• 제목/요약/키워드: sputtering

검색결과 5,162건 처리시간 0.036초

스퍼터링 조건이 티탄산화물박막의 전기적 착색 특성에 미치는 영향 (The Effect of Sputtering Conditions on the Electrochromic Properties of Titanium Oxide Thin Films)

  • 이길동
    • 한국태양에너지학회 논문집
    • /
    • 제26권4호
    • /
    • pp.55-61
    • /
    • 2006
  • Titanium oxide ($TiO_2$) films are deposited on the indium tin oxide (ITO) substrate in an $Ar/O_2$ atmosphere by using reactive RF (Radio Frequency) magnetron sputtering technique, and Electrochromic properties and durability of $TiO_2$ films deposited at different preparation conditions are investigated by using UV-VIS spectrophotometer and cyclic voltammetry Li+ interalation/deintercalation in $TiO_2$ films shows that the electrochromic properties and durability of as-deposited films strongly depend on gas pressure $TiO_2$ films formed in our sputtering conditions are found to remain transparent, irrespective of their Li+ ion contents. The optimum sputtering conditions for film as passive counter electrode in electrochromic devices are working pressure of $1.0\;{\times}\;10^{-2}\;torr$ and oxygen flow raes of $10{\sim}15\;sccm$, respectively.

Fabrications of Y-ZrO$_2$ buffer layers of coated conductors using dc-sputtering

  • K. C. Chung;Lee, B. S.;S. M. Lim;S. I. Bhang;D. Youm
    • 한국초전도ㆍ저온공학회논문지
    • /
    • 제5권3호
    • /
    • pp.11-14
    • /
    • 2003
  • The detailed conditions of dc-sputtering for depositions of yttria-stabilized ZrO$_2$ (YSZ) films were investigated, while the films were grown on the CeO$_2$ template layers on biaxially textured Ni-tapes. The window of oxygen pressures for proper growth of YSZ films, which was dependent on sputtering powers, was determined by sufficient oxidations of the YSZ films and the de-oxidation of the target surface, which was required for rapid sputtering. The window turned out to be fairly wide under certain values of argon pressure. When the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated YSZ films showed good texture qualities and surface morphologies.

Sputtering에 의한 polyester 직물의 박막내구성 개선을 위한 수지처리 효과 (The Effect of Resin Treatment for Improving of the Metal Thin Membrane Fastness on Polyester Fabrics by Sputtering)

  • 구강;전상민;송병갑;박영미
    • 한국염색가공학회지
    • /
    • 제18권3호
    • /
    • pp.31-41
    • /
    • 2006
  • Functional properties are available with sputtering. But sputtering treatment alone cannot got a good fastness performance to washing, rubbing and light. This research was objected to investigate optimum condition by sputtering on polyester through various processing conditions such as ion current and treatment time, and then various resin treated onto metal coated polyester fabrics in order to increase washing fastness of metal membrane. As the results, the optimum conditions revealed 1500 mA of ion current, 2 min of treatment time in sputter, and suitable resin concentrations were 2% of o.w.s (on the weight of solution) in resin treatment. Therefore, we could get enhanced anti-static effect and flex stiffness as well as washing fastness in sputtered polyester fabric with various resin treatment, for example, melamine and polyurethane.

FIB 가공 공정 특성 분석 (The analysis of sputtering characteristics using Focused Ion Beam according to Focal Length)

  • 최병열;최우천;강은구;홍원표;이석우;최헌종
    • 한국정밀공학회:학술대회논문집
    • /
    • 한국정밀공학회 2005년도 춘계학술대회 논문집
    • /
    • pp.1518-1521
    • /
    • 2005
  • The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its usage in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries This paper focus to apply the sputtering technology accumulated by experiments to 3d structure fabrication with high resolution. Therefore some verifications and discussions of the characteristics of FIB sputtering results according to focal length were described in this paper. And we suggested the definition of rectangular pattern profile and made the verifications of sputtering results based on definition of it.

  • PDF

Crystallized Indium Tin Oxide Thin Films at a Low Temperature on Polymer Substrate by Off-axis RF Magnetron Sputtering

  • 최형진;정현준;윤순길
    • 한국재료학회:학술대회논문집
    • /
    • 한국재료학회 2011년도 추계학술발표대회
    • /
    • pp.22.1-22.1
    • /
    • 2011
  • In this study, off-axis RF magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about $120^{\circ}C$ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The structural, optical and electrical properties of the obtained films depending on deposition parameters, such as sputtering power, gas flow and working pressure, have been investigated. The ITO thin films grown on PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. 100-nm thick ITO films showed a resistivity of about $4.2{\times}10^{-4}{\Omega}-cm$ and a transmittance of about 81% at a wavelength of 550nm. The transmittance of the ITO thin films by an insertion of $SiO_2$ thin films on ITO films was improved.

