• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.12-16
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• 1991

Cadmium sulphide films with thickness of 0.6∼1.2$\mu\textrm{m}$ were deposited onto corning 7059 glass substrate under a vacuum of 5${\times}$10$\^$-6/ Torr. Source and substrate temperature ranges used were 800∼1100$^{\circ}C$ and 100∼200$^{\circ}C$, respectively. The microstructures and semiconducting properties of the films were studied using X-ray diffraction, UV-VIS-IR spectrophotometer and Hall measurement unit. Electrical resistivity and optical transmission of the CdS films decrease with an increase in source temperature while they increase with an increase in substrate temperature. The resistivity of the film evaporated at 1100$^{\circ}C$ varied from 7${\times}$10$^3$ohm-cm at the substrate temperature of 100$^{\circ}C$ to 2${\times}$10$\_$6/ohm-cm at 190$^{\circ}C$. All the films had hexagonal structure and strong texture with c-axis of grains normal to the substrate glass.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.193-198
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• 2005

NOR type flash 32 ${\times}$ 32 way are fabricated by using the typical 0.35 ${\mu}{\textrm}{m}$ CMOS process. The structure of array is the NOR type with common source line. In this paper, optimized program and erase voltage conditions are presented to realize multi-bit per cell at the CSL-NOR array. These are considered selectivity of selected bit and disturbances of unselected bits. Retention characteristics of locally trapped-charges in the nitride layer are investigated. The lateral diffusion and vertical detrapping to the tunneling oxide of locally trapped charges as a function of retention time are investigated by using the charge pumping method. The results are directly shown by change of the trapped-charges quantities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.19-22
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• 2001

For stabilization and improving power factor in the power lines, various Static Var Compensators(SVC) have been considered to be installed and partly applicated already. With all these merits of the SVC, it stil has demerits, principally evoking harmonic problems. So far, many harmonic reduction type inverters have been used in various parts. In this paper, the reactive power is controlled by amplitude of the output voltage. This paper propose that the multiple voltage source inverter have controllable power factor made by load vary at receive-stage as lagging and leakage control. The theoretical analysis on this system was confirmed through the computer simulation and the experiments.

• Journal of environmental and Sanitary engineering
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• v.14 no.2
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• pp.1-7
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• 1999

In the tungsten industry as light source material, tungsten filament which used as light source material ould form after molybdenum wire which used as the center supporter for coil shape tungsten wire was removed. The purpose of this study is to develop new process named "hydrogen peroxide dissolution method". This process uses hydrogen peroxide, which is harmless to human body and oxidize molybdenum wire selectively. The results were as follows:1. The dissolution of molybdenum wire was proportion to a solution and contact surface of molybdenum wire. 2. The optimum $H_2O_2/H_2O$ were 1:0.5 ~ 1:1.75. 3. The time of dissolution was 65~70 minutes, and the PCS of sample were 20,800 PCS(1,820g). 4. Total cost($H_2O_2$, catalyst) was ￦19,088.

• KIEAE Journal
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• v.14 no.2
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• pp.29-36
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• 2014

The ground source heat pump (GSHP) system has attracted much of attention, because of its stability of heat production and the high efficiency of the system. Performance of the heat exchanger is dependent on the soil temperature, the ground thermal conductivity, the operation schedule, the pipe placement and the design temperature. However, in spite of the many variables of these systems, there have been few research on the effect of the systems on system performance. In this study, analysis of the heat exchange rate according to soil temperature and grout material was conducted by numerical simulation. Furthermore, the heat distribution around the ground heat exchanger was presented on the different conditions of grout and underground temperature by the simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.160-163
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• 2002

Silica waveguide for an integrated diffractive optical head system was designed and fabricated. The waveguide was designed to optimize the optical efficiency of red and/or blue laser source, and a lab-made RF magnetron sputter was adopted to deposit silica cladding and core layers on SiO$_2$/Si substrates. The cladding and core layers were formed using commercial targets, and the former was done with ＃7740 and the latter with BK7 and BAK4, respectively The surface roughness of the waveguide layers was measured to be 30.3${\AA}$ for BK7 and 17.8${\AA}$ for BAK4, and the difference of refractive indices between core and cladding layers was 0.9% and 2.5%, respectively. The waveguide fabricated with the core layer of BK7 showed better optical properties when the final diffractive optical probe heads were measured with red laser(650nm) source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.26-31
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• 2002

To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

• Journal of the Korean Ceramic Society
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• v.15 no.3
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• pp.149-156
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• 1978

The utilization of waste and industrial byproduct materials, such as blast furnace slag, shales, poor coal and anthracite briquet ash, were investigated as a source of calcareous or argillaceous material in the manufacture of Portland cement. As a slag is similar to cement in chemical compoment and contains about 40∼50% of CaO, it's utilization in cement manufacture should be suitable. The burnability was increased and the heat of clinker formation was decreased by using slag. Some consideration should betaken in the use of large quantity because of sticking in suspension preheater kiln. Suitable quantities of colliery shales and poor coal should be useable in cement manufacture as a argillaceous materials and also its combustible materials should be utilized in cement manufacture. Anthracite briquet ash is also usable as a argillaceous source and it gives good burnability.

• Korean Journal of Pharmacognosy
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• v.7 no.2
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• pp.85-93
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• 1976

Since cellulose is the only organic material that is annually replenishable in very large quantities, we must explore ways to utilize it as a source of energy, food and chemicals. For the utilization of this resource, it is first enzymatic hydrolyzed to glucose, then the glucose can be used as a food, converted single cell protein by microorganism, fermented to clean burning fuel and other chemicals. Cellulolytic enzyme, cellulase, consists of two or three major components, $C_1-cellulase$, $C_x-cellulase$ and ${\beta}-glucosidase$. $C_x-cellulase$ are fairly common but $C_1-cellulase$ are quite rare. Trichoderma viride is the best source of active cellulose, especially $C_1-enzyme$. Saccharification rate of cellulose in greatly influenced by the degree of crystallinity and extent of lignification. But by the pretreatment the substrate with cellulose swelling agent, delignifying reagent and physical treatment, the degree of saccharification is enhanced. Thus, glucose syrups of 2 to 10% concentration are realized from milled newspaper. The enzymatic hydrolysis of such energy rich material, such as cellulose, to glucose is technically feasible and practically achievable on a very large scale.