• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.75-78
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• 1995

Gas source molecular beam epitaxy have been used in the growth of InAlAsAnGaAs MSM-PD structure, in which InAlAs ultra thin layer was used as Schottky barrier enhancement material. High performance MSM-PDs have been constructed on the grown wafer. High breakdown voltage of >30V, low dark current density of $3pA/\mu \textrm{cm}^2$ at 10V bias and fast transient response of <20ps rise time / <40ps FWHM have been measured, which confirm the results that GSMBE is a superior method for the growth of materials with high layer and interfacial quality, especially for InP based InAIAdInGaAs system.

• Fisheries and Aquatic Sciences
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• v.5 no.1
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• pp.5-20
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• 2002

To investigate the effect of mechanical parameters on the circulation and its fluctuation in Sagami Bay, baroclinic model experiments were carried out by use of a two-layer source-sink flow in a rotating tank. In the experiment, a simple coastal topography with flat bottom was reproduced. The results show that the path of the Through Flow, which corresponds to the branch current of the Kuroshio, depends on external Rossby number (Ro) and internal Rossby number $(Ro^*)$, and divided into two regimes. For $Ro^*\leq1.0$ in which Rossby internal radius of deformation of the Through Flow is smaller than the width of the approaching channel, the current flows along the Oshima Island as a coastal boundary density current separated from the western boundary of the channel. For $Ro^*>1.0$ it changes to a jet flow along the western boundary of the channel, separated from the coast of Oshima Island. The current is independent on both Ro and Ro* in the regime of $Ro^*>1.0,\;Ro\geq0.06$ and $Ro^*\leq1.0,\;Ro\geq0.06$. The pattern of the cyclonic circulation in the inner part of the bay is also determined by Ro and Ro*. In case of $Ro^*\leq1.0$, frontal eddies are formed in the northern boundary of the Through Flow. These frontal eddies intrude into the inner part along the eastern boundary of the bay providing vorticity to form and maintain the inner cyclonic circulation. For $Ro^*>1.0$, the wakes from the Izu peninsula are superposed intensifying the cyclonic circulation. The pattern of the cyclonic circulation is divided into three types; 1) weak cyclonic circulation and the inner anticyclonic circulation $(Ro<0.12)$. 2) cyclonic circulation in the bay $(0.12\leq Ro<0.25)$. 3) cyclonic circulation with strong boundary current $(RO\geq0.25)$.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.307-310
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 $\sim$ 90 nm was achieved at 7.1 mA/cm$^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm$^{-1}$. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.82-85
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• 2003

This dissertation describes an optimization method for fabricating thick films with superconducting YBCO powders by electrophoresis technique. The lateral alternating applied voltage caused to shake the superconducting powder vertically to the deposition field during the process of the oriented deposition so that it was deposited along the c-axis on the silver tape with shaky-aligned EPD. As the result, the optimized thin film fabrication method was obtained to get more dense and uniform surface morphology as well as the improved critical current density. For commercial utilization and efficiency, in this dissertation, alternating voltage of 25-120 V/cm in frequency of 60Hz was proposed to apply it as a subsidiary source for shaky-flow deposition so that the fabricated thin film showed uniform surface morphology with less voids and cracks and $T_{c.zero}$ of 90 K and the critical current density of $3419A/cm^2$.

• Journal of Electrochemical Science and Technology
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• v.1 no.2
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• pp.75-80
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• 2010

We report Co-tetramethoxyphenylporphyrin on carbon particles (Co-TMPP/C) as a non-Pt catalyst for tri-iodide reduction in dye-sensitized solar cells (DSSCs). The presence of well-dispersed carbon and cobalt source in the catalyst surface is confirmed by transmission electron microscopy, scanning electron microscopy, and energy dispersive X-ray analysis. In the C 1s, Co 2p, and N 1s peaks measured by X-ray photoelectron spectroscopy, the C-N, Co-$N_4$, and N-C are assigned to the component at 285.7, 781.8, and 401 eV, respectively. Especially, the Co-TMPP/C shows improved current density, diffusion coefficient, and charge-transfer resistance in the ${I_3}^-/I^-$ redox reaction compared to conventional catalysts. Furthermore, in the DSSCs performance, the Co-TMPP/C shows increased short circuit current density, higher open circuit voltage, and improved cell efficieny in comparison with Pt/C.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.368-375
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• 1999

