• 한국전자통신학회논문지
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• 제17권6호
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• pp.1175-1180
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• 2022

STI는 반도체 소자의 소형화 및 고집적화에 따른 광역 평탄화를 위한 공정 기술로써 많은 연구가 이루어져 왔다. 본 연구에서는 STI의 profile 개선을 위한 방법으로 STI 건식각 후 HF 용액에 의한 pad oxide 습식각과 O₂+CF₄ 건식각을 제안하였다. 이 공정 기술은 기존의 방법보다 소자의 밀집도에 따른 패턴간의 프로파일 불균형과 누설전류의 개선을 나타내었다. 또한 동일한 STI 깊이와 HLD 증착를 갖는 디바이스에 대하여 CMP 후 HLD 두께를 측정한 결과 디바이스 밀도에 따라 측정값이 다르게 나타났고 이는 CMP 후 디바이스 밀도에 따른 질화막의 두께 차이 및 슬러리의 선택비에 기인됨을 확인하였다.

• 대한약침학회지
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• 제25권4호
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• pp.396-403
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• 2022

Objectives: Gout is an inflammatory arthritis of the joints and soft tissues occurring due to deposition of monosodium urate (MSU) crystals, which are caused by persistent hyperuricemia. Soyeom pharmacopuncture is one treatment method that has been traditionally used for pain management in Oriental medicine. However, studies on its effect in reducing gout pain have been insufficient. Therefore, we selected Soyeom pharmacopuncture among natural products used in Korea as the new target of our study. Methods: The effects of Soyeom pharmacopuncture were examined in mouse models of acute gout induced by injection of MSU crystals into footpads. IL-1β, IL-6, and TNF-α production were examined by immunoblotting and enzyme-linked immunosorbent assay as hallmarks of NLRP3 inflammasome and cytokine activation. Results: Soyeom pharmacopuncture reduced foot edema in gout-induced mice, as well as IL-1β, nitrite, IL-6, and TNF-α production. Moreover, Soyeom pharmacopuncture also reduced MSU-induced gout inflammatory gene expressions, specifically those in the NF-kB pathway. Conclusion: Pharmacopuncture may serve as a new solution for other inflammatory diseases as well. Through active follow-up studies, we could thoroughly understand the clinical value of Soyeom pharmacopuncture.

• 한국초전도ㆍ저온공학회논문지
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• 제9권2호
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• pp.23-26
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• 2007

The influence of water partial pressure in Metal-organic Deposition (MOD) method was investigated on the texture and the morphology of $YBa_2Cu_3O_{7-x}$ (YBCO) films grown on the buffered metal tapes. The water partial pressure was varied from 4.2% up to 10.0% with the other process variables, such as annealing temperature and oxygen partial pressure, kept constant. In this work, the fluorine-free Y & Cu precursor solution added with Sm was synthesized and coated by the continuous slot-die coating & calcination step. The next annealing step of the YBCO films was done by the reel-to-reel method with the gas flowed vertically down. From the x-ray diffraction analysis, the un-reacted phase like $BaF_2$ peak was found at the water partial pressure of 4.2%, but $BaF_2$ peak intensity is much reduced as the water partial pressure is increased. However, the higher water partial pressure of about 10% in this experiment leads to the poor crystallinity of YBCO films. The morphologies of the YBCO films were not different from each other when the water partial pressure was varied in this work. The maximum critical current density of 3.8MA/$cm^2$ was obtained at the water partial pressure of 6.2% with the annealing temperature of 780$^{\circ}C$ and oxygen partial pressure of 500ppm.

• 청정기술
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• 제15권1호
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• pp.31-37
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• 2009

본 연구는 하수슬러지 탄화물과 활성화제의 화학적 활성화반응을 이용한 활성탄 제조공정을 다루고 있다. 일반적으로 활성화제로는 알칼리 약품을 이용하는데 본 연구에서는 탄소와 활성화반응이 잘 이루어지는 KOH와 NaOH를 사용하였다. 실험결과, KOH로 제조된 활성탄이 NaOH로 제조된 활성탄보다 요오드 흡착력과 비표면적(BET) 등의 물성이 우수하였다. 하수슬러지 탄화물과 활성화제의 최적 침적비율은 KOH 75 wt%, NaOH 50 wt%임을 알 수 있었다. 5 M 염산용액으로 세척하여 중화시킨 후 증류수로 세정하는 활성탄 세정방법을 사용하였다. 본 연구의 최적 실험조건에서 하수슬러지 탄화물을 이용하여 제조된 활성탄의 경우 BET표면적 값이 약 $600m^2/g$에 이르렀다.

