• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.597-600
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• 1999

A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

• 대한치과보철학회지
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• 제34권3호
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• pp.533-538
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• 1996

도재 소부용 비귀금속합금의 표면처리가 금속과 도재간의 전단결합강도에 어떠한 영향을 미치는지 알아보기 위하여, 비귀금속 합금의 표면에 어떠한 처리도 하지 않는 대조군과 샌드브라스팅한 실험군, 스퍼트 에칭한 실험군, 그리고 샌드브라스팅후 스퍼트 에칭한 실험군으로 나눈 후에 각각의 시편에 통상적인 방법으로 도재를 소성한 후 인스트론 만능 시험기를 사용하여 전단결합강도를 측정하여 다음과 같은 결론을 얻었다. 1. 샌드브라스팅후 스퍼트 에칭한 실험군과 샌드브라스팅한 군은 대조군에 대해 높은 값을 나타내었다(P<0.05). 2. 스퍼트 에칭한 실험군은 대조군에 대해 차이가 없었다(P>0.05).

• 한국표면공학회지
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• 제52권2호
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• pp.84-89
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• 2019

We fabricated durable anti-reflective(AR) layer with silica globular coating on polymer by two steps. Firstly, nano-protrusions of polymer were formed by plasma etching known as R.I.E(reactive ion etching) process. Secondly, silica globular coating was deposited on polymer nano-protrusions for mechanically protective and optically enhancing AR layers by RF magnetron sputter. And then durable antireflective polymers were synthesized adjusting plasma power and time, working pressures of RIE and RF sputtering processes. Consequently, we acquired the average transmission (94.10%) in the visible spectral range 400-800 nm and the durability of AR layer was verified to sustain its transmission until 5,000 numbers by rubber test at a load of 500 gf.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 1997년도 춘계학술발표회 논문집
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• pp.302-306
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• 1997

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 1994년도 춘계학술발표회 프로그램 및 초록
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• pp.50-51
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• 1994

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.249-249
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• 2014

대면적 사각형 기판의 플라즈마 표면처리를 위한 유도 결합 플라즈마 발생 시스템의 수치 계산을 유체 모델을 이용하여 진행하였다. 연산 자원이 많이 요구되는 3차원 모델임을 감안하여 준중성 조건을 이용한 간략화 알고리즘을 사용하였다. Poisson 방정식을 풀지 않고 준중성 조건에 의한 양극성 전기장을 계산하여 이용한다. 쉬스는 모델을 이용하여 처리하였다. 1차적으로 사각 spiral 형태의 안테나를 가정하여 LCD 3세대 급의 기판을 대상으로 작성하였다. 다중 분할을 하지 않고 4개의 가지를 갖는 single spiral을 적용하였고 1.125 turn의 low impedance 구조에 대해서 계산하였다. Ar을 이용한 sputter etching 공정을 타겟으로 하여 기판에서의 Ar 이온 밀도 분포의 균일도가 어떤 설계 변수에 의해서 영향을 받는지를 중점적으로 계산하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.187-190
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• 2004

In this study, PST thin films were etched with inductively coupled $Cl_2/(Cl_2+Ar)$ plasmas. The etch characteristics of PST thin films as a function of $Cl_2/(Cl_2+Ar)$ gasmixtures were analyzed by using quadrupole mass spectrometer (QMS). Systematic studies were carried out as a function of the etching parameters, including the RF power and the working pressure. The maximum PST film etch rate is 56.2 nm/min, because a small addition of $Cl_2$ to the $Cl_2/Ar$ mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.726-729
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• 2004

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of hi content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562{\AA}/min$ and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was Proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 대한금속재료학회지
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• 제49권10호
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• pp.797-804
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• 2011

In this study, the mechanisms of the three steps (the polymer deposition step, the polymer etching step and the Si etching step) that constitute the Bosch process were investigated. The effects of radicals and ions on each step were quantitatively analyzed by comparing the simulated aspect ratio dependency of the deposition or etch rate with the experimental results. In the polymer deposition step, fluorocarbon polymer is deposited by chemical reactions of $CF_x$ radicals, of which the reaction probability is 0.13. Although the polymer etching step and the Si etching step were conducted under the same conditions, the etching mechanisms of polymer and Si were found to be quite different. In the polymer etching step, both chemical etching and physical sputter-etching contribute to the polymer etching. Whereas, in the Si etching step, Si is chemically etched by F radicals, of which the reactivity is greatly increased by the bombardment of energetic ions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.124-125
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• 2005

ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.