• Progress in Superconductivity and Cryogenics
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• v.14 no.2
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• pp.32-35
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• 2012

The objective of the present work is to develop a precise instrument for measuring the thermal property of insulating material over a temperature range from 30 K to near room temperature by utilizing a cryocooler. The instrument consists of two thermal links, a test sample, heat sink, heat source and vacuum vessel. The cold head of the cryocooler as a heat sink is thermally anchored to the thermal link and used to bring the apparatus to a desired temperature in a vacuum chamber. An electric heater as a heat source is placed in the middle of test sample for generating uniform heat flux. The entire apparatus is covered by thermal shields and wrapped in multi-layer insulation to minimize thermal radiation in a vacuum chamber. For a supplied heat flux the temperature distribution in the insulating material is measured in steady and transient state. The thermal conductivity of insulating material is measured from temperature difference for a given heat flux. In addition, the specific heat of insulating material is obtained by solving one-dimensional heat diffusion equation.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.25 no.2
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• pp.54-65
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• 2021

In this study, a two-dimensional thermoelastic problem under hyperbolic heat conduction theory with an internal heat source is considered. The general solution for the temperature field, stress components and displacement field are obtained using the reduced differential transform method. The stress and displacement components are obtained using the thermal stress function in the reduced differential transform domain. All the solutions are obtained in the form of power series. The special case with a time-dependent laser heat source has been considered. The problem is considered for homogeneous material with finite rectangular cross-section heated with a non-Gaussian temporal profile. The effect of the heat source on all the characteristics of a material is discussed numerically and graphically for magnesium material taking a pulse duration of 0.2 ps. This study provides a powerful tool for finding the solution to the thermoelastic problem with less computational work as compared to other methods. The result obtained in the study may be useful for the investigation of thermal characteristics in engineering and industrial applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.320-323
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• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.620-628
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• 2008

Cadmium sulphide (CdS) thin film, which is used as a window layer of heterojunction solar cell, on the glass substrate was deposited by vacuum evaporation. Effects of deposition conditions such as the source and substrate temperature on electrical and optical properties of CdS films was investigated. As the source temperature was increased, the deposition rate of CdS films was increased. In addition, the optical transmittance and the electrical resistivity of CdS films were decreased as the source temperature was increased. This results were attributed to the increase of excess Cd amount in the film. The crystal structure of CdS films exhibited the hexagonal phase with preferential orientation of the (002) plane. As the substrate temperature was increased, the crystal structure of CdS films was improved and the resistivity of the films was increased due to the decrease of excess Cd in film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.889-894
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• 2007

We investigated the quench velocity of superconducting fault current limiter (SFCL) dependent on the source voltage. $YBa_2Cu_3O_7$ (YBCO) thin film was used as the current limiting element for SFCL. The analysis on the quench velocity of SFCL is essential to determine the capacity of circuit breaker (CB) or coordinate with CB. Generally, the quench velocity of SFCL is related with the short-circuit current. To change the short-circuit current, in this paper, the amplitude of the power source voltage is adjusted. Through the fault current limiting experiments, the quench velocity of SFCL was confirmed to increase fast as the source voltage increased. On the other hand, the peak limited current was shown to increase with steady rate of increase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.71-74
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• 2006

Discharge of the flat lamp lighting source research arc requested very much. For improving brightness, life time, efficiency of flat lamp, plasma diagnosis of the flat lamp lighting source to understand property of lighting source is very important. distance of discharge electrode is 5.5mm and width is 16.5mm, we measured electron temperature and electron density measured with single langmuir probe in flat lamp. we tested the discharge from 100 Torr to 300 Torr pressure. the Pulse is rectangular pulse with frequency 20kHz and Duty ratio 20%. Resultly, electron temperature decreases and electron density increase as increase the gas pressure and electron temperature decreases and electron density increase as increase the voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.344-349
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• 2015

A new information society of late has arrived by the rapid development of various information & communications technologies. Accordingly, mobile devices which are light and thin, easy and convenient to carry on the market. Also, the requirements for the larger television sets such as fast response speed, low-cost electric power, wider visual angle display are sufficiently satisfied. The currently most widely studied display material, the Organic Light-emitting Diodes(OLEDs) overwhelms the Liquid Crystal Display(LCD), the main occupier of the market. This new material features a response speed of more than a thousand times faster, no need of backlight, a low driving voltage, and no limit of view angle. And the OLEDs has high luminance efficiency and excellent durability and environment resistance, quite different from the inorganic LED light source. The OLEDs with simple device structure and easy produce can be manufactured in various shapes such as a point light source, a linear light source, a surface light source. This will surely dominate the market for the next generation lighting and display device. The new display utilizes not the glass substrate but the plastic one, resulting in the thin and flexible substrate that can be curved and flattened out as needed. In this paper, OLEDs device was produced by changing thickness of Teflon-AF of hole injection material layer. And as for the electrical properties, the four layer device of ITO/TPD/$Alq_3$/BCP/LiF/Al and the five layer device of ITO/Teflon AF/TPD/$Alq_3$/BCP/Lif/Al were studied experimentally.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1010-1014
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• 2004

High quality GaN layer and $In_xGa_{1-x}N$ alloy were obtained on (0001)sapphire substrate using ammonia$(NH_3)$ and dimethylhydrazine$(DMH_y)$ as a nitrogen source by gas source molecular hem epitaxy(GSMBE) respectively. As a result, RHEED is used to investigate the relaxation processes which take place during the growth of GaN and $In_xGa_{1-x}N$. The full Width at half maximum of the x-ray diffraction(FWHM) rocking curve measured from Plane of GaN has exhibitted as narrow as 8 arcmin. Photoluminescence measurement of GaN and $In_xGa_{1-x}N$ were investigated at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. In content of $In_xGa_{1-x}N$ epitaxial layer according to growth condition was investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.737-743
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• 2006

[ $Li[Co_{0.50}Li_{0.17}Mn_{0.33}]O_2$ ] powder was prepared using a simple combustion method. specially, ratio of 2:1, 3:2, 1:1, 2:3, 1:2 was adopted as acetate source/nitrate source. The diffraction pattern of $Li[Co_{0.50}Li_{0.17}Mn_{0.33}]O_2$ powder showed that this compound could be classified as hexagonal $a-NaFeO_2$ structure (space group : $R\bar{3}m$). The size of powder was less than $1{\mu}m$. Small particle size of cathode powder would give a good ionic and electronic conductivity to cathode electrode, which made of cathode powder. As the increase of nitrate source-ratio, discharge capacity of $Li[Co_{0.50}Li_{0.17}Mn_{0.33}]O_2$ at high charge-discharge rate was increased. When the ratio of acetate source/nitrate source was 1:2, discharge capacity at 10 C rate (2000 mA/g) was 180 mAh/g. It was $10{\sim}15%$ larger than that of powder, which have 2:1 as acetate source/nitrate ratio.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.3
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• pp.103-111
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• 2021

Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method, nuclei are formed by the interaction between GaCl_n, AlCl_n and SiCl_n gases at a high temperature of 1200℃. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.