• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.901-904
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• 2000

In order to investigate the effect of deposition conditions on crystallographic properties of ZnO thin films by Facing Targets Sputtering system which can deposit thin films in plasma-free situation and change the deposition conditions in wide range. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step (Tencor) analyses. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature 300$^{\circ}C$, inter target distance 100mm. In these conditions, the rocking curve of zinc oxide thin films deposited on Glass was 3.9$^{\circ}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.179.1-179.1
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• 2013

Cylindrical Rotating Magnetron Sputtering Cathode (이하 Rotary Cathode)는 기존에 사용 되던 rectangular type 보다 Target 사용 효율이 높다는 큰 이점을 가지고 있다. 높은 Target 사용 효율은 비용 절감 효과와 직접적으로 관련 된다. 이번 연구는 3D Plasma simulation(PIC-MCC)을 통한 Target 사용 효율 80% 이상의 Rotary Cathode 개발을 목적으로 한다. Plasma simulation에 External Magnetic fields를 접목하여 Electron의 이동 궤적을 제어하였고, 생성된 Ion (Ar+)의 밀도 및 속도로 Plasma의 안정성과 Erosion 계산 구간을 선정 하였다. Target Erosion Profile은 Sputtering yield Data와 Target에 충돌한 Ion 정보를 사용하여 산출 하였으며, Sputtered Particles의 Deposition Profile은 계산된 Target Erosion Profile과 The cosine law of emission을 이용하여 계산 하였다. 실험 조건은 Plasma simulation의 초기조건 바탕으로 하여 2G size의 ITO Target을 대상으로 실험 하였다. 비 Erosion 영역 최소화하기 위해 Magnet Length를 변경하여 제작 적용 하였다. Simulation 계산 시간의 제약으로 인하여 simulation에서 생성된 최대 이온 밀도는 일반적으로 알려진 값 보다 적게 계산 되었지만, Simulation으로 예측한 Erosion Profile 및 Deposition Profile은 실험 값과 유사한 형태를 나타났으며, 실험 결과는 Target 사용 효율 80%이상의 결과를 보였다.

• 한국재료학회지
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• 제4권7호
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• pp.767-774
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• 1994

The TbFeCo thin films were prepared by the magnetron sputtering system to investigate the effect of the base pressure, film thickness and pre sputtering on the oxidation of the films by analyzing the change of matneto optical properties and by AES depth profile. The films prepared by the facing targets sputtering system represented almost constant magneto optical properties independent of the base pressure resulting from the short flight distance of the sputtered particles. Also, the thin TbFeCo films represented better perpendicular anisotropy as the films thickness increased with pre sputtering. However, it was still needed a deposition rate higher than a certain critical deposition rate to obtain a perfect perpendicular anisotropy even at a very high film thickness.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• 한국세라믹학회지
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• 제35권7호
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• pp.733-739
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• 1998

C-axis oriented zinc oxide thin films were deposited on Cornign 1737 glass substrate by an rf magnetron sputtering technique. The effects of deposition parameters and post heat-treatment on the crystallinity and electical properties of ZnO films were investigaed. As-deposited ZnO films showed the strong c-axis growth and excellent crystallinity under the deposition conditions as follows: substrate temperature 350$^{\circ}C$ ; growth and excellent crystallinity under the deposition conditions as follows ; substrate temperature 350$^{\circ}C$ rf power 75W ; gas pressure 6m Torr; percentage of oxygen 50% The higher heat-treating temperatue was the stronger c-axis growth and the better crystallinity of the deposited ZnO films were. The resistivity of ZnO films was significantly affected by deposition parameters and post heat-treatment. With increasing increased. After post heat-treating at 400$^{\circ}C$ in air the resistivity of ZnO films increased but post heat-treat-ing temperature 500$^{\circ}C$ rather diminished the film resistivity.

• 한국표면공학회지
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• 제38권4호
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• pp.150-155
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• 2005

Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{\times}10^{-4}{\Omega}{\cdot}cm$ at 750 nm thickness, $200^{\circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2172-2174
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• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.

• 한국산학기술학회논문지
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• 제12권11호
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• pp.4711-4717
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• 2011

PVD방식에 의한 TiN박막의 형성은 DC와 RF sputtering deposition 방식을 적용할 수 있지만, 플라즈마 생성을 위해 주입된 가스의 이온화율이 떨어져 박막성형 속도가 느려지며, 박막과의 접착력을 높이는 것에도 한계성을 가지고 있다. 이를 개선하기 위해 증착과 동시에 이온빔을 조사하는 이온빔 진공증착 IBAD(Ion beam assisted deposition)를 이용 하게 되면, 코팅 전에 소재 표면을 Ion beam으로 조사하기 때문에 표면cleaning의 효과가 크고, 접착력이 높은 박막을 얻을 수 있다. 또한 고 진공과 낮은 온도에서도 균일한 두께의 고순도의 박막을 얻을 수 있는 이점이 있다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1991년도 추계연구발표회 논문개요집
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• pp.86-87
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• 1991

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.966-972
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• 2010

Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.