• Restorative Dentistry and Endodontics
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• v.26 no.1
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• pp.32-40
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• 2001

The aim of this study was to evaluate the effect of various polymerization techniques on the microleakage of compomer restorations. Fifty extracted human premolars and molar were used and randomly divided into 5 groups. After cavity preparation, compomer (F2000$^{\circledR}$) was filled according to the manufacturer's directions. All groups, except group 5, were filled using an incremental technique. Group 1 was polymerized for 40 seconds at a continuous 485mW/$\textrm{cm}^2$ with a VIP$^{\circledR}$(Bisco, USA) light cure unit. Group 2 was polymerized for 20 seconds at 345mW/$\textrm{cm}^2$ and then for 20 seconds at 645mW/$\textrm{cm}^2$ with the VIP equation omitted light cure unit. Group 3 was polymerized at 400mW/$\textrm{cm}^2$, gradually increased to 50mW/$\textrm{cm}^2$ 10 seconds until 550mW/$\textrm{cm}^2$ was reached; total 40 seconds with a Spectrum 800$^{\circledR}$ (Dentsply Caulk, USA) light cure unit. Group 4 was polymerized for 3 seconds using an incremental technique with a Flipo$^{\circledR}$ (LOKKi, France) light cure unit. Group 5 was polymerized for 3 seconds using a bulk fill technique with the Flipo$^{\circledR}$ light cure unit. The specimens were embedded with acrylic resin, and were sectioned with diamond saws in a mesiodistal direction along the longitudinal axis of the tooth so as to pass through the center of the restoration, and three surfaces (occlusal, pulpal, and gingival) were examined with SEM. The results were as follows ; 1. Group 5 showed a significantly larger gaps compared to other groups on the gingival, occlusal, and pulpal walls. 2. All groups except group 5 had no statistically significant gap on the gingival, occlusal, and pulpal walls. 3. There was no significant correlation between the amount of enamel on the gingival and occlusal walls and polymerization shrinkage.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1555-1562
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• 2015

Metal oxide semiconductors have been applied in several areas, such as solar cells, sensor, optical elements and displays, due to the high surface area, unique electrical and optical characteristics. Zinc oxide among the metal oxide has excellent physicochemical properties. Zinc oxide is a n-type semiconductor with a wide direct transition band gap of 3.37 eV at room temperature and large exciton binding energy of 60 meV. Cation-doped zinc oxide studies were conducted to complement the electrical and optical characteristics. In this paper, Al-doped ZnO was synthesized by hydrothermal synthesis using microwaves. ZnO was synthesized by adjusting the precursor ratio and using different dopants. The optimal ZnO synthesis conditions for crystal shape and optical properties were determined. The optical properties of aluminum doped zinc oxide were then examined by SEM, XRD, PL, UV-vis absorbance spectrum, and EDS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.122-123
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.9501 eV - $(8.79{\times}10^{-4}\;eV/K)T^2$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{1^-}$exciton peaks for n=1.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.93-93
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• 2010

Semiconductor nanocrystal quantum dots (NQDs) have recently attracted considerable interest for use in photovoltaics. Band gaps of NQDs can be tuned over a considerable range by varying the particle size thereby allowing enhance absorption of solar spectrum. NQDs, synthesized using colloidal routes, are solution processable and promise for a large-area fabrication. Recent advancements in multiple-exciton generation in NQD solutions have afforded possible efficiency improvements. Various architectures have attempted to utilize the NQDs in photovoltaics, such as NQD-sensitized solar cell, NQD-bulk-heterojuction solar cell and etc. Here we have fabricated CdSe NQDs with the band gap of 1.8 eV to 2.1 eV on thin-layers of p-type organic crystallites (1.61 eV) to realize a donor-acceptor type heterojuction solar cell. Simple structure as it was, we could control the interface of electrode-p-layer, and n-p-layer and monitor the following efficiency changes. Specifically, surface molecules adsorbed on the NQDs were critical to enhance the carrier transfer among the n-layer where we could verify by measuring the photo-response from the NQD layers only. Further modifying the annealing temperature after the deposition of NQDs on p-layers allowed higher conversion efficiencies in the device.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.504-507
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• 2012

