• Journal of the Korean Wood Science and Technology
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• 제48권4호
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• pp.417-430
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• 2020

4종의 판상형 목재제품의 방염제 도포량과 침지시간에 따른 방염성능을 분석하기 위하여 소방청의 방염성능기준에 따라 목재제품의 탄화길이와 탄화면적을 측정하였다. 잣나무 합판, 낙엽송 합판, 편백 판재, 타공처리된 자작나무 합판에 자체 개발된 방염제를 각각 300, 500 g/㎡씩 도포하고 방염처리되지 않은 시험편과 비교하였다. 일반적으로 방염제의 도포량이 증가함에 따라 탄화길이와 탄화면적이 감소하여 방염성능이 증가하는 경향을 나타냈으나, 낙엽송 합판을 제외하고 탄화길이와 탄화면적의 감소량이 크지 않았다. 타공처리된 자작나무 합판의 침지시간에 따른 방염성능은 60분의 침지시간까지 양의 상관관계를 나타냈으나, 그 이후 점차 완만해지는 경향을 보였다. 방염제의 도포량과 침지시간에 따른 목재제품의 방염성능은 추후 방염성능 기준에 맞는 불연·준불연 목재의 생산을 위한 기초자료로 이용될 것으로 기대된다.

• 한국산학기술학회논문지
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• 제11권3호
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• pp.1108-1114
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• 2010

Nocolok 브레이징을 하기 위해서는 플럭스 용액을 접합부 표면에 도포해야 하는데 저농도 플럭스와는 달리 고농도 플럭스는 필요한 부분만 도포해야 한다. 보통 기존의 브레이징로에서는 고농도 플럭스 도포를 수작업으로 하고 있는데 작업의 비효율성을 초래하고 플럭스 분진 날림 및 열 등으로 인해 작업 환경을 악화시킨다. 그러므로 경제적이고 효율적인 고농도 플럭스 자동 도포 장치의 개발을 통한 품질 향상 및 생산 단가 저감 등이 절실한 실정이다. 따라서, 본 연구에서는 고농도 플럭스 자동 도포 시스템을 설계 및 제작하였고 이를 직접 브레이징로에 장착하여 자동화 공정으로 개선시켜 기피 작업 해소 및 생산성 향상을 이루었다.

• 한국가시화정보학회지
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• 제11권3호
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• pp.12-16
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• 2013

The impact and spreading behaviors of silicon dioxide nanoparticle colloidal suspension droplets were quantitatively visualized using a high-speed imaging system. Millimeter-scale droplets were generated by a syringe pump and a needle. Droplets of different velocity were impacted on a non-porous solid surface. Images were consecutively recorded using a CMOS high-speed camera at 5000 fps (frames per second) for millimeter-scale droplets. Temporal variations of droplet diameter, velocity and maximum spreading diameters were evaluated from the sequential images captured for each experimental condition. Effects of Reynolds number, Weber number, and particle concentration were investigated experimentally.

• Journal of the Korean Wood Science and Technology
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• 제17권2호
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• pp.20-25
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• 1989

This study was carried out in order to investigate the treatment effect of PEG soln which is a common dimensional stabilizer to green log. sawing panel etc, on bonding product including plywood widely-used in secondary processing unit. The 30% concentration of aqueous PEG soln. with molecular weight of 400, 1.000 and 4,000 were prepared respectively, and also dipping the veneer in the PEG soln. spreading the PEG soln. on veneer and mixing the PEG soln. in the adhesive were allowed. Then the ratio of PEG impregnation on veneer, the adhesive strength of plywood were epitomized as follows: The ratio of impregnation by PEG 4,000 at dipping condition was highest. while that by PEG 400 at same condition was lowest. However, the effect of PEG molecular weight on the ratio of impregnation at spreading condition did not occur. 2. The adhesive strength was great in the order of 4,000>400>1,000 in molecular weight of PEG at dipping and spreading conditions. In case of mixing the PEG soln. in the adhesive, the adhesive strength was great in the order of 400>1,000>4,000 in molecular weight of PEG. Throughout three treatment conditions, PEG 400 was relatively favourable with about 10kg/$cm^2$ dry strength. 3. The adhesive strength was great 10 the order of spreading >dipping >mixing condition. 4. Although adhesive strength with the 30% concentration of aqueous PEG soln. was decreased by 35% and over, compared to control (non-treatment) adhesive strength, all types of PEG treatment except mixing the PEG soln. in the adhesive exceeded the standard dry strength for common use panel. 7.5kg/$cm^2$. 5. In warm water-proof test, the adhesive strengths by all PEG treatment conditions were less than the standard wet strength, 7.5kg cot, and also delamination of glue line occured mostly in mixing in the PEG soln. in the adhesive condition.

