• 한국초전도저온공학회:학술대회논문집
• /
• 한국초전도저온공학회 2003년도 추계학술대회 논문집
• /
• pp.27-29
• /
• 2003

Solution-based MOD-TFA deposition technology of YBCO layers offers a route to low-cost YBCO coated conductors. Since the structures and properties of grown thin film by MOD process are strongly influenced by chemistry of precursor solution, the chemical modification of precursor solution for MOD process are important for improvement of the electrical properties of YBCO films. In this study, the precursor solution for MOD process are modified by chemical additives and solvents. The microstructure and texture of YBCO films grown by chemically modified precursor solution were characterized with SEM/EDS, XRD.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2012년도 춘계학술발표대회
• /
• pp.65-65
• /
• 2012

Copper zinc tin sulfide ($Cu_2ZnSnS_4$, CZTS) is a very promising material as a low cost absorber alternative to other chalcopyrite-type semiconductors based on Ga or In because of the abundant and economical elements. In addition, CZTS has a band-gap energy of 1.4~1.5eV and large absorption coefficient over ${\sim}10^4cm^{-1}$, which is similar to those of $Cu(In,Ga)Se_2$(CIGS) regarded as one of the most successful absorber materials for high efficient solar cell. Most previous works on the fabrication of CZTS thin films were based on the vacuum deposition such as thermal evaporation and RF magnetron sputtering. Although the vacuum deposition has been widely adopted, it is quite expensive and complicated. In this regard, the solution processes such as sol-gel method, nanocrystal dispersion and hybrid slurry method have been developed for easy and cost-effective fabrication of CZTS film. Among these methods, the hybrid slurry method is favorable to make high crystalline and dense absorber layer. However, this method has the demerit using the toxic and explosive hydrazine solvent, which has severe limitation for common use. With these considerations, it is highly desirable to develop a robust, easily scalable and relatively safe solution-based process for the fabrication of a high quality CZTS absorber layer. Here, we demonstrate the fabrication of a high quality CZTS absorber layer with a thickness of 1.5~2.0 ${\mu}m$ and micrometer-scaled grains using two different non-vacuum approaches. The first solution-processing approach includes air-stable non-toxic solvent-based inks in which the commercially available precursor nanoparticles are dispersed in ethanol. Our readily achievable air-stable precursor ink, without the involvement of complex particle synthesis, high toxic solvents, or organic additives, facilitates a convenient method to fabricate a high quality CZTS absorber layer with uniform surface composition and across the film depth when annealed at $530^{\circ}C$. The conversion efficiency and fill factor for the non-toxic ink based solar cells are 5.14% and 52.8%, respectively. The other method is based on the nanocrystal dispersions that are a key ingredient in the deposition of thermally annealed absorber layers. We report a facile synthetic method to produce phase-pure CZTS nanocrystals capped with less toxic and more easily removable ligands. The resulting CZTS nanoparticle dispersion enables us to fabricate uniform, crack-free absorber layer onto Mo-coated soda-lime glass at $500^{\circ}C$, which exhibits a robust and reproducible photovoltaic response. Our simple and less-toxic approach for the fabrication of CZTS layer, reported here, will be the first step in realizing the low-cost solution-processed CZTS solar cell with high efficiency.

• Transactions on Electrical and Electronic Materials
• /
• 제13권4호
• /
• pp.196-199
• /
• 2012

CdS thin film was prepared on glass substrate by chemical bath deposition in an alkaline solution. The optical properties of CdS thin film were investigated using spectroscopic ellipsometry. The real (${\varepsilon}_1$) and imaginary (${\varepsilon}_2$) parts of the complex dielectric function ${\varepsilon}(E)={\varepsilon}_1(E)+i{\varepsilon}_2(E)$, the refractive index n(E), and the extinction coefficient k(E) of CdS thin film were obtained from spectroscopic ellipsometry. The normal-incidence reflectivity R(E) and absorption coefficient ${\alpha}(E)$ of CdS thin film were obtained using the refractive index and extinction coefficient. The critical points $E_0$ and $E_1$ of CdS thin film were shown in spectra of the dielectric function and optical constants of refractive index, extinction coefficient, normal-incidence reflectivity, and absorption coefficient. The dispersion of refractive index was analyzed by the Wemple-DiDomenico single-oscillator model.

