• Electronic Materials Letters
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• 제14권6호
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• pp.774-783
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• 2018

Full maximum-entropy mobility-spectrum analysis (FMEMSA) is the best algorithm among mobility spectrum analyses by which we can obtain a set of partial-conductivities associated with mobility values (mobility spectrum) by analyzing magnetic-field-dependent conductivity-tensors. However, it is restricted to a direct band-gap semiconductor and should be modified for materials with other band structures. We developed the modified version of FMEMSA which is appropriate for a material with a single anisotropic valley, or an indirect-band-gap semiconductor quantum-well with a single non-degenerate conduction-band valley e.g., (110)-oriented AlAs quantum wells with a single anisotropic valley. To demonstrate the reliability of the modified version, we applied it to several sets of synthetic measurement datasets. The results demonstrated that, unlike existing FMEMSA, the modified version could produce accurate mobility spectra of materials with a single anisotropic valley.

• ETRI Journal
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• 제18권3호
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• pp.181-193
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• 1996

A blue light emitting device has been successfully fabricated using a polymer with regulated conjugation length containing trimethylsilyl substituted phenylenevinylene units. Electroluminescence from the device has an emission maximum at 470 nm. The device shows typical diode characteristics with operating voltage of 20 V and the light becomes visible at a current density of less than $0.5;mA/cm^2$. The electroluminescence spectrum is virtually identical with the photoluminescence spectrum, indicating that the radiation mechanisms are the same for both. A light emitting device using the blend of a large band gap polymer and a small band gap polymer was also fabricated. Light emission from the small band gap polymer shows much improved quantum efficiency, but there is no light emission from the large band gap polymer. Quantum efficiency of the blend increases up to about two orders of magnitude greater than that of the small band gap polymer with increasing proportion of the large band gap polymer. The improvement in quantum efficiency is interpreted in terms of exciton transfer and the hole blocking behaviour of the large band gap polymer. Finally, we have fabricated a patterned flexible light emitting device using the high quantum efficiency polymer blend system.

• ETRI Journal
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• 제41권2호
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• pp.224-234
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• 2019

This paper proposes a new spectrum forecasting (SF) model to estimate the spectrum demands for future mobile broadband (MBB) services. The model requires five main input metrics, that is, the current available spectrum, site number growth, mobile data traffic growth, average network utilization, and spectrum efficiency growth. Using the proposed SF model, the future MBB spectrum demand for Malaysia in 2020 is forecasted based on the input market data of four major mobile telecommunication operators represented by A-D, which account for approximately 95% of the local mobile market share. Statistical data to generate the five input metrics were obtained from prominent agencies, such as the Malaysian Communications and Multimedia Commission, OpenSignal, Analysys Mason, GSMA, and Huawei. Our forecasting results indicate that by 2020, Malaysia would require approximately 307 MHz of additional spectrum to fulfill the enormous increase in mobile broadband data demands.

• 한국통신학회논문지
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• 제30권6A호
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• pp.499-509
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• 2005

위성 DMB (Digital Multimedia Broadcasting) 시스템은 도심 환경에서 위성으로부터의 감쇄된 신호를 증폭하기 위하여 별도의 수신신호 증폭을 위한 지상 중계기(Gap-filler)를 필요로 한다. 따라서 Gap-filler를 통해 증폭된 신호는 위성으로부터 직접 수신된 신호에 비하여 위성 DMB 시스템 간에 보다 더 큰 간섭을 야기한다. Gap-filler를 통해 발생된 위성 DMB 시스템 간의 간섭에 의해 위성 DMB 시스템의 Outage Capacity가 제한될 수 있기 때문에, 위성 DMB 시스템 간의 상호간섭 효과를 최소화 하여야 각 시스템의 기대 Outage Capacity를 얻을 수 있다. 본 논문에서는 ITU-R BO. 1130-4를 토대로, 보다 정확한 파라미터를 사용한 시스템 레벨 시뮬레이션을 통해 위성 DMB 시스템간의 상호간섭을 분석하고, 각 시스템의 Gap-filer에서 설정한 Spectrum Mask를 이용하여 간섭을 최소화하고 Outage Capacity를 극대화하기 위한 Gap-filler를 이용하는 위성 DMB 시스템간의 보호대역 및 적정 셀 반경을 제안한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.123-124
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• 2007

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the liteniture. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The temperature dependence of the energy band gap of the $AgInS_2$ obtained from the photocurrent spectrum was well described by the Varshni's relation, $E_g(T)=\;E_g(0)\;eV-(7.78\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;116\;K\;K)$. Also, Eg(0) is the energy band gap at 0 K, which is estimated to be 2.036 eV at the valence band state A and 2.186 eV at the valence band state B.

