• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.481-482
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• 2006

We fabricated pentacene organic thin film transistor with good uniformity. And we extracted contact resistance in organic thin film transistors from the plot of the inverse of drain current versus channel length by extrapolating the curve to a channel length of zero, and multiplying by drain-source voltage. Extracted contact resistance is about $70K{\Omega}$ at gate-drain voltage of -20 V

• ETRI Journal
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• 제37권5호
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• pp.951-960
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• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.55-59
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• 1993

In this study, we developed new process for doping poly-Si film. Sb(antimony) thin film was used as doping source. Sb was evaporated on poly-Si film deposited by LPCVD fallowed by annealing. We investigate sheet resistance variation with annealing temperature and time. Finally we adapted this process to poly-Si TFT fabrication.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 통신소사이어티 추계학술대회논문집
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• pp.309-312
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• 2003

In this study, the electrical characteristic of Symmetric high voltage MOSFET (SHVMOSFET) for display driver IC were investigated. Measurement data are taken over range of temperature (300K-400K) and various extended drain length. In high temperature condition(>400K), drain current decreased over 20％, and specific on-resistance increased over 30％ in comparison with room temperature.

• E2M - 전기 전자와 첨단 소재
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• 제6권3호
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• pp.214-219
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• 1993

고온에서 실리콘에 인을 확산시키기 위한 새로운 고체 판상 원료를 개발하였다. Source Wafer는 거품 형태의 골결을 지닌 불활성 재료에 Yttrium metaphosphate가 들어있는 구조로 되어있다. 새로운 고체 판상 원료를 사용하여 고온에서 인을 확산시켜서 재현 가능한 Sheet resistance와 깊은 Junction을 얻었다. 일련의 한 시간 도핑 결과들로부터 새로운 고체 판상 원료의 수명은 40시간 이상인 것으로 판명되었다. 1150.deg.C에서 인의 실리콘에로의 확산에 대한 유효 확산계수와 대응되는 활성화 에너지의 값을 구하였다.

• 한국수산과학회지
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• 제54권4호
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• pp.388-396
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• 2021

Antimicrobial resistance patterns of Escherichia coli were investigated. Strains were isolated from 310 shellfish, 36 crustaceans, and 12 fish collected off the West Coast of Korea from April 2019 to October 2020. Two hundred and ninety-five E. coli strains were isolated from shellfish, 100 from crustaceans, and 54 from fish. Strains isolated from shellfish showed the highest resistance to ampicillin (27.5%), whereas those from crustaceans were resistant to sulfisoxazole (30.0%) and those from fish were resistant to ampicillin (59.3%) and sulfisoxazole (59.3%). Ceftazidime resistance was observed in strains isolated from short neck and hard clams, whereas gentamicin resistance was observed in strains from fish. Multi-drug resistance was observed in 56 strains (48.7%) isolated from shellfish, 11 (28.2%) from crustaceans and 27 (73.0%) from fish. Depending on the source of isolation, the strains showed specific antimicrobial resistance tendency. Strains isolated from shellfish showed 12 different multi-drug resistance patterns, whereas those from crustaceans showed high resistance (59%) to a single antimicrobial agent and those from fish showed a broad trend of multi-drug resistance to more than eight antimicrobials.

• 한국안전학회지
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• 제17권3호
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• pp.61-65
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• 2002

A study on the characteristics of electric shock in fresh water due to the leakage of submerged electric facility is conducted by using a reduced scale model at a scale of 1:10 in laboratory. Electric potential as a function of distance from leakage source, type of the leakage source, magnitude of the source voltage, submerged depth and diameter of a copper rod electrode is measured. On the basis of safety standard, separation for guarantee of safety is determined by the measured potential. Also supposing that body resistance is 500［$\Omega$］, the human reaction was estimated by calculating body current for some shock duration. Thus, in this paper, the hazard of the electric shock is assessed by introducing representative safety factors, body voltage and body current due to leakage source.

• Journal of Mechanical Science and Technology
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• 제18권4호
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• pp.681-688
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• 2004

For use of the thermal cycle of the biochemical fluid sample, the isothermal temperature source with a large surface area was designed, fabricated and its thermal characterization was experimentally evaluated. The comprehensive overview of the technology trend on the temperature control devices was detailed. The large surface area isothermal temperature source was realized by using the vapor chamber heat spreader. The cost-effectiveness and simple manufacturing process were achieved by using the metal-etched wick structure. The temperature distribution was quantitatively investigated by using IR temperature imaging system at equivalent temperatures to the PCR thermal cycle. The standard deviation was measured to be within 0.7$^{\circ}C$ for each temperature cycle. This concludes that the presented isothermal temperature source enables no temperature gradient inside bio-sample fluid. Furthermore it can be applied to the cooling of the electronic devices due to its slimness and low thermal spreading resistance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1451-1453
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• 2001

An SOI(Silicon-On-Insulator) LD(Lateral Double-diffused)MOS with graded gate and recessed source is proposed. The proposed structure can increase the breakdown voltage by reducing the electric field crowding at the edge of gate. Simulation results by TSUPREM4 and MEDICI have shown that the breakdown voltage of proposed device was found to be 52 V while that of conventional device was 45 V. At the same breakdown voltage of 45 V, the on-resistance of the LDMOS with graded gate and recessed source was 14.4 % lower than that of conventional structure.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.110.2-110.2
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• 2012

We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.