• Progress in Medical Physics
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• v.23 no.1
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• pp.26-32
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• 2012

The magnification technique has recently become popular in bone radiography, mammography and other diagnostic examination. However, because of the finite size of X-ray focal spot, the magnification influences various imaging properties with resolution, noise and contrast. The purpose of study is to investigate the influence of magnification and focal spot size on digital imaging system using eDQE (effective detective quantum efficiency). Effective DQE is a metric reflecting overall system response including focal spot blur, magnification, scatter and grid response. The adult chest phantom employed in the Food and Drug Administration (FDA) was used to derive eDQE from eMTF (effective modulation transfer function), eNPS (effective noise power spectrum), scatter fraction and transmission fraction. According to results, spatial frequencies that eMTF is 10% with the magnification factor of 1.2, 1.4, 1.6, 1.8 and 2.0 are 2.76, 2.21, 1.78, 1.49 and 1.26 lp/mm respectively using small focal spot. The spatial frequencies that eMTF is 10% with the magnification factor of 1.2, 1.4, 1.6, 1.8 and 2.0 are 2.21, 1.66, 1.25, 0.93 and 0.73 lp/mm respectively using large focal spot. The eMTFs and eDQEs decreases with increasing magnification factor. Although there are no significant differences with focal spot size on eDQE (0), the eDQEs drops more sharply with large focal spot than small focal spot. The magnification imaging can enlarge the small size lesion and improve the contrast due to decrease of effective noise and scatter with air-gap effect. The enlargement of the image size can be helpful for visual detection of small image. However, focal spot blurring caused by finite size of focal spot shows more significant impact on spatial resolution than the improvement of other metrics resulted by magnification effect. Based on these results, appropriate magnification factor and focal spot size should be established to perform magnification imaging with digital radiography system.

• Economic and Environmental Geology
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• v.43 no.6
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• pp.625-636
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• 2010

The geophysical characteristics and geological structure of the northeastern part of the Ulleung Basin were investigated from interpretation of geophysical data including gravity, magnetic, bathymetry data, and seismic data. Relative correction was applied to reduce errors between sets of gravity and magnetic data, obtained at different times and by different equipments. The northeastern margin of the Ulleung Basin is characterized by complicated morphology consisting of volcanic islands (Ulleungdo and Dokdo), the Dokdo seamounts, and a deep pathway (Korea Gap) with the maximum depth of -2500 m. Free-air anomalies generally reflect the topography effect. There are high anomalies over the volcanic islands and the Dokdo seamounts. Except local anomalous zones of volcanic edifices, the gradual increasing of the Bouguer anomalies from the Oki Bank toward the Ulleung Basin and the Korea Gap is related to higher mantle level and denser crust in the central of the Ulleung Basin. Complicated magnetic anomalies in the study area occur over volcanic islands and seamounts. The power spectrum analysis of the Bouguer anomalies indicates that the depth to the averaged Moho discontinuity is -16.1 km. The inversion of the Bouguer anomaly shows that the Moho depth under the Korea Gap is about -16~17 km and the Moho depths towards the Oki Bank and the northwestern part of Ulleung Island are gradually deeper. The inversion result suggests that the crust of the Ulleung Basin is thicker than normal oceanic crusts. The result of 20 gravity modeling is in good agreement with the results of the power spectrum analysis and the inversion of the Bouguer anomaly. Except the volcanic edifices, the main pattern of magnetization distribution shows lineation in NE-SW. The inversion results, the 2D gravity modeling, and the magnetization distribution support possible NE-SW spreading of the Ulleung Basin proposed by other papers.

