• 제목/요약/키워드: source resistance

검색결과 1,031건 처리시간 0.032초

하천에서 tetQ와 aacC2 유전자의 분포 양상 (Distributional Pattern of tetQ and aacC2 genes in Stream Water)

  • 정재성;이영종;김종홍
    • The Korean Journal of Ecology
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    • 제22권5호
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    • pp.305-309
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    • 1999
  • 하천에서 tetracycline과 gentamicin 저항성 유전자인 tetQ와 aacC2의 분포를 알아보기 위해 순천지역의 하천수로부터 전체 세균군집의 DNA를 분석하였다. 배양되지 않는 세균의 저항성을 고려하여 1liter의 하천수에 들어 있는 전체 세균의 DNA를 freeze-thaw 방법으로 추출하여 PCR을 통해 표적 유전자의 출현 정도를 조사하였다. 그 결과 tetQ 유전자는 축산농장이 있는 제 1지점에서 가장 많은 것으로 나타난데 반해 aacC2 유전자는 하천의 하류인 제5지점에서 가장 많이 출현하였다. 이러한 결과는 항생물질 저항성 유전자가 수질의 오염원을 알 수 있는 표지로 사용될 수 있는 가능성을 시사한다.

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열원 냉각용 루프 써모사이폰의 작동 특성 (Performance Characteristics of a Loop Thermosyphon for Heat Source Cooling)

  • 최두성;송태호
    • 대한기계학회논문집B
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    • 제28권12호
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    • pp.1475-1483
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    • 2004
  • Loop thermosyphon(LTS) has many good characteristics such as low thermal resistance, no power consumption, noiseless operation and small size. To investigate the overall performance of LTS, we have performed various experiments varying three parameters: input power of the heater, working fluid(water, ethanol, FC3283) and filling ratio of the working fluid. At a combination of these parameters, temperature measurements are made at many locations of the LTS. The temperature difference between the evaporator and the condenser is used to obtain the thermal resistance. In addition, flow visualization using a high speed camera is carried out. The thermal resistance is not constant. It is lower at higher input power, which is one of the distinct merits of LTS. Flow instabilities are frequently observed when changing the working fluid, the input power and the filling ratio. The results show that the LTS can be readily put into practical use. Future practical application in electronic cooling is recommended.

Resistance to Anthracnose Caused by Colletotrichum acutatum in Chili Pepper(Capsicum annuum L.)

  • Kim, Sang-Hoon;Yoon, Jae-Bok;Do, Jae-Wahng;Park, Hyo-Guen
    • Journal of Crop Science and Biotechnology
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    • 제10권4호
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    • pp.277-280
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    • 2007
  • Pepper fruit anthracnose, caused by Colletotrichum acutatum, results in serious yield loss and affects crop quality in many Asian countries, making it a disease of economic consequence. A source resistant to C. acutatum was identified by the AVRDC within the line Capsicum chinense Jacq. PBC932. The resistant breeding line C. annuum AR is the $BC_3F_6$ generation derived from C. chinense Jacq. PBC932. The inheritance of resistance to C. acutatum was analyzed in segregating populations derived from the two crosses HN 11$\times$AR and Daepoong-cho$\times$AR. Detached mature green fruits were inoculated using microinjection method. The disease response was evaluated as the disease incidence at 7 DAI. The segregation ratios of resistance and susceptibility to C. acutatum in the $F_2$ and $BC_R$ populations derived from the two crosses fit significantly to a 1:3 Mendelian model. This indicates that the resistance of AR to C. acutatum is controlled by a single recessive gene.

