• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.126-126
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• 2009

Noninvasive plasma diagnostic technique is introduced to analyze and characterize HICP (Helmholtz Inductively Coupled Plasma) source during the plasma etching process. The HICP reactor generates plasma mainly through RF source power at 13.56MHz RF power and RF bias power of 12.56MHz is applied to the cathode to independently control ion density and ion energy. For noninvasive sensors, the RF sensor and the OES (Optical emission spectroscopy) were employed since it is possible to obtain both physical and chemical properties of the reactor with plasma etching. The plasma impedance and optical spectra were observed while altering process parameters such as pressure, gas flow, source and bias power during the poly silicon etching process. In this experiment, we have found that data measured from these noninvasive sensors can be correlated to etch results. In this paper, we discuss the relationship between process parameters and the measurement data from RF sensor and OES such as plasma impedance and optical spectra and using these relationships to analyze and characterize H-ICP source.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.942-946
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• 2006

We simulated insulation defects of stator winding wire on high voltage generator by 5 types. 4 types have one discharge source and other one has multi discharge source by simulation. For accurate decision, measurements used to PRPD pattern to occurred partial discharge source of various types. In this research, when PRPD pattern carried out or analyzed pattern recognition of discharge source, it used to powerful tools. In this result, PRPD Pattern defined to have single discharge source of 4 types by insulation defect. When insulation defect simulated, all the defected winding have not the same result. Errors for a little different can make mistakes from a subtle distinction. The difference between internal and void discharge have magnitude of pulse amplitude of inner discharge bigger than void discharge and have a shape of bisymmetry. But void discharge has a shape of bisymmetry against maximum value on polarity respectively. In cases of slot and surface discharge, we confirmed to show similar results those other researchers. In case of multi-discharge, as a result of we could classify not perfect match with occurred patterns in single discharge eachother. In the future, we will have to recognize and classify with results of multi-discharge.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.158-163
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• 2013

In this paper, thermal analysis of heatsink for 30 W class Chip-on-Board (COB) LED light source is performed by using SolidWorks Flow Simulation package. In order to increase the convection heat transfer, number of fin and shape of the heatsink is optimized. Furthermore, a copper spread is applied between the COB LED light source and the heatsink to mitigate the heat concentration on the heatsink. With the copper spread, the junction temperature between the COB LED light source and the heatsink is $50.9^{\circ}C$, which is $5.4^{\circ}C$ lower than the heatsink without the copper spread. Due to the improvement of the junction temperature, the light output is improved by 5.8% when the LED light source is stabilized. The temperature difference between the simulation and measured result of the heatsink with the copper spread is within $2^{\circ}C$, which verifies the validity of the thermal design method using a simulation package.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.86-90
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• 2006

Discharge of the flat lamp lighting source research are requested very much. For improving brightness, life time, efficiency of flat lamp, plasma diagnosis of the f1at lamp lighting source to understand property of lighting source is very important. Distance of discharge electrode is 5.5mm and width is 16.5mm, we have measured electron temperature and electron density measured with single Langmuir probe in flat lamp. We have tested the discharge from 100 Torr to 300 Torr pressure. The pulse is rectangular pulse with frequency 20kHz and duty ratio 20%. In result, electron temperature decreases and electron density increase as increase the gas pressure and electron temperature decreases and electron density increase as increase the voltage.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.433-436
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• 2018

A total internal reflection (TIR) linear lens of size $190(W){\times}5(D){\times}2.1(H)mm^3$ has a directivity of $25^{\circ}$ and was made of a polydimethysiloxane (PDMS) silicone resin with a refractive index of 1.4 and a transmittance of 93% at 365 nm UV wavelength. A light source with a size of $190{\times}25.5mm^2$ was fabricated by installing a TIR linear lens on a chip on board (COB) type LED module mounted with a $1.1{\times}1.1mm^2$ size UV LED. The optical characteristics of the light source showed a maximum irradiation density of $3,840mW/cm^2$ at a working distance of 5 mm and a high uniformity of 91.6% over a $150{\times}25mm^2$ irradiation area. The thermal characteristics of the light source were measured at a supply current of 500 mA. The saturation temperature was reached after 30 min of operation, and measured to be $95^{\circ}C$.

