• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2009.06a
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• pp.467-470
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• 2009

A novel 8 V DC power source with an external series-parallel connection of 50 Dye-Sensitized Solar Cells(DSSCs) has been proposed. One DSC has the optimized length to width ratio of $5.2{\times}2.6$ cm and an active area 8 $cm^2$($4.62{\times}1.73$ cm) which attained a conversion efficiency of 4.2%. From the electrochemical impedance spectroscopic analysis, it was found that the resistance elements related to the Pt electrode and electrolyte interface behave like that of diode and the series resistance corresponds to the sum of the other resistance elements. In addition, the TEMoo mode pulsed Nd:YAG laser beam is used to improve the incident photon to current efficiency(IPCE) of DSSC. From this result, this novel 8V-0.38A DC power source shows stable performance with an energy conversion efficiency of about 4.5% under 1 sun illumination(AM 1.5, Pin of 100 $mW/cm^2$).

• Journal of the Korean institute of surface engineering
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• v.45 no.3
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• pp.111-116
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• 2012

Oblique angle deposition (OAD) is a physical vapor deposition method which utilizes non-normal angles between the substrate and the vaporizing source. It has been known that tilting the substrate changes the properties of the film deposited on it, which was thought to be a result of morphological change of the film. In this study, OAD has been applied to prepare single and multilayer Al films by magnetron sputtering. The magnetron sputtering source of 4 inch diameter was used to deposit the films. Al films have been deposited on Si wafers and cold-rolled steel sheets. The multilayer films were prepared by changing the tilting angle upside down at each layer interval, which means that when the first layer was deposited at an angle of $+45^{\circ}$, the second layer was deposited at an angle of $-45^{\circ}$, and vice versa. The microstructure, surface roughness and reflectance of the films were investigated using a scanning electron microscope, a surface profiler and a spectrophotometer, respectively. The corrosion resistance was measured and compared using the salt spray test. The single layer film prepared at an oblique angle of $60^{\circ}$ prepared at other angles. However, for the multilayer films, the film prepared at an oblique angle of $45^{\circ}$ showed the most compact and featureless structure. The multilayer films were found to exhibit higher corrosion resistance than the single layer films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Journal of Welding and Joining
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• v.33 no.2
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• pp.18-22
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• 2015

The importance of emotional quality of car is getting higher in these days. Noise takes great portion in emotional quality because it is detectable problem with just a few rides. The sources of car noise during operation are various and the related technical issues are vast. Sometimes weldments of auto body are referred as the source of noise and the suspicious weldment shows unsatisfactory welding quality in most cases. In this research, cases of noise making weldments are investigated to figure out the solution for welding quality improvement. They are categorized into several groups in according to the inferred types of the error source then appropriate solutions are suggested. Auto body has weldments of resistance spot welding and gas metal arc welding in general. Therefore the solutions are suggested as adjustment of welding process variables and related machineries. Inevitable error source is also referred which is originated from thermal expansion rate difference between ultra high strength steel and mild steel. This new approach is validated through simple calculation then more concrete investigation with numerical analysis is remained as further works to be done.

• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.2
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• pp.24-33
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• 1971

A noble method of delta modulation by means of pair transistor circuit having negative resistance charcteristic is presented. An RC parallel circuit is inserted between two eiuitter tarminals of the pair transistor circuit, and their emitters are driven by a square pulsed current source. Basically this is a relaxation oscillator circuit. But when the value of capacitors and resistanc R, and the pulse height of driving source are properly chosen, the RC parallel circuit apparently functions as integrating circuit of driviving pulses. Compared with the integrated voltage of capacitor C, a signal input voltatage supplied in series with RC parallel circuit between two emitters makes on or off either of the pair transistors. as the result, one bit pulse is sent out from the coupling resistance terminal of conducted transistor. The circuit diagram used for this experiment is presented, it i% composed with simple mod ulster circuit, differential amplifier and pulse shaping amplifier, The characteristics of the components of this ciruit are discussed, and especially quantumized noise in this delta modulation system is discussed in order to improve the signal to noise ratio which has a close relation with circut constants, quantumized voltage, pulse height and width of driving current source.