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Polyvinylchloride에 있어 가소제의 첨가가 유기안정제의 내 방사성 및 유전, 기계적 특성에 미치는 영향 (Effects of Plasticizer to Polyvinylchloride on Radio-resistance of Organic Stabilizer,Dielectric and Mechanical Characteristics under the Influence of Radiation)

  • 김봉흡;강도열;이재인
    • 전기의세계
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    • 제26권2호
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    • pp.89-94
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    • 1977
  • In order to investigate the properties of radiation resistance together with dielectric, and mechanical relaxation behaviors of polyvinylcholoride exposed to several different doses under the .gamma.-ray of Co$^{60}$ source, several observations were carried out on the exposed specimens propared by mixing dibutyl-tin-dilaulate and dibutyl-tin-dimaleate as stabilizer with or without adding dioctyl-phthalate as plasticizer. Conclusions obtained from the study are as follows: The origin of the absorption band at 1,540-1,640$cm^{-1}$ / on I.R. spectrum seems to be RCOO- ion originated from ionization of the stabilizer, and this peak can be useful as a measure of radiation resistance on polyvinylchloride. Addition of increasing plasticizer to polyvinylchloride exhibits increasing radiation resistance and the reason for this result may be attributed to aromatic resonance absorption of radiation energy by diotylphthalate. On dose dependent dielectric characteristics, nonplastized specimen shows a peak at about 10 Mrad and that this peak disappears on the plastification of specimens. Those phenomena may be explainable in considering the statistical distribution of scissored chain molecular segments as well as the plastification process of plasticizer to polyvinylchloride chain molecules.

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지중 열교환기 보어홀에서의 유효 열전도도 및 열저항 산정 (Evaluation of Effective Thermal Conductivity and Thermal Resistance in Ground Heat Exchanger Boreholes)

  • 손병후;신현준;박성구
    • 설비공학논문집
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    • 제17권8호
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    • pp.695-703
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    • 2005
  • The objective of this study is to determine the effective thermal conductivity and thermal resistance values in test boreholes with three different fill materials. To evaluate these heat transfer properties, in-situ tests on four vertical boreholes were conducted by adding a monitored amount of heat to water over various test lengths. Two parameter estimation models, line-source and numerical one-dimensional models, for evaluation of thermal response test data were compared when applied on the same four data sets. Results show that the average thermal conductivity deviation between measured data and these two models is in the range of $3.03\%$ to $4.45\%$. The effect of increasing grout thermal conductivity from 1.34 to 1.82 $W/m^{\circ}C$ resulted in overall increases in effective formation thermal conductivity by $11.1\%$ to $51.9\%$ and reductions in borehole thermal resistance by $11.6\%$ to $26.1\%$.

A Study of Properties of 3C-SiC Films deposited by LPCVD with Different Films Thickness

  • Noh, Sang-Soo;Seo, Jeong-Hwan;Lee, Eung-Ahn
    • Transactions on Electrical and Electronic Materials
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    • 제9권3호
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    • pp.101-104
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    • 2008
  • The electrical properties and microstructure of nitrogen-doped poly 3C-SiC films were studied according to different thickness. Poly 3C-SiC films were deposited by LPCVD(low pressure chemical vapor deposition) at $900^{\circ}C$ and 4 Torr using $SiH_2Cl_2$ (100 %, 35 sccm) and $C_2H_2$ (5 % in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5 % in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the 3C-SiC films with $1,530{\AA}$ of thickness was $32.7{\Omega}-cm$ and decreased to $0.0129{\Omega}-cm$ at $16,963{\AA}$. In XRD spectra, 3C-SiC is so highly oriented along the (1 1 1) plane at $2{\theta}=35.7^{\circ}$ that other peaks corresponding to SiC orientations are not presented. The measurement of resistance variations according to different thickness were carried out in the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of resistance variation decreases with increasing the films thickness, the linearity of resistance variation improved.

