• The Plant Pathology Journal
• /
• v.38 no.6
• /
• pp.616-628
• /
• 2022

Resistance to pyraclostrobin due to a single nucleotide polymorphism at 143rd amino acid position on the cytochrome b gene has been a major source of concern in red pepper field infected by anthracnose in Korea. Therefore, this study investigated the response of 24 isolates of C. acutatum and C. gloeosporioides isolated from anthracnose infected red pepper fruits using agar dilution method and other molecular techniques such as cytochrome b gene sequencing, polymerase chain reaction-restriction fragment length polymorphism (PCR-RFLP), and allele-specific polymerase chain reaction (PCR). The result showed that four isolates were resistant to pyraclostrobin on agar dilution method and possessed GCT (alanine) codon at 143rd amino acid position, whereas the sensitive isolates possessed GGT (glycine). Furthermore, this study illustrated the difference in the cytochrome b gene structure of C. acutatum and C. gloeosporioides. The use of cDNA in this study suggested that the primer Cacytb-P2 can amplify the cytochrome b gene of both C. acutatum and C. gloeosporioides despite the presence of various introns in the cytochrome b gene structure of C. gloeosporioides. The use of allele-specific PCR and PCR-RFLP provided clear difference between the resistant and sensitive isolates. The application of molecular technique in the evaluation of the resistance status of anthracnose pathogen in red pepper provided rapid, reliable, and accurate results that can be helpful in the early adoption of fungicide-resistant management strategies for the strobilurins in the field.

• Journal of the Korean institute of surface engineering
• /
• v.46 no.4
• /
• pp.168-174
• /
• 2013

In this study, low-cost, high-speed deposition, excellent processability, high mechanical strength and electrical conductivity, chemical stability and corrosion resistance of stainless steel to meet the obsessive-compulsive (0.1 mm or less) were selected CrN thin film. new price reduction to sputter deposition causes - the possibility of sublimation source for inductively coupled plasma Cr rods were attempts by DC bias. 0.6 Pa Ar inductively coupled plasmas of 2.4 MHz, 500 W, keeping Cr Rod DC bias power 30 W (900 V, 0.02 A) is applied, $N_2$ flow rate of 0.5, 1.0, 1.5 sccm by varying the characteristics of were analyzed. $N_2$ flow rate increases, decreases and $Cr_2N$, CrN was found to increase. In addition to corrosion resistance and contact resistance, corrosion resistance, electrical conductivity was evaluated. corrosion current density than $N_2$ 0 sccm was sure to rise in all, $N_2$ 1 sccm at $4.390{\times}10^{-7}$ (at 0.6 V) $A{\cdot}cm^{-2}$, respectively. electrical conductivity process results when $N_2$ 1 sccm 28.8 $m{\Omega}/cm^2$ with the lowest value of the contact resistance was confirmed that came out. The OES (SQ-2000) and QMS (CPM-300) using a reactive deposition process to add $N_2$ to maintain a uniform deposition rate was confirmed that.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.51 no.1
• /
• pp.1-7
• /
• 2018

We investigated patterns of antimicrobial resistance in Escherichia coli isolated from the water discharged from inland pollution sources in the Hansan-Geojeman and Jaranman-Saryangdo areas of Korea. A total of 217 strains of E. coli were isolated from 23 point-sources. These strains were tested for their susceptibility to 16 antimicrobial agents used in Korea for medical or veterinary therapy. The highest level of antibiotic resistance among the isolated strains was to tetracycline 10.6%, followed by ampicillin (3.2%), nalidixic acid (2.8%), rifampin (1.8%), trimethoprim (1.8%), trimethoprim/sulfamethoxazole (1.8%), chloramphenicol (1.4%), streptomycin (1.4%), cephalothin (0.5%) and gentamicin (0.5%). Resistance to at least one antimicrobial agent was present in 17.1% of the E. coli isolates. Only four of the isolated strains of E. coli showed multiple antibiotic resistance, which is defined as resistance to more than four antibiotics.

• Animal Bioscience
• /
• v.34 no.4
• /
• pp.734-742
• /
• 2021

Objective: The present study aimed to investigate the occurrence and species of coagulase-positive staphylococci (CoPS) and coagulase-negative staphylococci (CoNS) in retail pork meat samples collected during nationwide monitoring. The staphylococcal isolates were characterized for antimicrobial and zinc chloride resistance and enterotoxigenic potential. Methods: A total of 260 pre-packaged pork meat samples were collected from 35 retail markets in 8 provinces in Korea for isolation of staphylococci. Antimicrobial and zinc chloride resistance phenotypes, and genes associated with the resistance phenotypes were determined on the isolates. Furthermore, the presence and distribution of 19 staphylococcal enterotoxin (SE) genes and enterotoxin-like genes among the pork-associated staphylococci were determined by multiplex polymerase chain reaction-based assays using the specific primer sets. Results: A total of 29 staphylococcal strains (29/260, 11.1%) were isolated from samples of retail pork meat, 24 (83%) of which were CoNS. The four CoNS species identified were S. saprophyticus (n = 16, 55%), S. sciuri (n = 3, 10%), S. warneri (n = 3, 10%), and S. epidermidis (n = 2, 7%). Among the 29 isolates, four methicillin-resistant CoNS (MR-CoNS; three S. sciuri and one S. epidermidis) and one methicillin-resistant CoPS (MR-CoPS; one S. aureus) were identified. In addition, a relatively high level of tetracycline (TET) resistance (52%) was confirmed in CoNS, along with a predominant distribution of tet(K). The most prevalent SEs were sep (45%), and sen (28%), which were carried by 81% of S. saprophyticus. Conclusion: These findings suggest that CoNS, especially S. saprophyticus strains, in raw pork meat could be a potential risk factor for staphylococcal food poisoning (SFP), and therefore, requires further investigation to elucidate the role of SEls in SFP and virulence of the pathogen. Our results also suggest that CoNS from raw pork meat may act as a source for transmission of antimicrobial resistance genes such as staphylococcal cassette chromosome mec and tet(K).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.133-133
• /
• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

