

In this study, we performed the deposition of Al thin film using a DC magnetron sputtering method. To evaluate electrical and structural properties, the growth conditions were changed in terms of two functions, namely, sputtering power ranging from 41.6 to 216 W and film growth rate ranging from 5.35 to 26.39 nm/min. The growth rate and the microstructure were characterized by a scanning electron microscopy and X-ray diffraction analysis. The plane of crystalline growth showed that the preferential (111) direction and defects due to the grain boundary increased with DC power. The resistivity of the Al film over 50 nm showed a constant value by horizontal grain growth. Our results can be applicable for the preparation of nano-templates for anodic aluminum oxide.

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References

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