  • PDF

On-axis 스퍼터링과 FTS 공정으로 증착한 ZTO 박막트랜지스터의 특성 (Characterization of ZTO Thin Films Transistor Deposited by On-axis Sputtering and Facing Target Sputtering(FTS))

  • 이세희;윤순길
    • 한국재료학회지
    • /
    • 제26권12호
    • /
    • pp.676-680
    • /
    • 2016
  • We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at $400^{\circ}C$. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of $12.91cm^2/V.s$, a low swing of 0.80 V/decade, $V_{th}$ of 5.78 V, and a high $I_{on/off}$ ratio of $2.52{\times}10^6$.

MPP (Modulated Pulsed Power)와 Magnetron Sputtering을 이용한 박막의 특성 평가

  • 민관식;윤주영;신용현;차덕준;여창업;박환열;허윤성;태기관;김진태
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
    • /
    • pp.256-256
    • /
    • 2013
  • 기존에 사용되어 오던 DCMS (DC magnetron sputtering)과 HPPMS (high-power pulsed magnetron sputtering)에 비해 MPP를 이용한 magnetron sputtering은 높은 증착률을 가지고 있으며, 증착된 박막의 특성도 우수하다고 알려져 있다. 본 연구에서는 최대 출력 700 V, 12.5 A, 100 kHz)의 사양을 가지는 DC, pulse DC, modulated pulsed DC의 세 종류로 변환이 가능한 Power supply를 제작하여 Cr 박막을 증착하였다. 증착시 혼합기체 Ar/$N_2$를 사용하였으며, 박막의 특성을 sputtering power 종류별로 비교 평가하였다. 실험 결과얻어진 박막을 SEM과 XRD를 이용하여 분석하였다.

  • PDF

유도결합형 플라즈마를 사용한 반응성 마그네트론 스퍼터링에 의한 ZnO 박막 증착 및 특성분석 (Characterization and deposition of ZnO thin films by Reactive Magnetron Sputtering using Inductively-Coupled Plasma (ICP))

  • 김동선
    • 반도체디스플레이기술학회지
    • /
    • 제10권2호
    • /
    • pp.83-89
    • /
    • 2011
  • In this study, we investigated the effects of shutter control by Reactive Magnetron Sputtering using Inductively-Coupled Plasma(ICP) for obtaining ZnO thin films with high purity. The surface morphologies and structure of deposited ZnO thin films were characterized using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-ray Diffractometer (XRD). Also, optical and chemical properties of ZnO thin films were analyzed by Spectroscopic Ellipsometer (SE) and X-ray Photoelectron spectroscopy (XPS). As a result, it observed that ZnO thin films grown at reactive sputtering using shutter control and ICP were higher density, lower surface roughness, better crystallinity than other conventional sputtering deposition methods. For obtaining better quality deposition ZnO thin films, we will investigate the effects of substrate temperature and RF power on shutter control by a reactive magnetron sputtering using inductively-coupled plasma.

분말타겟의 dc 마그네트론 스퍼터에 의한 ITO박막의 특성 (Characteristics of ITO Films Deposited by dc Magnetron Sputter Using Powder Target)

  • 김현후;신성호;신재혁;박광자
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
    • /
    • pp.427-431
    • /
    • 2000
  • ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) and glass substrates have been deposited by a dc magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by sputtering power, oxygen partial pressure and films thickness. As the experimental results, the XRD patters of ITO films are influenced by sputtering power and pressure. As the power and pressure are increased, (411) peak is grown suddenly. the electrical resistivity is also increased, as the sputteing power and pressure are increased. Transmittance of ITO thin films in visible light ranges is lowered with increasing the sputtering power and film thickness. Reflectance of ITO films in infia-red region is decreased, as the power and pressure is increased.

  • PDF

DC 스퍼터링 증착에 의한 AI 전극을 갖는 전계발광소자 제작 (Fabrication of the Electroluminescence Devices with Al electrode deposited by DC sputtering)

  • 윤석범
    • 한국전기전자재료학회논문지
    • /
    • 제13권5호
    • /
    • pp.376-382
    • /
    • 2000
  • We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

  • PDF