• Journal of Navigation and Port Research
• /
• v.37 no.1
• /
• pp.1-7
• /
• 2013

In this paper the developed prediction technique of wave-making resistance performance for a ship attached with a vertical blade had been verified. Numerical analysis program as a prediction technique had been developed using the Rankine source panel method and the vortex lattice method(VLM). The nonlinearity of the free surface conditions was fully taken into account using the iterative method and the trim and the sinkage of the ship were also considered in the numerical analysis program. Panel cutting method was applied to get hull surface panels. Numerical computations were carried out for a 4000TEU container carrier and the vertical blade was attached 6 different locations astern. To investigate the validity of the numerical analysis program the commercial viscous flow field analysis program FLUENT was used to obtain the viscous flow field around the ship and the model test was performed. The model test results were compared with the numerical analysis results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.4
• /
• pp.257-261
• /
• 2014

Carbon nanotubes (CNT) has the excellent physical characteristics in the sensor, medicine, manufacturing and energy fields, and it has been studied in those fields for the several years. We fabricated the NOx gas sensors of MOS-FET type using the MWCNT. The fabricated sensor was used to detect the NOx gas for the variation of $V_{gs}$ (gate-source voltage) with the ambient temperature. The gas sensor absorbed the NOx gas molecules showed the decrease of resistance, and the sensitivity of sensor was reduced by the NOx gas molecules accumulated on the MWCNT surface. Furthermore, when the voltage ($V_{gs}$) was applied to the gas sensor, the term of the decrease in resistance was increased. On the other hand, the sensor sensitivity for the injection of NOx gas was the highest value at the ambient temperature of $40^{\circ}C$. We also obtained the adsorption energy ($40^{\circ}C$) using the Arrhenius plots by the reduction of resistance due to the $V_{gs}$ voltage variations. As a result, we obtained that the adsorption energy also was increased with the increasement of the applied $V_{gs}$ voltages.

• Journal of Satellite, Information and Communications
• /
• v.7 no.3
• /
• pp.135-139
• /
• 2012

A digital controller can simply realize a complex operation algorithm and power control process which can not be applied by an analog circuit for a solar array regulator(SAR). The digital resistive control(DRC) makes an equivalent input impedance of the SAR be resistive characteristic. The resistance of the solar array varies largely in a voltage source region and slightly in a current source region. Therefore when the solar array regulator is controlled by the DRC, the Advanced Incremental Conductance MPPT Algorithm with a Variable Step Size(AIC-MPPT-VSS) is suitable. The AIC-MPPT-VSS, however, using small signal resistance and large signal resistance of the solar array can not limit the absolute value of the solar array power. In this paper, the solar array power limiter is suggested and the BUCK-BOOST type SAR which is fully controlled by the digital controller is verified by simulation.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1246-1247
• /
• 2008

With recent advanced in portable electric devices, wireless sensor, MEMS and bio-Mechanics device, the new typed power supply, not conventional battery but self-powered energy source is needed. Particularly, the system that harvests from their environments are interests for use in self powered devices. For very low powered devices, environmental energy may be enough to use power source. Therefore, in other to made piezoelectric energy harvesting device, PMN-PZT thick film was formed by the screen printing method on the Ag/Pd coated alumina substrate. The layer was 8 layers and slurry where a-terpineol, ethycellulose, ferro B-75001 as Vehicle, PMN-PZT powder used are fabricated by ball mill. The output power quality was be also investigated by changing the load resistance, weight and frequency. The made piezoelectric energy harvesting device was resulted from the conditions of 33$k{\Omega}$, 0.25g, 197Hz respectively. The thick film was prepared at the condition of 2.75Vrms, and its power was 230${\mu} W$ and its thickness was 56${mu}m$. The piezoelectric energy harvesting device output voltage was increased, when the load weight, load resistance was increasing and resonance frequency was diminishing. The other side, resonance frequency was diminished, when the weight was increasing. And output power was continuously it changed by load resistance, output voltage, weight and resonance frequency.

• Journal of IKEEE
• /
• v.24 no.1
• /
• pp.284-292
• /
• 2020

SiC-based devices perform well in high-voltage environments of more than 1200V compared to silicon devices, and are particularly stable at very high temperatures. Therefore, 1700V UMOSFET has been actively researched and developed for the use of electric power systems such as electric vehicles and aircrafts. In this paper, we analysed thermal variations of critical variables (breakdown voltage (BV), on-resistance (R_on), threshold voltage (v_th), and transconductance (g_m)) for the three type 1700V UMOSFETs-Conventional UMOSFET (C-UMOSFET), Source Trench UMOSFET (ST-UMOSFET), and Local Floating Superjunction UMOSFET (LFS-UMOSFET). All three devices showed BV increase, R_on increase, v_th decrease, and g_m decrease with increasing temperature. However, there are differences in BV, R_on, v_th, g_m according to the structural differences of the three devices, and the degree and cause of the analysis were compared. All results were simulated using sentaurus TCAD.