• Journal of Microbiology and Biotechnology
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• 제19권9호
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• pp.966-971
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• 2009

Peroxidase from Coprinus cinereus (CiP) has attracted attention for its high specific activity and broad substrate spectrum compared with other peroxidases. In this study, the functional expression of this peroxidase was successfully achieved in the methylotrophic yeast Pichia pastoris. The expression level of CiP was increased by varying the microbial hosts and the expression promoters. Since a signal sequence, such as the alpha mating factor of Saccharomyces cerevisiae, was placed preceding the cDNA of the CiP coding gene, expressed recombinant CiP (rCiP) was secreted into the culture broth. The Mut Pichia pastoris host showed a 3-fold higher peroxidase activity, as well as 2-fold higher growth rate, compared with the $Mut^s $ Pichia pastoris host. Furthermore, the AOX1 promoter facilitated a 5-fold higher expression of rCiP than did the GAP promoter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.121-122
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• 2006

Single crystal of $CdIn_2Te_4$ were grown by the Bridgman method without using seed crystals. From photocurrent measurements, its was found that three peaks, A, B, and C, correspond to the instrinsic transition from the valence band states of ${\Gamma}_7$(A), ${\Gamma}_6$(B), and ${\Gamma}_7$(C) to the conducton band states of ${\Gamma}_6$, respectively. Crystal field splitting and spin orbit splitting were found to be at 0.2360 eV and 0.1119 eV, respectively, from found to be photocurrent spectroscopy.

• 한국진공학회지
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• 제5권2호
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• pp.127-132
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• 1996

We measured photoreflectance spectrum characteristics of InGaAs grown by MBE method on semi-insulating GaAs. The PR signal splitting of substate and epilayer was observed. The band gap energy was about 1.40 eV. It make to 8 meV difference when it is fitted by Pan's equation. The reason is stress on the interface, which is due to lattice mismatch between epilayer and substate . We became to know that reason influence crystalline on growing sample. In InGaAs epilayer, temperature dependency is low. The efficiency of photo absorption is high and activate over 200K. In this case when it is annealed at $400^{\circ}C$ below growing temperature, PR signal splitting is remarkable and crystalline is inhanced.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권2호
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• pp.54-57
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• 2005

Photoreflectance (PR) has been measured to investigate the characterization of the Si$_{3}$N$_{4}$Al$_{0.21}$ Ga$_{0.79}$As/GaAs and Al$_{0.21}$Ga$_{0.79}$As/GaAs heterostructures. In the PR spectrum, the caplayer thickness was 170 nm and Si$_{3}$N$_{4}$ was utilized as the capping material. The C peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, in the presence of the Si$_{2}$N$_{4}$ cap layer, band gap energy was low shifted. This result indicates that the Si$_{3}$N$_{4}$ cap layer controlled evaporation of the As atom.

• 한국전산유체공학회지
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• 제11권2호
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• pp.49-55
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• 2006

This study investigates the oscillatory thermal convection of a fluid with Pr=0.02 in a wide-gap horizontal annulus with constant heat flux inner wall. When Pr=0.02, dual steady-state flows are not found. After the first Hopf bifurcation from a steady to a time-periodic flow, five successive period-doubling bifurcations are recorded before chaos. The power spectrum shows the $period-2^4\;and\;2^5$ flows clearly, and a window of period $3{\times}2^3$ flow is found in the chaotic regime. The approximate value of the Feigenbaum number for the last three period-doubling bifurcations is 4.76. The transition route to chaos of the present simulations is consistent with the period-doubling route of Feigenbaum.

• 전자공학회논문지A
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• 제32A권9호
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• pp.128-134
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• 1995

A fiber-optic temperature sensor utilizing an optical absorption device (InP) was fabricated. The spectrum of transmitted light through an InP device was obtained at the three temperatures(249 K, 369 K). A stabilized LED(light emmiting diode) driver, photoreceiver, and signal proocessing electronics were designed. An intensity referencing technique was adopted in order to minimize the fluctuation of output signal due to external pertubation of the transmitting optical fiber. The optical absorption edge of the InP device moves to longer wavelength at a rate of 0.42 nm / K, and energy gap of InP is 1.35 eV at room temperature. From these results, it is concluded that the InP device has temperature dynamic range of 300 K with LED of center wavelength of 940nm and spectral width of 50nm. The designed fiber-optic temperature sensor system showed good linearity within the temperature range from -30$^{\circ}C$ to + 150$^{\circ}C$.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2001년도 추계학술대회논문집 I
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• pp.39-45
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• 2001

As HDD moves into new emerging consumer markets, expectations on quietness, as well as performance, have increased. The acoustic noise of HDD seems to be closely related to excitation of the spindle motor system. Recently, as a simple approach to reduce disk vibration, thicker disk, which is 50 mil (1.27mm), starts to use in HDD industry. Noise spectrum of HDD with use of 50 mil disk shows the dominant peaks of 900 Hz, mainly caused by excitations of the disk due to air windage effect. In order to reduce noise at this specific frequency, squeeze air damping effect was investigated by extremely reducing the gap between the disk and the base platform.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

• Journal of Electrical Engineering and Technology
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• 제6권3호
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• pp.356-363
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• 2011

Vibrations and noise in electrical machines are directly related to the characteristics of the radial forces on one hand, and mechanical behavior on the other [1, 4]. The characteristics of these forces depend on the air gap flux density, which is also influenced by other factors, such as stator slots and poles, saturation level, winding type, and certain faults. The aim of this work is to investigate the effect of eccentricity and demagnetization faults on electromagnetic noise generated by the external surface of Permanent Magnet Synchronous Machine [PMSM]. For this purpose, an analytical electromagnetic vibroacoustic model is developed. The results confirm the effect of eccentricity and demagnetization fault in generating some low modes radial forces.

• KIEAE Journal
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• 제4권2호
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• pp.37-40
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• 2004

New visible photocatalyst(Nanovis$^{(R)}$) has been synthesized to overcome the barrier of limitation of UV light utilization of current $TiO_2$ photocatalyst. It was found that red shift of absorption spectrum to 550nm was achieved. Its physical properties were characterized by XRD, BET and TEM. It is also observed that Nanovis$^{(R)}$ has a photocatalytic activity for photodegradation of Trichloroethylene under visible light irradiation. V,VII group doped into substitutional sites of $TiO_2$ has proven to be indispensable for band-gap narrowing and photocatalytic activity. These test results lead us to conclude that Nanovis$^{(R)}$ can be used for IAQ improvemen and for photocatalytic water splitting to hydrogen.