• 공업화학
• /
• 제19권1호
• /
• pp.117-121
• /
• 2008

본 연구에서는 정전분무법을 이용하여 YSZ 박막을 제조하였다. 제조된 박막은 제조시 전구체 용액, 지지체 온도 등에 크게 영향을 받았으며, 특히 지지체 온도가 $400^{\circ}C$일 때 치밀한 YSZ 박막을 형성할 수 있었다. 최적조건 하에서 정전분무법을 활용하면 약 $12{\mu}m/h $의 속도로 치밀한 YSZ 박막을 형성할 수 있었다. 제조된 박막은 XRD, FE-SEM, EDX 등을 이용하여 분석하였다.

• 한국표면공학회지
• /
• 제36권2호
• /
• pp.109-115
• /
• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• 한국고분자학회:학술대회논문집
• /
• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
• /
• pp.284-284
• /
• 2006

Electrospray deposited films of poly(vinylidene fluoride) were prepared with various conditions. A model has been developed, which provides the state of the electrosprayed droplet at impact. With a combination of the experimental films and the model calculations, it can be shown that growth rate, the increase of the sprayed solution on the substrate per second, defines the film morphology in electrospray deposition. Growth rate indicates which factors play the main role in the film formation process. The most important factors are liquid flow, surface tension and shear rate. The model can calculate the shear rate and it is shown that PVDF, and most likely polymers in general, has a large range of growth rates, where the morphology only depends on the shear rate of the depositing droplet. This method can also be used to describe electrospray deposition of other compounds.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.295-295
• /
• 2010

Nanoparticles of the compound semiconductor, Cu(In, Ga)Se2 (CIGS), were synthesized in solution under ambient pressure below $100^{\circ}C$ and characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption spectroscopy and energy-dispersive X-ray (EDX) analyses. These materials have chalcopyrite crystal structures and the particle sizes less than 100 nm. Synthetic conditions were studied for the crystallized CIGS nanoparticles formation to prevent from side products of Cu2Se, Cu2-xSe, and CuSe etc. The single phase CIGS nanoparticles were applied to coating of thin films photovoltaic cells. The electro deposition of CIGS thin films is also a good non-vacuum technology and under investigation. In aqueous solutions, the different chemical compositions of CIGS thin films were obtained, depending on pH, concentration of starting materials and deposition potentials. The surface morphology of the prepared CIGS thin films depends on the complexing ligands to the solutions during the electrochemical deposition.

• 한국표면공학회지
• /
• 제29권6호
• /
• pp.720-723
• /
• 1996

The behavior of electrodeposition of amorphous nickel-phosphorus has been studied from the point of deposition mechanism, kinetic parameters, morphology and formation of alloy films. The electorode reaction and electrode kinetics of deposition of nickel were significantly influenced by the content of phosphorus. The cathodic deposition of nickel-phosphorus alloy might be governed by the diffusion process of phosphorous acid. The direction of growth layer of the nickel-phosphorus alloy was different with substrate material. The formation of nickel-phosphorus alloy films was affected considerably by the solution compositions, electrolytic conditions and properties of the material as an underlayer.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2009년도 춘계학술대회 논문집
• /
• pp.177-181
• /
• 2009

Compositional gradient CrNx coatings were fabricated using arc ion plating in Ar/$N_2$ gaseous mixture by gradually increasing $N_2$ flux rate from 0 to 120 SCCM. The effect of negative substrate bias on the film microstructure and mechanical properties were systematically investigated with XRD, GDOES, and SEM. The results show that substrate bias has an important influence on film growth and microstructure of gradient CrNx coatings. The coatings mainly crystallized in the mixture of hexagonal $Cr_{2}N$ and fcc CrN phases. By increasing substrate bias, film microstructure evolved from an apparent columnar structure to an equiaxed one. With increasing substrate bias, deposition rate first increased, and then decreased. The maximum of deposition rate was 15 nm/min obtained at a bias of -50V.

• 한국표면공학회지
• /
• 제32권2호
• /
• pp.172-181
• /
• 1999

The effect of the DMAB concentration, temperature, deposition time, and stabilizer concentration on the precipitation reaction of the electroless nickel plating using dimethylamine borane (DMAB) as reducing agent was investigated to by the weight gain and electrochemical method. The deposition rate was dependent with DMAB concentration. The polarization resistance of the precipitation reaction was reduced with DMAB concentration. The precipitation reaction rate of Ni-B deposits was controlled by the oxidation rate of DMAB as the source of electron. The boron content of the deposit was constant at about 5.5wt%, even when DMAB concentration in the solution was increased. The effect of temperature and stabilizer ($Pb(NO_3)_2$) concentration on deposition rate was shown to have co-dependent behaviors.