Synthesis of RGO (reduced graphene oxide)-CdS composite material was performed through CBD (chemical bath deposition) method in which graphene oxide served as the support and Cadmium Sulfate Hydrate as the starting material. Graphene-based semiconductor photocatalysts have attracted extensive attention due to their usefulness for environmental and energy applications. The band gap (2.4 eV) of CdS corresponds well with the spectrum of sunlight because the crystalline phase, size, morphology, specic surface area and defects, etc., of CdS can affect its photocatalytic activity. The specific surface structure (morphology) of the photocatalyst can be effective for the suppression of recombination between photogenerated electrons and holes. Graphene (GN) has unique properties such as a high value of Young's modulus, large theoretical specific surface area, excellent thermal conductivity, high mobility of charge carriers, and good optical transmittance. These excellent properties make GN an ideal building block in nanocomposites. It can act as an excellent electron-acceptor/transport material. Therefore, the morphology, structural characterization and crystal structure were observed using various analytical tools, such as X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. From this analysis, it is shown that CdS particles were well dispersed uniformly in the RGO sheet. Furthermore, the photocatalytic property of the resulting RGO-CdS composite is also discussed in relation to environmental applications such as the photocatalytic degradation of pollutants. It was found that the prepared RGO-CdS nanocomposites exhibited enhanced photocatalytic activity as compared with that of CdS nanoparticles. Therefore, better efficiency of photodegradation was found for water purification applications using RGO-CdS composite.

• Journal of Korean Medical classics
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• v.21 no.1
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• pp.183-203
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• 2008

"Uihakdokseogi(醫學讀書記)" is a casual work which mentions Ujaekyeong(尤在涇)'s thoughts on various problems found through extensive studying or in practice. The book does not focus on a single topic, thus the spectrum of the work is broad and is filled with problems which would interest most medical professionals. The major contents of the first volume of "Uihakdokseogi(醫學讀書記)" include differences of view on health preservation, the Five Circuit Phases[五運] and Six Atmospheric Influences[六氣], diseases, and the "Naegyeong(內經)", mentions on errors in transcription , and the gap between certain contents in "Yeongchu(靈樞)" and "Somun(素問)". U[尤在涇] asserts that Eum and Yang(陰陽) in a human should be in harmony as is the Gi(氣) of the sky and earth[天地] is, and that one should live according to the Gi(氣) of the four seasons to live a healthy life. He does not vary largely from the context of other writers on the matter of the Five Circuit Phases [五運] and Six Atmospheric Influences[六氣], and focuses on the concepts of predominant Gi[主氣], guest Gi[客氣], corresponding years[天符] , correlating years[歲會], and Taeeul corresponding years[太乙天符]. He mentions causes, symptoms, and treatments of various diseases such as cough due to asthenia of the viscera, stagnation of Yang(陽), stagnation of Eum(陰), abscess of the stomach, hard abscess of the intestines, upper emaciation, edema of the limbs, inability to raise the limbs, broken thigh, turbid fluid, inversion of Gi(氣) flow, sudden onset of fainting with cold extremities, diarrhea due to disorder of Gi(氣), and malaria. U[尤在涇] also points out faults of "Classic of Acupuncture and Moxibustion[甲乙經]" in the understanding of "Naegyeong(內經)".

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.271-281
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• 1992

Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Journal of Adhesion and Interface
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• v.13 no.4
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• pp.188-192
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• 2012

Herein, CdS-coated PMMA nanoparticles were prepared by in-situ surfactant-free emulsion copolymerization and subsequent CdS coating process. As-prepared CdS/PMMA hybrid particles had 201.7 nm in diameter. The amount of CdS nanocrystals in the hybrid particles was 10.37 wt% determined by TGA and elemental analysis. The size of CdS crystals was 3.55 nm preferentially grown in (111) plane. UV-vis spectrum of PMMA/CdS nanoparticles showed the significant blue-shift in optical illumination. The reason was found because the synthesized CdS nanocrystals on PMMA particles had a different band gap energy of 2.70 eV which was significantly higher than that of known-value of bulk CdS (2.41 eV) due to a quantum confinement effect.

• Korean Journal of Optics and Photonics
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• v.30 no.2
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• pp.48-58
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• 2019

We investigate the signal-to-noise ratios (SNRs) of time-domain (i.e. pulsed illumination) and frequency-domain (i.e. chirped illumination) photoacoustic signals measured by a spherically focused ultrasound transducer for spherical absorbers. The simulation results show that the time-domain photoacoustic SNR is higher than that of frequency-domain photoacoustic signals, as reported in the previous literature. We understand the reason for this SNR gap between the two measurement modes by analyzing photoacoustic-signal spectra, considering the incident beam energy controlled by the maximum permissible exposure. As the result of this approach, we find that filtering off the DC term in the chirped signal's spectrum improves frequency-domain photoacoustic SNRs by up to approximately 5 dB. In particular, it is observed that photoacoustic SNRs are highly sensitive to an upper-frequency value of frequency filtering functions, and the optimal upper-frequency values maximizing the SNR are different in time- and frequency-domain photoacoustic measurements.