• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.236.2-236.2
• /
• 2007

• Journal of Magnetics
• /
• v.2 no.3
• /
• pp.72-75
• /
• 1997

The temperature dependent saturation magnetization curve of amorphous Fe67 Co18B14Si1, alloy was measured using a SQUID magnetometer and vibrating sample magnetometer from 5 K up to 800 K. Inelastic neutron neutron scattering measurements also have been used to study the long wavelength spin dynamics of this high Tc amorphous ferromagnetic alloy. The magnon dispersion curve exhibit the conventional quadratic relationship E = D (T) q2 + $\Delta$, typical of an iso=obtained from a low temperature magnetization curve, which was consistent with the value obtained from the analysis oif inelastic neutron scattering data after consideration of its temperature dependence.

• Journal of Magnetics
• /
• v.12 no.3
• /
• pp.118-123
• /
• 2007

We have studied the effect of Au-Cu back layer system ${\sim}10{\AA}$ thick on the properties of a spin valve. The back layers were Cu, Au, co-sputtered $Cu_xAu_{1-x}$, laminated $[Au/Cu]_n$. and bi-layer [Au/Cu]. When Au was added to the Cu, the resistance of the spin valve abruptly increased most likely due to impurity scattering. The GMR values were not increased significantly for all the structures. In the case of co-sputtered $Cu_xAu_{1-x}$, the changes in the resistance, ${\Delta}R$, was increased at a composition of ${\sim}Au_{0.5}Cu_{0.5}$. This increase in ${\Delta}R$ is due to increase in the resistance and not from the enhanced spin-dependent scattering. The structural analyses showed that the orthorhombic $Au_{0.5}Cu_{0.5}$ was formed in the back layer instead of the face-centered tetragonal $Au_{0.5}Cu_{0.5}$ as we expected. Thermal annealing over $400^{\circ}C$ may be required to have face-centered tetragonal in the $10{\AA}$ thick ultra-thin film. In the case of a laminated or bi-layered back layer, the properties of the spin valve were improved, which may be attributed to the increase in the mean free path of conduction electrons.

• Journal of the Korean Magnetics Society
• /
• v.17 no.5
• /
• pp.210-214
• /
• 2007

Recent years have seen a rapid development of spintronics. One of the major achievements of this field is the understanding of spin dependent process in various physical systems, for example, metallic multilayers showing the giant magnetoresistance (GMR). Today devices based on the GMR are revolutionizing electronic data storage. In this paper, we review recent developments in the research on GMR of low dimensional structures. We describe the magnetoresistance properties of magnetic multilayers, multilayered nanowires and nonopillars, etc.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.60-60
• /
• 2011

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active research areas in spintronics. The high magnetoresistance and the high spin polarization (P) of electrons in the ferromagnetic electrodes of tunnel junction or intermediate layers are required. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, P ~ 100% spin polarization, and has a high Curie temperature (TC~850 K). Experiments demonstrated that the P~($80{\pm}5$)%, ~($60{\pm}5$)%, and ~40-55% for epitaxial (111), (110) and (001)-oriented Fe3O4 thin films, respectively. Epitaxial Fe3O4 films may enable us to investigate the effects of half metals on the spin transport without grain-boundary scattering.In addition, it has been reported that the Verwey transition (TV, a first order metal-insulator transition) of 120 K in bulk Fe3O4 is strongly affected by many parameters such as stoichiometry and stress, etc. Here we report that the growth modes, magnetism and transport properties of Fe3O4 thin films were strongly dependent on the oxygen pressure during film growth. The average roughness decreases from 1.021 to 0.263 nm for the oxygen pressure increase from $2.3{\times}10-7$ to $8.2{\times}10^{-6}$ Torr, respectively. The 120 K Verwey transition in Fe3O4 was disappeared for the sample grown under high oxygen pressure.

• Journal of the Korean Magnetics Society
• /
• v.8 no.5
• /
• pp.288-294
• /
• 1998

Effect of degree of intermixing at the Ta/NiFe interface induced by varying applied substrate bias voltage during NiFe free layer deposition on change of magnetoresistance in Substrate/Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayers was investigated. It was found that the optimum NiFe free layer thickness showing a maximum MR increase with increasing the bias voltage. The increase of the optimum thickness was due to the increase of the intermixed layer thickness with a bias voltage. The weak ferromagnetic or non ferromagnetic intermixed layer plays as a spin-independent scattering region and does not contribute on spin-dependent scattering. The existence of the intermixed layer was proved by the means of electrical resistivity and magnetization changes. In the present study, the optimum "effective" free layer thickness which gives the highest MR ratio was a constant independent of the magnitude of the bias voltage we have used.have used.

• BMB Reports
• /
• v.42 no.4
• /
• pp.223-226
• /
• 2009

We measured the pH-induced spectral changes of yeast iso-1-cytochrome c on silver nanoparticle surfaces using surface-enhanced resonance Raman scattering (SERRS) at 457.9 nm. At a pH of ~3, the Met80 ligand in yeast iso-1-cytochrome c is assumed to dissociate, leading to a marked conformational change as evidenced by the vibrational spectral shifts. The Soret band at ~410 nm in the UV-Vis spectrum shifted to ~396 nm at pH~3, indicating a transition from a low spin state to a high spin state from a weak interaction with a water molecule. Thus, SERRS spectroscopy can measure the pH-induced denaturalization of cyt c adsorbed on metal nanoparticle surfaces at a lower concentration with a better sensitivity than ordinary resonance Raman spectroscopy.

• Journal of Magnetics
• /
• v.6 no.1
• /
• pp.1-4
• /
• 2001

We have used acetic acids ethanol and distilled water as a solvent to synthesize $La_{2/3}Sr_{1/3}Mn_{0.99}{^{57}}Fe_{0.01}O_3$(LSMFO) precursor. Crack-free LSMFO granular polycrystalline thin films have been deposited on thermally oxidized silicon substrates by spin coaling. The dependence of crystallization, surface morphology, magnetic and transport properties on annealing temperature was investigated. With increasing annealing temperature, the metal-semiconductor (insulator) transition temperature and the magnetic moment decrease while the resistivity increases. The lattice constants remain almost unchanged. For LSMFO thin films, spin-dependent interfacial tunneling and/or scattering magnetoresistance were observed. Our results indicate that the annealing temperature is very important in determining the intrinsic and extrinsic magnetotransport properties.

• Journal of Magnetics
• /
• v.17 no.4
• /
• pp.265-270
• /
• 2012

We report improved low-field magnetoresistance (LFMR) effects of the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3-Mn_3O_4$ composite films with the nominal composition of $La_{0.7}Sr_{0.3}MnO_3$(LSMO)-50 mol% $Mn_3O_4$. The composite films were fabricated by ex-situ solid phase crystallization (SPC) of amorphous films at the annealing temperature region of $900-1100^{\circ}C$ for 2 h in a pure oxygen atmosphere. The amorphous films were deposited on polycrystalline $BaZrO_3$ (poly-BZO) substrates by dc-magnetron sputtering at room temperature. The Curie temperatures ($T_C$) of all composite films were insignificantly altered in the range of 368-372 K. The highest LFMR value of 1.29 % in 0.5 kOe with the maximum dMR/dH value of $37.4%kOe^{-1}$ at 300 K was obtained from 900 nm-thick composite film annealed at $1100^{\circ}C$. The improved LFMR properties of the composite films are attributed to effective spin-dependent scattering at the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3$ grain boundaries sharpened by adjacent chemically compatible $Mn_3O_4$ grains.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.3
• /
• pp.276-283
• /
• 2005

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.