• Korean Journal of Materials Research
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• v.23 no.3
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• pp.177-182
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• 2013

Nanosphere lithography is an inexpensive, simple, high-throughput nanofabrication process. NSL can be done in different ways, such as drop coating, spin coating or by means of tilted evaporation. Nitride-based light-emitting diodes (LEDs) are applied in different places, such as liquid crystal displays and traffic signals. The characteristics of gallium nitride (GaN)-based LEDs can be enhanced by fabricating nanopatterns on the top surface of the LEDs. In this work, we created differently sized (420, 320 and 140 nm) nanopatterns on the upper surfaces of GaN-based LEDs using a modified nanosphere lithography technique. This technique is quite different from conventional NSL. The characterization of the patterned GaN-based LEDs revealed a dependence on the size of the holes in the pattern created on the LED surface. The depths of the patterns were 80 nm as confirmed by AFM. Both the photoluminescence and electroluminescence intensities of the patterned LEDs were found to increase with an increase in the size of holes in the pattern. The light output power of the 420-nm hole-patterned LED was 1.16 times higher than that of a conventional LED. Moreover, the current-voltage characteristics were improved with the fabrication of differently sized patterns over the LED surface using the proposed nanosphere lithography method.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.5
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• pp.212-217
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• 2021

The applicability of the white LED from the blue LED of the coating film as a binder for surface and curved coatings were confirmed. The particle size of YAG is D₅₀: 9~10 ㎛, and the crystal structure is garnet (Y₃Al₅O₁₂), cubic. The coating film had no cracks, at the same time, the silica sol was uniformly coated with YAG phosphor, and the YAG content and thickness in the coating film showed a tendency to increase up to 40 ㎛ in proportion to the increase in the amount added. Furthermore, as the YAG content increased, the PL emission intensity increased and the color coordinate shift toward the end of the chromatic locus curve was confirmed.

• Journal of the Korean Chemical Society
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• v.45 no.2
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• pp.156-161
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• 2001

Various oxidation states of Polyaniline(PANI) were chemically synthesized, and characterized by FT-IR, UV-Vis, GPC, TG-DTA, Single layer light emitting diodes(LED) were perpared by spin coating of LEB-PANI solutions which have various oxidation states onto an ITO substrate and subsequent vacuum deposition of aluminum top electrode and then current-voltage characteristics. EL spectrum was investigated It was found that ${\pi}$-${\pi}$* transition were shifled to longer wavelength and molecular excition transition were decreased in the UV-Vis spectra and the intensity of EL and PL were increased as the contents of fully reduced form LEB increased. The turn-on voltage of ITO/LEB/AI structured LED was 5 V. It was found that the white light was emitted only from the phase with reduced epeat unit.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.451-451
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• 2012

Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 1996.06c
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• pp.918-925
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• 1996

The effect of structured water by dissolution of xenon was examined from the view point of the suppression of both browning and respiratory metabolism of broccoli. The structured water is formed duet to hydrophobic interaction when xenon gas dissolves into water. NMR measurements were carried out to determine proton spin-spin relaxation time, T2, for water. There was a difference in proton T2 between distilled water and structured water. This can be interpreted as the change of water structure. Fro the broccoli cut in half stored for 16 days at 279K, the section color did not change appreciably for the sample whose water was structured by dissolution of xenon whose initial partial pressure was 0.39MPa. In contrast to this, the browning of section surface was observed for the sample stored under the condition of nitrogen gas at the same partial pressure as xenon and for the sample stored under atmospheric condition . These results led to the conclusion that the suppression of b owning by oxidation was due to structured water but not to applied pressure. Adding to this, the water structured by xenon has resulted in suppression of respiratory metabolism of broccoli.

• Journal of the Korean Society of Propulsion Engineers
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• v.24 no.5
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• pp.91-102
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• 2020

Recently, a new space era has evolved in which commercial companies' led space development has begun. In this era, commercial companies actively participate in space development as the size of the small satellite market and small launch vehicle market is expanding. Through space development, developed countries are making efforts to reduce development, production, and operation costs to secure the competitiveness of small launch vehicles. In this study, the development trend of small launch vehicles and required technologies for space development were analyzed and summarized. Thus, research and development is urgently needed so that spin-on technologies, such as electric pumps and additive manufacturing, can be utilized for space development.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.317-332
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• 1998

The adiabatic nuclear demagnetization cooling technique has reduced the lowest accessible temperature to the regime of microkelvin, and consequently led to a large expansion in microkelvin physics such as solid and liquid $^{3}He$, superconductivity of noble metals, spin glass transition, and nuclear magnetism. Our ability to reach temperature in microkelvin regime has greatly facilitated by the developments of dilution refrigerator and superconductivity magnet. It is appropriate to divide nuclear demagnetization cooling into two categories; those in which only the nuclear spin system is cooled down and those in which the lattice and conduction electrons in the refrigerant or the specimen are also cooled by the cooling power of nuclear spin system. The former cooling technique has utilized to investigate the nuclear magnetism at temperature in nanokelvin regime. The latter is widely used in studying the phenomena occurring in microkelvin regime. In this review paper, we will discuss the basic principles of nuclear demagnetization cooling and its applications. This work is supported by the Basic Science Research Institute Program under contract number BSRI-97-2404.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.249-254
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• 2022

To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), the use of a densely packed QD film is crucial to prevent the formation of leakage current pathways and increase in interface resistance. Spin coating is the most common method to deposit QDs; however, this method often produces pinholes that can act as short-circuit paths within devices. Since state-of-the-art QD-LEDs typically employ mono- or bi-layer QDs as an emissive layer because of their low conductivities, the use of a densely packed and pinhole-free QD film is essential. Herein, we introduce the Langmuir-Blodgett (LB) technique as a deposition method for the fabricate densely packed QD films in QD-LEDs. The LB technique successfully transfers a highly dense monolayer of QDs onto the substrate, and multilayer deposition is performed by repeating the transfer process. To validate the comparability of the LB technique with the standard QD-LED fabrication process, we fabricate and compare the performance of LB-based QD-LEDs to that of the spin-coating-based device. Owing to the non-destructiveness of the LB technique, the electroluminescence efficiency of the LB-based QD-LEDs is similar to that of the standard spin coating-based device. Thus, the LB technique is promising for use in optoelectronic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.97-97
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• 2010

We demonstrate the hybrid polymer-quantum dot based multi-functional device (Organic bistable devices, Light-emitting diode, and Photovoltaic cell) with a single active-layer structure consisting of CdSe/ZnS semiconductor quantum-dots (QDs) dispersed in a poly N-vinylcarbazole (PVK) and 1,3,5-tirs- (N-phenylbenzimidazol-2-yl) benzene (TPBi) fabricated on indium-tin-oxide (ITO)/glass substrate by using a simple spin coating technique. The multi-functionality of the device as Organic bistable device (OBD), Light Emitting Diode (LED), and Photovoltaic cell can be successfully achieved by adding an electron transport layer (ETL) TPBi to OBD for attaining the functions of LED and Photovoltaic cell in which the lowest unoccupied molecular orbital (LUMO) level of TPBi is positioned at the energy level between the conduction band of CdSe/ZnS and LiF/Al electrode (band-gap engineering). Through transmission electron microscopy (TEM) study, the active layer of the device has a p-i-n structure of a consolidated core-shell structure in which semiconductor QDs are uniformly and isotropically adsorbed on the surface of a p-type polymer core and the n-type small molecular organic materials surround the semiconductor QDs.