몰리브덴이 첨가된 이산화바나듐으로 표면처리한 탄소계 전도성판의 전기저항특성 (Electrical Resistance of Mo-doped $VO_2$ Films Coated on Graphite Conductive Plates by a Sol-gel Method)

  • 최원규;정혜미;이종현;임세준;엄석기
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회B
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    • pp.2007-2010
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    • 2008
  • Vanadium pentoxide ($V_2O_5$) powder was prepared and mixed with Molybdenum Oxides ($MoM_3$) to form Mo-doped and -undoped $VO_2$ films by a sol-gel method on graphite conductive substrates. X-Ray diffraction (XRD) and scanning electron microscopy (SEM) was used to investigate the chemical compositions and microstructures of the Mo-doped and -undoped $VO_2$ films. The variation of electrical resistance was measured as a function of temperature and stoichiometric composition between vanadium and molybdenum. In this study, it was found that Mo-doped and -undoped $VO_2$ shows the typical negative temperature coefficient (NTC) behavior. As the amount of the molybdenum increases, the electrical resistance of Modoped $VO_2$ film gets reduced under the transition temperature and a linear decrease in the transition temperature is observed. From these experimental results, we can conclude that the electrical resistance behavior with temperature change of $VO_2$ films can be utilized as a self-heating source with the electrical current flowing through the graphite substrate.

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지중열교환기 설치 조건이 지중 유효 열전도도와 보어홀 열저항에 미치는 영향 (The Effects of the Installation Conditions of Ground Loop Heat Exchanger to the Thermal Conductivity and Borehole Resistance)

  • 임효재;공형진;강성재;최재호
    • 설비공학논문집
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    • 제23권2호
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    • pp.95-102
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    • 2011
  • A ground loop heat exchanger in a ground source heat pump system is an important unit that determines the thermal performance of a system and its initial cost. A proper design requires certain site specific parameters, most importantly the ground effective thermal conductivity, the borehole thermal resistance and the undisturbed ground temperature. This study was performed to investigate the effect of some parameters such as borehole lengths, various grouting materials and U tube configurations on ground effective thermal conductivity and borehole thermal resistance. In this study, thermal response tests were conducted using a testing device to 9 different ground loop heat exchangers. From the experimental results, the length of ground loop heat exchanger affects to the effective thermal conductivity. The results of this experiment shows that higher thermal conductivity of grouting materials leads to the increase effective thermal conductivity from 22 to 32%. Also, mounting spacers have increased by 14%.

스위치의 선형영역을 이용한 무효전력보상기의 돌입전류 억제 방안 (Inrush Current Suppression Method of the Reactive Power Compensator by using a Linear Region of the Switch)

  • 박성미;강성현;박성준
    • 조명전기설비학회논문지
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    • 제27권3호
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    • pp.55-64
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    • 2013
  • In this paper, a new topology which can add a small reactor in series to a condenser-bank type reactive power compensator to limit current is proposed. And also the proposed topology can add or remove a power condenser safely without any addition of inrush-current suppression resistance. The proposed method tests variable resistance of the drain source of a switching device which is controlled by gate voltage in a two-way switch with a diode rectifier and FET switch. In other words, the proposed method is a inrush-current suppression method with the structure of variable resistance. In particular, the proposed method creates smooth current without any resonance in inrush-current as well as is not limited by the time of switch on and off.

결정질 실리콘 태양전지에 적용하기 위한 Dopant Pastes의 n+ emitter 특성 분석 (Analysis of n+ emitter properties using Dopant Pastes for Crystalline Silicon Solar Cells)

  • 이지훈;조경연;최준영;이수홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.15-16
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    • 2007
  • The high efficiency and low cost solar cells in order to it applied a dopant pastes diffusion process. The dopant pastes diffusion process which it uses is easily applied in screen-printing solar cells output line. in this paper, it used the Ferro 99-038 phosphorus diffusion pastes source and it analyzed a sheet resistance and a uniformity degree. And it knew the quality of the sheet resistance which it follows in temperature and time condition. The temperature variable it let and it fixed the time in 7 minutes. It will be able to measure the sheet resistance of $40({\Omega}/sq),\;30({\Omega}/sq),\; 20({\Omega}/sq)$. also average uniformity of the sheet resistance was below 5%.

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