• 멤브레인
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• 제29권2호
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• pp.105-110
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• 2019

다공성 분리막은 입자성 물질을 제거하는데 산업적으로 다양하게 응용되고 있다. 기존 다공성 분리막 제작 방법과 다르게, 용액퍼짐 상분리법은 매우 간단하게 기공을 형성할 수 있다. 먼저 지지층으로 메쉬 위에 물을 적신 후, 물과 혼합되지 않은 용매에 폴리설폰 용액을 흘려준다. 이때 물과 혼합되지 않은 용매는 쉽게 기화되어 폴리설폰은 얇은 막으로 만들어지게 된다. 기공을 형성하기 위해 폴리설폰 용액에 물과 혼합할 수 있는 물질을 넣게 되면, 넣어주는 농도 비율에 따라 기공크기를 조절할 수 있게 된다. 막의 두께는 쉽게 용액의 농도로 조절이 된다. 다공성 분리막은 메쉬의 형성을 그대로 유지하고 있어 3차원 구조체를 형성하는데 매우 유용하다. 본 연구에서 제시된 용액 퍼짐 상분리법은 매우 낮은 생산단가와 쉬운 공정조절에 의해 기존 분리막에 비해 높은 가격경쟁력을 가질 수 있는 특징을 보이고 있다.

• 멤브레인
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• 제6권4호
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• pp.265-272
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• 1996

금속이온 분리를 위한 운반체 지지형 (고분자/운반체) 복합막을 수면전개법에 의하여 제조하였다. 이들 막의 형상은 전개용액의 물성에 의하여 영향을 받는다. (고분자/18-crown-6) 복합용액의 표면장력은 18-crown-6의 농도가 증가함에 따라 감소하는 경향을 나타내며, 고분자에 따른 용액의 표면장력은 PVC>PS>CA 순서로 감소하였다. 점도는 18-crown-6의 농도가 증가함에 따라 PVC계와 PS계 용액은 큰 변화가 없으나 CA계 용액은 감소하는 경향을 나타내었다. 18-crown-6 환형고리분자는 고분자쇄 사이에서 전기적인 완충역할을 하여 고분자쇄간의 분자간력을 약화시켜줌으로써 복합 용액의 전개성을 증가시켰다. 복합박막의 표면형상은 단일박막보다 균일하였으며, 18-crown-6가 증가함에 따라 전후면은 모두 균일한 구조극 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.63-63
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to observe static DC characteristics, such as a threshold voltage ($V_{TH}$) and a figure of merit ($V_B^2/R_{SP,ON}$). To optimize the static DC characteristics, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. Design parameters are optimized using 2D numerical simulations and the 4H-SiC DMOSFET structure results in high figure of merit ($V_B^2/R_{SP,ON}$>~$340MW/cm^2$) for a power MOSFET in $V_B{\sim}1200V$ range.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.637-640
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• 2009

In this work, we demonstrate 800 V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B\;^2/R_{SP,ON}$), To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below $^{\sim}$3.8 V, and high figure of merit ($V_B\;^2/R_{SP,ON}$>$^{\sim}$200 $MW/cm^2$) for a power MOSFET in $V_B\;^{\sim}$800 V range.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.

• 한국산업보건학회지
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• 제32권2호
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• pp.111-115
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• 2022

Objectives: The purpose of this study is to verify whether droplet-induced propagation, the main route of infectious diseases such as COVID-19, can occur in semiconductor FAB (Fabrication), based on research results on general droplet propagation. Methods: Through data surveys droplet propagation was modeled through simulation and experimental case analysis according to general (without mask) and mask-wearing conditions, and the risk of droplet propagation was inferred by reflecting semiconductor FAB operation conditions (air current, air conditioning system, humidity, filter conditions). Results: Based on the results investigated to predict the possibility of spreading infectious diseases in semiconductor FAB, the total amount of droplet propagation (concentration), propagation distance, and virus life in FAB were inferred by reflecting the management parameter of semiconductor FAB. Conclusions: The total amount(concentration) of droplet propagation in the semiconductor fab is most affected by the presence or absence of wearing a mask and the line air dilution rate has some influence. when worn it spreads within 0.35~1m, and since the humidity is constant the virus can survive in the air for up to 3 hours. as a result the semiconductor fab is judged to be and effective space to block virus propagation due to the special environmental condition of a clean room.