• 한국산학기술학회논문지
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• 제7권5호
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• pp.759-765
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• 2006

유기발광다이오드(OLED)증착을 위한 서큘러소스의 열전달 해석을 통하여 온도분포를 연구하였다. 대면적의 OLED용 평판의 유기물증착을 위해 서큘러소스가 사용되는데, 소스내의 유기물이 가열되고, 승화되어 증착된다. 유기물의 수율을 높이기 위해 히터설계를 개선하고, 이에 대한 열전달해석을 수행하였다. 그리고, 효율을 높이기 위한 새로운 제조공정인 OVPD공정의 개념과 유도 및 열전달특성에 관한 기본적인 연구결과를 제시하였다.

• Nuclear Engineering and Technology
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• 제54권3호
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• pp.1030-1036
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• 2022

A high detection efficiency thermal neutron detector based on the ⁶LiF/ZnS(Ag) scintillation screens, wavelength-shifting fibers (WLSF) and Silicon photomultiplier (SiPM) readout is under development at China Spallation Neutron Source (CSNS) for the Engineering Material Diffractometer (EMD).A prototype with a sensitive volume of 180mm×192mm has been built. Signals from SiPMs are processed by the self-design Application Specific Integrated Circuit (ASIC). The performances of this detector prototype are as follows: neutron detection efficiency could reach 50.5% at 1 Å, position resolution of 3, the dark count rate <0.1Hz, the maximum count rate >200KHz. Such detector prototype could be an elementary unit for applications in the EMD detector arrays.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국산학기술학회논문지
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• 제19권9호
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• pp.124-129
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• 2018

본 연구는 Apron의 재질로 이용되고 있는 텅스텐 차폐체를 핵의학과에서 사용하는 선원의 종류와 차폐체의 두께, 선원부터 검출기 사이의 거리를 변화시켜 차폐체에 투과시킨 후 투과선량과 차폐율을 알아보고자 하였다. 실험을 위해서 선원과 차폐체와 검출기를 일직선으로 배치하고 높이 100 cm 지점에서 Inspector로 측정하였다. 그 결과 텅스텐에 차폐효과가 가장 높은 선원은 $^{201}Tl$ 선원으로 측정되었고, $^{123}I$ 선원이 $^{99m}Tc$ 선원보다 차폐효과가 높게 나타났다. 실험에 사용한 선원과 검출기 사이의 거리는 멀어질수록 투과선량은 작아졌고, 텅스텐 차폐체의 두께는 두꺼울수록 차폐율은 높게 측정되었다. 하지만 $^{131}I$와 $^{18}F$ 선원에서는 0.25 mmPb의 차폐체를 사용했을 경우 차폐체가 없을 경우 보다 차폐율이 감소하는 것을 확인하였다. 따라서 $^{13}1I$와 $^{18}F$ 선원을 사용할 경우에는 방사선 차폐효과가 높은 텅스텐일지라도 선원의 종류에 따른 특성과 차폐체의 두께를 고려하여 사용하길 권장하고, 실험 결과를 참고하여 사용한다면 피폭 저 감화방안에 도움을 줄 수 있을 것으로 생각된다.

• Nuclear Engineering and Technology
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• 제50권6호
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• pp.989-995
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• 2018

Argonne National Laboratory of the United States and Kharkov Institute of Physics and Technology (KIPT) of Ukraine have cooperated on the development, design, and construction of a neutron source facility. The facility was constructed at Kharkov, Ukraine, and its commissioning process is underway. The facility will be used for researches, producing medical isotopes, and training young nuclear specialists. The neutron source facility is designed with a provision to include a cryogenically cooled moderator system-a cold neutron source (CNS). This CNS provides low-energy neutrons, which will be used in the scattering experiment and material structures analysis. Cold neutron guides, coated with reflective material for the low-energy neutrons, will be used to transport the cold neutrons to the experimental site. The cold neutron guides would keep the cold neutrons within certain energy and angular space concentrated inside, while most of the gamma rays and high-energy neutrons are not affected by the cold neutron guides. For the KIPT design, the cold neutron guides need to extend several meters outside the main shield of the facility, and curved guides will also be used to remove the gamma and high-energy neutron. The neutron guides should be installed inside a shield structure to ensure an acceptable biological dose in the facility hall. Heavy concrete is the selected shielding material because of its acceptable performance and cost. Shield design analysis was carried out for the CNS guide hall. MCNPX was used as the major computation tool for the design analysis, with neutron and gamma dose calculated separately. Weight windows variance reduction technique was also used in the shield design. The goal of the shield design is to keep the total radiation dose below the $5.0{\mu}Sv/hr$ guideline outside the shield boundary. After a series of iterative MCNPX calculations, the shield configuration and parameters of CNS guide hall were determined and presented in this article.