Photo reflectance Measurement in Si$_{3}$N$_{4}$/ Al$_{0.21}$Ga$_{0.79}$ As/GaAs Heterostructure

  • Yu Jae-In (Department of Physics, Yeungnam University) ;
  • Park Hun-Bo (Department of Physics, Yeungnam University) ;
  • Choi Sang-Su (Department of Physics, Yeungnam University) ;
  • Kim Ki-Hong (Department of Physics, Yeungnam University) ;
  • Baet In-Ho (Department of Physics, Yeungnam University)
  • Published : 2005.04.01

Abstract

Photoreflectance (PR) has been measured to investigate the characterization of the Si$_{3}$N$_{4}$Al$_{0.21}$ Ga$_{0.79}$As/GaAs and Al$_{0.21}$Ga$_{0.79}$As/GaAs heterostructures. In the PR spectrum, the caplayer thickness was 170 nm and Si$_{3}$N$_{4}$ was utilized as the capping material. The C peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, in the presence of the Si$_{2}$N$_{4}$ cap layer, band gap energy was low shifted. This result indicates that the Si$_{3}$N$_{4}$ cap layer controlled evaporation of the As atom.

Keywords

References

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