Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Growth of InGaN on sapphire by GSMBE(gas source molecular beam epitaxy) using $DMH_y$(dimethylhydrazine) as nitrogen source at low temperature

Nitrogen source로 암모니아, $DMH_y$(dimethylhydrazine)을 사용해 Gas-Source MBE로 성장된 InGaN 박막특성

  • 조해종 (영남대학교 광전자연구실) ;
  • 한교용 (영남대학교 전자정보공학부) ;
  • 서영석 (영남대학교 전자정보공학부) ;
  • ;
  • Published : 2004.07.05
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Abstract

High quality GaN layer and $In_xGa_{1-x}N$ alloy were obtained on (0001)sapphire substrate using ammonia$(NH_3)$ and dimethylhydrazine$(DMH_y)$ as a nitrogen source by gas source molecular hem epitaxy(GSMBE) respectively. As a result, RHEED is used to investigate the relaxation processes which take place during the growth of GaN and $In_xGa_{1-x}N$. The full Width at half maximum of the x-ray diffraction(FWHM) rocking curve measured from Plane of GaN has exhibitted as narrow as 8 arcmin. Photoluminescence measurement of GaN and $In_xGa_{1-x}N$ were investigated at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. In content of $In_xGa_{1-x}N$ epitaxial layer according to growth condition was investigated.

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