The Maxwell equation and the transformer equivalent-circuit model are applied to a radio frequency planar inductively coupled plasma. The spatial distribution of the vector potential, the magnetic field, and the electric field are obtained analytically. As a result, the plasma current, the mutual inductance between the coil and the plasma, and the self inductance of plasma are found to increase with increasing skin depth. The spatial distribution of absorbed power has maximum where the antenna coil exists, and has a similar profile to that of the induced electric field. The power transfer efficiency is found to increase with increasing gas pressure before a saturation around p+ 20mTorr, while it shows an increase with the plasma density before a slight decrease around a density of $5\times10^{11}/\textrm{cm}^3$.

• Proceedings of the Safety Management and Science Conference
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• 2003.11a
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• pp.335-343
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• 2003

In the electrode fabrication of unit cell, it was ascertained that electrochemical characteristics were greatly increased with 90 wt.% of BP-20, 5 wt.% of Super P and 5 wt.% of mixed binder [P(VdF-co-HFP) : PVP =7 : 3] The self-discharge of unit cell showed that diffusion process was controlled by the ion concentration difference of initial electrolyte due to the characteristics of Electric Double Layer Capacitor (EDLC) charged by ion adsorption in the beginning, but this by current leakage through the double-layer at the electrode/electrolyte interface had a minor effect and voltages of curves were remained constant regardless of electrode material. The electrochemical characteristics of 2.3 V/3,000 F grade EDLC were as follows: 0.35 m of DC-ESR (100 A discharge), 0.14 mof AC-ESR (AC amplitude 100 mV), 2.80 Wh/kg (3.73 Wh/L) of energy density and 4.64 kW /kg (6.19 kW/L) of power density. Power output was compatible with electric vehicle applications, uninterrupted power supply and engine starter, in due consideration of Ragone relations.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.187-194
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• 2005

An analysis of the 1/f or flicker noise in FD n-channel Double Gate SOI MOSFET is proposed. In this paper, the variation of power spectral density (PSD) of the equivalent noise voltage and noise current with respect to frequency, channel length and gate-to-source voltage at various temperatures and exponent $C(i.e\;1/f^c$ is reported. The temperature is varied 125 K from to room temperature. The variation of PSD with respect to channel length down to $0.1{\mu}m$ technology is considered. It is analyzed that l/f noise in FD n-channel Double Gate SOI MOSFET is due to both carrierdensity fluctuations and mobility-fluctuations. But controversy still exits to its origin.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.101-105
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• 2004

The efficient power MOSFET inverter applied for a simple and low cost power supply is proposed for driving the dielectric barrier discharge (DBD) lamp load. For decades, the DBD phenomenon has been used for ozone gas production in industry. In this research, the ultraviolet and visible light sources utilizing the DBD lamp is considered as the load for solid-state high frequency power supply. It is found that the simple voltage-source single-ended quasi-resonant ZVS inverter with only one active power switch could effectively drive this load with the output power up to 700 W. The pulse density modulation based control scheme for the single-ended quasi-resonant ZVS inverter using a low voltage and high current power MOSFET switching device is proposed to provide a linear power regulation characteristic in the wide range 0-100％ of the full power as compared with the conventional control based Royer type parallel resonant inverter type power supplies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.157-158
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• 2007

Effects of post-metallization anneal (PMA) on interface trap characteristics of Si-$SiO_2$ are studied. The conventional PMA method utilizes forming gas anneal, where 10% hydrogen in nitrogen atmosphere is used. A new PMA method utilizes hydrogen rich PECVD- silicon nitride $(SiN_x)$ film as a hydrogen diffusion source and a out-diffusion blocking layer. It can be shown through charge pumping current measurement that the new PMA is indeed effective to decrease Si-$SiO_2$ interface trap density.