• Proceedings of the Korean Magnestics Society Conference
• /
• 2005.12a
• /
• pp.78-79
• /
• 2005

• Journal of Magnetics
• /
• v.14 no.1
• /
• pp.18-22
• /
• 2009

The shape anisotropy effect of a giant magnetoresistance-spin valves (GMR-SV) device with a glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe layered structure for use in the detection of magnetic property of molecules within a cell was investigated. The patterned device was given uniaxial anisotropy during the sputtering deposition and vacuum post-annealing, which was performed at $200^{\circ}C$ under a 300 Oe magnetic field. The pattern size of the device, which was prepared through the photolithography process, was $2{\times}15\;{\mu}m^2$. The experimental results confirmed that the best design for a GMR-SV device to be used as a biosensor is to have both the axis sensing current and the easy axis of the pinned NiO/NiFe/CoFe triple layer oriented in the direction of the device's width, while the easy axis of the free CoFe/NiFe bilayer should be pointed along the long axis of the device.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.06a
• /
• pp.24-24
• /
• 2003

Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.

• Journal of the Korean Magnetics Society
• /
• v.15 no.4
• /
• pp.226-230
• /
• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• Journal of the Korean Magnetics Society
• /
• v.16 no.5
• /
• pp.240-244
• /
• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Journal of the Korean Magnetics Society
• /
• v.11 no.5
• /
• pp.211-216
• /
• 2001

Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.

• Journal of the Korean Magnetics Society
• /
• v.23 no.3
• /
• pp.98-103
• /
• 2013

The magnetic easy axis of the ferromagnetic layer for the dual-type GMR-SV (giant magnetoresistance-spin valve) having NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multuilayer structure controlled by the post annealing treatment. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetic easy axis of the free and the pinned layers are measured by the different angles for the applied fields. By investigating the switching process of magnetization for an arbitrary measuring direction, the optimum annealing temperature having a steady and isotropy magnetic sensitivity of 2.0 %/Oe was $105^{\circ}C$. This result suggests that the in-plane orthogonal magnetization for the dual-type GMR-SV film can be used by a high sensitive biosensor.

• Journal of the Korean Magnetics Society
• /
• v.8 no.5
• /
• pp.288-294
• /
• 1998

Effect of degree of intermixing at the Ta/NiFe interface induced by varying applied substrate bias voltage during NiFe free layer deposition on change of magnetoresistance in Substrate/Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayers was investigated. It was found that the optimum NiFe free layer thickness showing a maximum MR increase with increasing the bias voltage. The increase of the optimum thickness was due to the increase of the intermixed layer thickness with a bias voltage. The weak ferromagnetic or non ferromagnetic intermixed layer plays as a spin-independent scattering region and does not contribute on spin-dependent scattering. The existence of the intermixed layer was proved by the means of electrical resistivity and magnetization changes. In the present study, the optimum "effective" free layer thickness which gives the highest MR ratio was a constant independent of the magnitude of the bias voltage we have used.have used.

• Journal of the Korean Magnetics Society
• /
• v.14 no.1
• /
• pp.25-28
• /
• 2004

The dependence of sensitivity, MR ratio, coercivity (Hc) and switching fields as a function of thickness of each magnetic layers(Co, NiFe and Cu) were investigated in pseudo spin valves with a structure of Ta/NiFe/Cu/Co. As measured results dependence of the thickness of each magnetic layer, we obtained MR ratio of 7.26% for Ta(4 nm)/NiFe(7.5 nm)/Cu(3 nm)/Co(5 nm) pseudo spin valves. Also, we could control properties of magnetoresistance for independent magnetization courses of each magnetic layer. Especially, we found that we could control coercivity as constant MR ratio dependence of Co thickness.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2006.11a
• /
• pp.52-53
• /
• 2006