• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1995년도 추계 학술발표 강연 및 논문개요집
• /
• pp.87-87
• /
• 1995

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 1999년도 추계학술발표회 초록집
• /
• pp.34-35
• /
• 1999

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제17권2호
• /
• pp.239-244
• /
• 2017

We experimentally investigate the physical mechanism for asymmetrical degradation in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under simultaneous gate and drain bias stresses. The transfer curves exhibit an asymmetrical negative shift after the application of gate-to-source ($V_{GS}$) and drain-to-source ($V_{DS}$) bias stresses of ($V_{GS}=24V$, $V_{DS}=15.9V$) and ($V_{GS}=22V$, $V_{DS}=20V$), but the asymmetrical degradation is more significant after the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20 V) nevertheless the vertical electric field at the source is higher under the bias stress ($V_{GS}$, $V_{DS}$) of (24 V, 15.9 V) than (22 V, 20 V). By using the modified external load resistance method, we extract the source contact resistance ($R_S$) and the voltage drop at $R_S$ ($V_{S,\;drop}$) in the fabricated a-IGZO TFT under both bias stresses. A significantly higher RS and $V_{S,\;drop}$ are extracted under the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20V) than (24 V, 15.9 V), which implies that the high horizontal electric field across the source contact due to the large voltage drop at the reverse biased Schottky junction is the dominant physical mechanism causing the asymmetrical degradation of a-IGZO TFTs under simultaneous gate and drain bias stresses.

• Journal of Animal Science and Technology
• /
• 제62권4호
• /
• pp.543-552
• /
• 2020

For efficient prevention and treatment of enteric colibacillosis, understanding about latest virulence factors and antimicrobial resistance of Escherichia coli is essentially needed. The aim of this study was to survey antimicrobial resistance and determine the prevalence of fimbriae and enterotoxin genes among 118 pathogenic E. coli isolates obtained from Korean pigs with diarrhea between 2016 and 2017. The genes for the toxins and adhesins were amplified by polymerase chain reaction (PCR). The susceptibility of the E. coli isolates to antimicrobials were tested using the standard Kirby-Bauer disk diffusion method. The most prevalent fimbrial antigen was F18 (40.7%), followed by F4 (16.9%), and the most prevalent combinations of toxin genes were Stx2e (21.2%), STb:EAST-1 (19.5%), and STa:STb (16.9%), respectively. Among the pathotypes, enterotoxigenic E. coli (ETEC) was the most predominant (67.8%), followed by Shiga-toxin producing E. coli (STEC, 23.7%). We confirmed high resistance rates to chloramphenicol (88.1%), tetracycline (86.4%), streptomycin (86.4%), and ampicillin (86.4%). And the majorities of isolates (90.7%) showed multi-drug resistance which means having resistance to 3 or more subclasses of antimicrobials. Results of this study can be a source of valuable data for investigating the epidemiology of and control measures for enteric colibacillosis in Korean piggeries.

• 전기학회논문지
• /
• 제60권5호
• /
• pp.1068-1072
• /
• 2011

Hydrogen Fuel Cell Vehicle(HFCV) is system that uses electrical energy of fuel cell stack to main power source, which is different system with other vehicles that use high-voltage, large-current. Isolation performance of this system which is connected with electrical fire and electrical shock is important point. Isolation resistance of electric installation is divided according to working voltage, it follows criterion more than $100{\Omega}$/VDC (or $500{\Omega}$/VAC) about system operation voltage in a hydrogen fuel cell vehicle. Although measurement of isolation resistance in a hydrogen fuel cell vehicle is two methods, it uses mainly measurement by megger. However, the present isolation resistance measurement system that is optimized to use in electrical facilities is unsuitable for isolation performance estimation of a hydrogen fuel cell vehicle because of limit of maximum short current and difference of measurement resolution. Therefore, this research developed the isolation resistance measurement system so that may be suitable in isolation performance estimation of a hydrogen fuel cell vehicle, verified isolation performance about known resistance by performance verification of laboratory level about developed system, and executed performance verification through comparing results of developed system by performance verification of vehicle level with ones of existing megger. Developed system is judged to aid estimation and upgrade of isolation performance in a hydrogen fuel cell vehicle hereafter.

• 한국작물학회지
• /
• 제47권4호
• /
• pp.319-322
• /
• 2002

Soybean cyst nematode (Heterodera glycines Ichinohe; SCN) is an important soybean pest and the use of resistant cultivars is the effective method to reduce or eliminate SCN damage. However, breeding for SCN resistance is difficult and expensive by the oligogenic nature of the resistance and genetic variability in the pathogen. Fortunately, SCN resistance loci, rhg1 and Rhg4 are generally accepted as a necessity for the development of resistant genotypes using any source of resistance. In this study, resistance of 44 Korean soybean cultivars to SCN was tested using two molecular markers. Seonheukkong and Pokwangkong were the homozygous to rhg1 locus. Seven cultivars were susceptible to SCN based on Satt309 marker linked rhg1 locus. All Korean cultivars estimated in this study were recessive homozygous to Rhg4 locus and were susceptible in the PCR reaction using primer 548/563 linked to the Rhg4 locus conferring resistance to SCN race 3. Among 44 cultivars estimated, seven cultivars were susceptible to SCN in both Satt309 and primer 548/563 markers. Based on both Satt309 and primer 548/563 markers, there is no resistant cultivar to SCN in Korea. Therefore, SCN resistant cultivars need to be developed in the future. These two markers can be used for improving SCN resistant cultivars.