• Journal of the Korean Ceramic Society
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• v.41 no.8
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• pp.618-622
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• 2004

Excitation spectra of the 1.6 rm emission originating from $Ho^{3＋}$：$^{5}$ I$_{5}$ \longrightarrow$^{5}$ I$_{7}$ transition in fluoride, sulfide, and selenide glasses were measured at wavelengths around 900nm where the fluorescing $^{5}$ I$_{5}$ level is located. In specific energy range where the frequency upconversion populating $^{5}$ F$_{1}$ state happens, the excitation efficiency of the 1.6 fm emission was deteriorated in fluoride and sulfide hosts. In selenide however spectral line shapes of the excitation spectrum and the '$^{5}$ I$_{8}$ \longrightarrow$^{5}$ I$_{5}$ absorption spectrum looked seemingly identical to each other. Differences in optical nonlinearity as well as electronic band gap energy of the host glasses used are responsible for the experimental observations. On the other hand, codoping of rare earths such as Tb$^{3+}$, Dy$^{3+}$, Eu$^{3+}$, and Nd$^{3+}$ was effective in decreasint the terminating $^{5}$ I$_{7}$ level lifetime. However, at the same time, some of the codopants increased unnecessary absorption at the 1.6 $\mu$m wavelengths via their ground state absorption. Though the lifetime quenching effect of Eu$^{3+}$ was moderate, it exhibited no additional extrinsic absorption at the 1.6 $\mu$m band.EX>m band.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.372-375
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• 1988

The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.1
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• pp.42-42
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• 2012

The First stars (Pop.III stars) in the universe are expected to be formed between the recombination era at z - 1100 and the most distant quasar (z - 8). They have never been directly detected due to its faintness so far, but can be observed as a background radiation at around 1${\mu}m$ which is called the Cosmic Near-Infrared Background (CNB). Main part of the CNB is thought to be redshifted Lyman-alpha from gas clouds surrounding the Pop.III stars. Until now, the COBE (COsmic Background Explorer) and the IRTS (Infrared Telescope in Space) observed excess emission over the background due to galaxies. To confirm the COBE and the IRTS results and pursue more observational evidences, we carried out the sounding rocket experiment named the Cosmic Infrared Background ExpeRiment (CIBER). The CIBER is successfully launched on July 10, 2010 at White Sands Missile Range, New Mexico, USA. It consists of three kinds of instruments. We report the results obtained by LRS (Low Resolution Spectrometer) which is developed to fill the uncovered spectrum around 1${\mu}m$. LRS is a refractive telescope of 5.5 cm aperture with spectral resolution of 20 - 30 and wavelength coverage of 0.7 to 2.0${\mu}m$. After subtracting foreground components (zodiacal light, integrated star light and diffuse galactic light) from the sky brightness of observed five fields, there remained significant residual emission (even for the lower limit case) consistent with the IRTS and the COBE results. In addition, there exists a clear gap at 0.7 - 0.8${\mu}m$ in the CNB spectrum over the background due to galaxies according to recent results (Matsuoka et al. 2011; Mattila et al. 2011). The origin of the excess emission could be ascribed to the Pop.III stars with its active era of z = 7 - 10.

• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.2
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• pp.77-83
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• 2006

Ultrasonic nonlinearity has been considered as a solution for the detection of microcracks or interfacial delamination in a layered structure. The distinguished phenomenon in nonlinear ultrasonics is the generation of higher-order harmonic waves during the propagation. Therefore, in order to quantify the nonlinearity, the conventional method measures a parameter defined as the amplitude ratio of a second-order harmonic component and a fundamental frequency component included in the propagated ultrasonic wave signal. However, its application In field inspection is not easy at the present stage because no standard methodology has yet been made to accurately estimate this parameter. Thus, the aim of this paper is to propose an advanced signal processing technique for the precise estimation of a nonlinear ultrasonic parameter, which is based on power spectral and bispectral analysis. The method of estimating power spectrum and bispectrum of the pulse-like ultrasonic wave signal used in the commercial SAM (scanning acoustic microscopy) equipment is especially considered in this study The usefulness of the proposed method Is confirmed by experiments for a Newton ring with a continuous air gap between two glasses and a real semiconductor sample with local delaminations. The results show that the nonlinear parameter obtained tv the proposed method had a good correlation with the delamination.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.289-293
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• 2010

Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.714-721
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• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.134-141
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• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.