• Nuclear Engineering and Technology
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• 제55권5호
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• pp.1855-1862
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• 2023

Graphite crucibles are used for melting uranium and its alloys in VIM furnace. Various coating materials namely Al₂O₃, ZrO₂, MgO etc. are applied on the inner surface of the crucibles using paint brush or thermal spray technique to mitigate U-C interaction. These leads to significant amount of carbon pick-up in uranium. In this study, the attempts are made to develop multilayer coatings comprising of SiC/Y₂O₃ and Mo/Y₂O₃ on graphite to study the feasibility of minimizing U-C interaction. The parameters are optimized to prepare SiC coating of about 70㎛ thickness using CVD technique on graphite coupons and subsequently Y₂O₃ coating of about 250㎛ thickness using plasma spray technique. Molybdenum and Y₂O₃ layers were deposited using plasma spray technique with 70㎛ and 250㎛ thickness, respectively. Interaction studies of the coated graphite with molten uranium at 1450℃ for 20 min revealed that Y₂O₃ coating with SiC interlayer provides physical barrier for uranium-graphite interaction, however, this led to the physical separation of coating layer. Y₂O₃ coating with Mo interlayer provided superior barrier effect showing no degradation and the coatings remained intact after interaction tests. Therefore, the Mo/Y₂O₃ coating was found to be a promising solution for minimizing carbon pick-up during uranium/uranium alloy melting.

• 한국표면공학회지
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• 제57권1호
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• pp.22-30
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• 2024

This study reports a direct growth of carbon nanotubes (CNTs) on the surface of LiCoO₂ (LCO) powders to apply as highly efficient cathode materials in lithium-ion batteries (LIB). The CNT synthesis was performed using a thermal chemical vapor deposition apparatus with temperatures from 575 to 625 ℃. Ferritin molecules as growth catalyst of CNTs were mixed in deionized (DI) water with various concentrations from 0.05 to 1.0 mg/mL. Then, the LCO powders was dissolved in the ferritin solution at a ratio of 1g/mL. To obtain catalytic iron nanoparticles on the LCO surface, the LCO-ferritin suspension was dropped in silicon dioxide substrates and calcined under air at 550℃. Subsequently, the direct growth of CNTs on LCO powders was performed using a mixture of acetylene (10 sccm) and hydrogen (100 sccm) for 10 min. The growth behavior was characterized by scanning and transmission electron microscopy, Raman scattering spectroscopy, X-ray diffraction, and thermogravimetric analysis. The optimized condition yielding high structural quality and amount of CNTs was 600 ℃ and 0.5 mg/mL. The obtained materials will be developed as cathode materials in LIB.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.417-417
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• 2016

Global environmental deterioration has become more serious year by year and thus scientific interests in the renewable energy as environmental technology and replacement of fossil fuels have grown exponentially. Photoelectrochemical (PEC) cell consisting of semiconductor photoelectrodes that can harvest light and use this energy directly to split water, also known as photoelectrolysis or solar water splitting, is a promising renewable energy technology to produce hydrogen for uses in the future hydrogen economy. A major advantage of PEC systems is that they involve relatively simple processes steps as compared to many other H2 production systems. Until now, a number of materials including TiO2, WO3, Fe2O3, and BiVO4 were exploited as the photoelectrode. However, the PEC performance of these single absorber materials is limited due to their large charge recombinations in bulk, interface and surface, leading low charge separation/transport efficiencies. Recently, coupling of two materials, e.g., BiVO4/WO3, Fe2O3/WO3 and CuWO4/WO3, to form a type II heterojunction has been demonstrated to be a viable means to improve the PEC performance by enhancing the charge separation and transport efficiencies. In this study, we have prepared a triple-layer heterojunction BiVO4/WO3/SnO2 photoelectrode that shows a comparable PEC performance with previously reported best-performing nanostructured BiVO4/WO3 heterojunction photoelectrode via a facile solution method. Interestingly, we found that the incorporation of SnO2 nanoparticles layer in between WO3 and FTO largely promotes electron transport and thus minimizes interfacial recombination. The impact of the SnO2 interfacial layer was investigated in detail by TEM, hall measurement and electrochemical impedance spectroscopy (EIS) techniques. In addition, our planar-structured triple-layer photoelectrode shows a relatively high transmittance due to its low thickness (~300 nm), which benefits to couple with a solar cell to form a tandem PEC device. The overall PEC performance, especially the photocurrent onset potential (Vonset), were further improved by a reactive-ion etching (RIE) surface etching and electrocatalyst (CoOx) deposition.

• 분석과학
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• 제10권3호
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• pp.187-195
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• 1997

[16]-ane-$S_4$/탄소분말 함량비를 50%로 하여 nujol oil과 혼합하여 수식전극을 제조하였다. $5.0{\times}10^{-4}M$ $Ag^+$를 포함하는 pH 4.5인 아세트 완충용액에 수식전극을 담가 $Ag^+$를 전극 표면에 흡착시켰다. 이 때 흡착시간을 15분으로 하고 전해환원시키는 시간은 -0.3V vs S.C.E에서 2분으로 하였다. 또한 0.1M $HNO_3$ 용액으로 전극을 활성화시켰으며 한번 활성화한 전극은 10회까지 사용이 가능하였다. 최적 분석조건에서 미분펄스 전압전류법으로 $5.0{\times}10^{-7}{\sim}1.5{\times}10^{-6}M$ 사이의 농도 범위에서 정량해 보았을 때 직선성이 잘 성립하였으며, 검출한계는 $2.0{\times}10^{-7}M$이었다. 대부분의 금속들은 방해를 주지 않았으나, Cu(II)은 방해를 나타내었다.

• Journal of Electrochemical Science and Technology
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• 제10권4호
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• pp.424-432
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• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.