• Journal of the Society of Naval Architects of Korea
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• v.34 no.2
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• pp.27-38
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• 1997

This paper is concerned with the calculation of the wave resistance for SWATH ships based on a low order Rankine source panel method. Two types of free surface boundary conditions, Dawson type (double model approximation) and Kelvin type (free stream approximation) are used. For the free surface boundary calculation, an analytic differentiation is employed instead of implementing a finite difference scheme. Then, the radiation condition is satisfied by, so called, the panel shift method. The numerical results using the above two methods are compared with those using the thin ship/modified slender body approximation and also with the experimental results. The SWATH models considered are a single strut SWATH and a twin strut SWATH together with the variations of two demihull separation distance. In order to prove the validity of the program developed, the numerical calculations for a Wigley mono hull and Wigley twin hulls are compared with the available experimental results.

• Fire Science and Engineering
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• v.17 no.4
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• pp.13-19
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• 2003

In this paper, we studied on the characteristics of RCD(Residual Current Device) case deteriorated by tracking, and compared the tracked samples between in the site of fire($S_1$) and in the reappearance experiment($E_1$). This experiment is applied to IEC Publ. 112 method. Electrical fire by tracking occurred after scintillation and dry-band generated. The insulation resistance between source terminals of RCD case was about 25.7Ω in $E_1$ and the resistance was about 58.6Ω in $S_1$.The exothermic peaks of $E_1$ appeared at $491.0^{\circ}C$ and $603.2^{\circ}C$. The exothermic peak at $603.2^{\circ}C$ was shown by tracking. And the exothermic peak of $S_1$ appeared at $593.1^{\circ}C$. In spectrum of $S_1$ and $E_1$, absorption peak didn't appear at near 1590 cm$^{-1}$ .

• Journal of the Society of Naval Architects of Korea
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• v.55 no.6
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• pp.490-496
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• 2018

The consistency of the initially designed waves in the domain is essential for accurate calculation of the added resistance in waves through CFD. In particular, unwanted reflected waves at domain boundaries can cause incorrect numerical solutions due to the superposition with initially designed waves. Euler Overlay Method(EOM) is one of the methods for reducing wave reflections by adding an additional source term to momentum and phase conservation equations, respectively. In this study, we apply the Euler Overlay Method(EOM) to the open-source CFD library, OpenFOAM(R), to simulate the accurate free-surface waves in the domain and the parametric study is performed for efficient implementation of Euler Overlay Method(EOM). Considering that the damping efficiency depends on the selection of the overlay parameter in the added source terms, the size of overlay zone and the wave steepness, the influences of these factors are tested through the wave elevation measured at constant time intervals in the 2D numerical wave tank. Through this process, guidelines for selection of optimal overlay parameter and overlay zone size that can be applied according to the scaling law are finally presented.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.3377-3382
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• 2007

In proton exchange membrane fuel cell, the heat is generated at the catalyst layer as result of exothermic electrochemical reaction. This heat increases temperature of gas diffusion layer and membrane whose conductivity is very sensitive to humidity, function of temperature. So it is very important to analysis heat transfer through fuel cell to maintain temperature at specified range. In this paper numerical simulation was done including reversible, irreversible, ionic resistance, water formation loss to source term of energy equation. Results show that irreversible and water formation loss contributes mainly to energy source term and as current density increases, all of energy source terms become increased and Nusselt number is increased as results of more heat generation. Particularly irreversible loss is found to be predominant among the all energy source and water formation at cathode channel influences the temperature distribution of fuel cell greatly.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1409-1418
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• 1990

Characteristics of NMOS transistors with phosphorus source/drain junctions formed by two-step rapid thermal diffusion (RTD) process using a solid diffusion source have been investigated. Phosphorus profiles after RTD were measured by SIMS analysis. In the case of 1100\ulcorner, 10sec RTD of, P, the specific contact resistance of n+ Si-Al was 2.4x10**-7 \ulcorner-cm\ulcorner which is 1/5 of the As junction The comparison fo P junction devices formed by RTD and conventional As junction devices shows that both short channel effect and hot carrier effect of P junction devices are smaller than those of As junction devices when the devices have same junction depths. P junction device had maximum of 0.4 times lower Isub/Id than As junction device. Characteristics of P junction formed by several different RTD conditions have been compared and 1000\ulcorner RTD sample had the smaller hot carrier generation. Also, it has been shown that the hot carrier generation can be futher reduced by forming the P junctions by 3-step RTD which has RTO-driven-in process additionally.