• 한국자기학회지
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• 제4권2호
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• pp.130-134
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• 1994

본 연구에서는 MIG 헤드의 재생 전압 스펙트럼에 나타나는 Bump들의 발생 원인을 설명하고, 이론적으로 예상된 주파수에서 Bump들의 진폭을 컴퓨터로 시뮬레이션 하였다. MIG 헤드의 센더스트와 페라이트 사이의 가상 갭(pseudo gap)이 없는 경우와 양쪽 모두 $0.02\;\mu\textrm{m},\;0.2\;\mu\textrm{m}$, 인 가상 갭을 갖는 3가지 종류의 MIG 헤드들을 설정하고, 금속 분말(Metal Powder) 테입을 사용한 것으로 가정하였다. 시뮬레이션 결과, 이론적으로 예상한 주파수에서 Bump들이 발생하였으며, Bump 진폭 또한 예상치와 거의 일치하였다.

• 전자공학회논문지D
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• 제34D권5호
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• pp.22-31
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• 1997

We have measured the optical properties, thickness, and energy band gap of the P $b_{1-x}$/100/L $a_{x}$100/ $Ti_{1-}$0.25x/100/ $O_{3}$ (PLT(x)) thin film prepared by the sol-gel method with varying the La concentration, x, fyom 15 nto 33 mol%. We have obtained the values from the tranmission spectrum and employed the envelope method in anayzing the spectrum. We have also performed the simulation of the transmission spectrum on the PC (personal computer) to verify the accuracy of the values 15 to 33mol%, the refractive index (at .lambda.=632.8nm) increases from 2.39 to 2.44. The extinction coefficient does not depend on the la concentration but mainly on te wavelength, and has the values between 0.2 and 0.5 at the wavelength shorter than 330nm and between 0.001 and 0.008 at the wavelength longer than 700nm. The energy band gap of the PLT (x) thin film has been obtained on the assumption of the direct band-to-band transition. It decreases from 3.28 to 3.17eV as the La concentration increases from 15 to 33 mol%. The thickness of the PLT(x) thin film has been also obtained in high accuracy by the envelope method..

• Bulletin of the Korean Chemical Society
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• 제22권5호
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• pp.439-440
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• 2001

• 한국음향학회:학술대회논문집
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• 한국음향학회 2001년도 추계학술발표대회 논문집 제20권 2호
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• pp.219-222
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• 2001

Nondestructive nonlinear acoustic method in two dimensions is suggested as a useful tool for detecting defects in a composite layer-structured material. Spectrum level changes in fundamental and harmonic frequencies are observed in the presence of a layer type defect compared with in the absence of such a defect. It is proposed in this study that such spectrum changes we due to the mode conversion. The layer type defect makes different normal modes due to different boundary conditions in the thickness direction for the Lamb waves propagating in a layer-structured material. Specifically, the normal mode with the fundamental frequency in the case of the water-layer gap is converted to the normal mode with the second harmonic frequency in the case of the air-layer gap.

• Journal of the Optical Society of Korea
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• 제15권2호
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• pp.118-123
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• 2011

A novel triangular-shaped plasmonic metal-insulator-metal (MIM) Bragg grating waveguide is introduced, whose band-gap is narrower than that of the conventional step type and wider than that of the sawtoothshaped one. Moreover apodized triangular-shaped MIM Bragg grating structures are proposed in order to reduce the side lobes of the transmission spectrum, because the Bragg reflector with a sawtooth profile has a smoother transmission spectrum than that of a triangular-shaped one. The performance of the proposed structures is simulated by using the finite difference time domain method.