• The Plant Pathology Journal
• /
• 제37권1호
• /
• pp.1-23
• /
• 2021

Resistance to diseases caused by turnip mosaic virus (TuMV) in crop species of the family Brassicaceae has been studied extensively, especially in members of the genus Brassica. The variation in response observed on resistant and susceptible plants inoculated with different isolates of TuMV is due to a combination of the variation in the plant resistome and the variation in the virus genome. Here, we review the breadth of this variation, both at the level of variation in TuMV sequences, with one eye towards the phylogeny and evolution of the virus, and another eye towards the nature of the various responses observed in susceptible vs. different types of resistance responses. The analyses of the viral genomes allowed comparisons of pathotyped viruses on particular indicator hosts to produce clusters of host types, while the inclusion of phylogeny data and geographic location allowed the formation of the host/geographic cluster groups, the derivation of both of which are presented here. Various studies on resistance determination in particular brassica crops sometimes led to further genetic studies, in many cases to include the mapping of genes, and in some cases to the actual identification of the genes. In addition to summarizing the results from such studies done in brassica crops, as well as in radish and Arabidopsis (the latter as a potential source of candidate genes for brassica and radish), we also summarize work done using nonconventional approaches to obtaining resistance to TuMV.

• 한국광학회지
• /
• 제26권3호
• /
• pp.168-171
• /
• 2015

고출력 반도체 광원의 열유동 특성을 분석하고, 열전달 병목지점을 파악하여 열저항을 개선하는 방안을 도출하고, 전산모사를 통하여 개선 효과를 확인하였다. 띠구조 활성층을 가진 LD 광원의 경우에 발열부의 부피가 작을 뿐 아니라 발열면적이 좁아서 발열부 근처의 열전달 유효단면적이 매우 좁을 수 밖에 없는데, 이 부근의 경계면에 그래핀층을 추가적으로 적용하면 전체 열저항이 확연히 개선되는 것이 전산모사 되었다. 이는 열전달 경로상의 유효단면적이 넓어지는 효과를 가져와 전체 열저항이 확연히 개선되는 것으로 파악되었다.

• 조명전기설비학회논문지
• /
• 제27권6호
• /
• pp.95-99
• /
• 2013

Furnace is currently the most important doping process using POCl3 in solar cell. However furnace need an expensive equipment cost and it has to purge a poisonous gas. Moreover, furnace typically difficult appling for selective emitters. In this study, we developed a new atmospheric pressure plasma source, in this procedure, we research the atmospheric pressure plasma doping that dopant is phosphoric acid($H_3PO_4$). Metal tube injected Ar gas was inputted 5 kV of a low frequency(scores of kHz) induced inverter, so plasma discharged at metal tube. We used the P type silicon wafer of solar cell. We regulated phosphoric acid($H_3PO_4$) concentration on 10% and plasma treatment time is 90 s, 150 s, we experiment that plasma current is 70 mA. We check the doping depth that 287 nm at 90 s and 621 nm at 150 s. We analysis and measurement the doping profile by using SIMS(Secondary Ion Mass Spectroscopy). We calculate and grasp the sheet resistance using conventional sheet resistance formula, so there are 240 Ohm/sq at 90 s and 212 Ohm/sq at 150 s. We analysis oxygen and nitrogen profile of concentration compared with furnace to check the doped defect of atmosphere.

• 신재생에너지
• /
• 제9권2호
• /
• pp.23-29
• /
• 2013

Furnace and laser is currently the most important doping process. However furnace is typically difficult appling for selective emitters. Laser requires an expensive equipment and induces a structural damage due to high temperature using laser. This study has developed a new atmospheric pressure plasma source and research atmospheric pressure plasma doping. Atmospheric pressure plasma source injected Ar gas is applied a low frequency (a few 10 kHz) and discharged the plasma. We used P type silicon wafers of solar cell. We set the doping parameter that plasma treatment time was 6s and 30s, and the current of making the plasma is 70 mA and 120 mA. As result of experiment, prolonged plasma process time and highly plasma current occur deeper doping depth and improve sheet resistance. We investigated doping profile of phosphorus paste by SIMS (Secondary Ion Mass Spectroscopy) and obtained the sheet resistance using generally formula. Additionally, grasped the wafer surface image with SEM (Scanning Electron Microscopy) to investigate surface damage of doped wafer. Therefore we confirm the possibility making the selective emitter of solar cell applied atmospheric pressure plasma doping with phosphorus paste.