• Current Photovoltaic Research
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• 제8권2호
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• pp.60-65
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• 2020

In perovskite solar cells with planar heterojunction configuration, selection of proper charge-transporting layers is very important to achieve stable and efficient device. Here, we developed solution processible Cu doped NiO_x (Cu:NiO_x) thin film as a hole-transporting layer (HTL) in p-i-n structured methylammonium lead trihalide (MAPbI₃) perovskite solar cell. The transmittance and thickness of NiO_x HTL is optimized by control the spin-coating rate and Cu is additionally doped to improve the surface morphology of undoped NiO_x thin film and hole-extraction properties. Consequently, a perovskite solar cell containing Cu:NiO_x HTL with optimal doping ratio of Cu exhibits a power conversion efficiency of 14.6%.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.73-78
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• 2020

There appears lateral capillary force in a hydrophilic flat needle employed for the fabrication of fine organic thin-film stripes, bringing in an increase of the stripe width. It also causes the stripe thickness to increase with increasing coating speed, which is hardly observed in a normal coating process. Through computational fluid dynamics (CFD) simulations, we demonstrate that the lateral capillary flow can be substantially suppressed by increasing the contact angle of the needle end. Based on the simulation results, we have coated the outer surface of the flat needle with a hydrophobic material (polytetrafluoroethylene (PTFE) with the water contact angle of 104°). Using such a hydrophobic needle, we can suppress the lateral capillary flow of an aqueous poly(3,4-ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) to a great extent, rendering the stripe narrow (63 ㎛ at 30 mm/s). Consequently, the stripe thickness is decreased as the coating speed increases. To demonstrate its applicability to solution-processable organic light-emitting diodes (OLEDs), we have also fabricated OLED with the fine PEDOT: PSS stripe and observed the strong light-emitting stripe with the width of about 68 ㎛.

• 센서학회지
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• 제30권5호
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• pp.279-285
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• 2021

Recently, cesium tellurium iodine (Cs₂TeI₆) has emerged as an inorganic halide perovskite material with potential application in optoelectronic devices due to its high absorption coefficient, suitable bandgap and because it consists of nontoxic and earth-abundant elements. However, studies on its fabrication process as well as photoresponse characteristics are limited. In this study, a simple and effective method is introduced for the synthesis of Cs₂TeI₆ thin films by a two-step dry process. A Cs₂TeI₆-based lateral photosensor was fabricated, and its photoresponse characteristics were explored under laser illuminations of four different wavelengths in the visible range: 405, 450, 520, and 655 nm. The initial photosensing results suggest potential application and can lead to more promising studies of Cs₂TeI₆ film in optoelectronics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.354.1-354.1
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• 2016

Nanoporous gold (NPG) is a very promising material in various fields such as sensor, actuator, and catalysis because of its high surface to volume ratio and conducting nature. In this study, we fabricated a NPG based amperometric sensor on a glass substrate by means of co-sputtering of Au and Si. During the sputtering process, we found the optimum conditions for heat treatment to reduce the residual stress and to improve adhesion between NPG films and the glass substrate. Subsequently, Si was selectively etched from Au-Si alloy by KOH solution, which forms nanoporous structures. Scanning electron microscopy (SEM) and auger electron spectroscopy (AES) were used to estimate the structure of NPG films and their composition. By employing appropriate heat treatments, we could make very stable NPG films. We tested the performance of NPG sensor with aniline molecules, which shows high sensitivity for sensing low concentration of aniline.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.49.2-49.2
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• 2010

Polycrystalline CdTe thin films for solar cell continues to be a promising material for the development of cost effective and reliable photovoltaic processes. The two key advantages of this material are its high optical absorption coefficient and its near ideal band gap for photovoltaic conversion efficiency of 1.4-1.5 eV. In this study we made the CdTe thin films for solar cell application which was deposited on the glass substrates using a modified chemical spray method at low temperature. This process does not require the sophisticated and expensive vacuum systems. The prepared CdTe films were characterized with the aid of scanning electron microscope (SEM), UV-visible spectrophotometer, and X-ray diffraction spectrometer (XRD). Following are results of a study on the "Human Resource Development Center for Economic Region Leading Industry" Project, supported by the Ministry of Education, Science & Tehnology(MEST) and the National Research Foundation of Korea(NRF).

• 한국정보통신학회논문지
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• 제5권6호
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• pp.1136-1142
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• 2001

$Zn_xSr_{1-x}S$ 박막을 sputtering법에 의해 제작하여 결정구조, 결합상태, 광학적 특성 등의 분석에 의해 고용체 유무를 판단하고 유전체 이론과 비교.검토하였다. 실험 결과 $0.86~0.93{\leq}x{\leq}1$에서 zincblende구조, $0{\leq}x{\leq}0.29$ 범위에서 rocksalt 구조의 고용체로 되었으며, 이들 영역에서는 격자정수, 결합에너지 및 흡수단은 조성에 따라 거의 직선적으로 변화했다. 상분리 영역을 포함한 miscibility gap은 $0.3{\leq}x{\leq}0.86~0.91$범위에서 존재하고 이 영역에서의 격자정수, 결합에너지 및 흡수단은 경계 조성의 값으로 일정했다. 상전이에 관한 실험결과는 Phillips의 유전이론에 기초한 이온성과 일치하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 추계종합학술대회
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• pp.660-664
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• 2001

$Zn_xSr_{1-x}S$ 박막을 sputtering법에 의해 제작하여 결정구조, 결합상태, 광학적 특성 등의 분석에 의해 고용체 유무를 판단하고 유전체 이론과 비교.검토하였다. 실험결과 $0.86~0.93{\leq}x{\leq}1$에서 zincblende 구조, $0{\leq}x{\leq}0.29$범위에서 rocksalt구조의 고용체로 되었으며, 이들 영역에서는 격자정수, 결합에너지 및 흡수단은 조성에 따라 거의 직선적으로 변화했다. 상분리 영역을 포함한 miscibility gap은 $0.3{\leq}x{\leq}0.86~0.91$범위에서 존재하고 이 영역에서의 격자정수, 결합에너지 및 흡수단은 경계 조성의 값으로 일정했다. 상전이에 관한 실험결과는 Phillips의 유전이론에 기초한 이온성과 일치하였다.

• 한국표면공학회지
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• 제53권4호
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• pp.182-189
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• 2020

Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

• Current Photovoltaic Research
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• 제4권3호
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• pp.108-113
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• 2016

III-V compound semiconductor based thin film solar cells promise relatively higher power conversion efficiencies and better device reliability. In general, the thin film III-V solar cells are fabricated by an epitaxial lift-off process, which requires an $Al_xGa_{1-x}As$ ($x{\geq}0.8$) sacrificial layer and an inverted solar cell structure. However, the device performance of the inversely grown solar cell could be degraded due to the different internal diffusion conditions. In this study, InGaP/GaAs double-junction solar cells are inversely grown by MOCVD on GaAs (100) substrates. The thickness of the GaAs base layer is reduced to minimize the thermal budget during the growth. A wide band gap p-AlGaAs/n-InGaP tunnel junction structure is employed to connect the two subcells with minimal electrical loss. The solar cell structures are transferred on to thin metal films formed by Au electroplating. An AlAs layer with a thickness of 20 nm is used as a sacrificial layer, which is removed by a HF:Acetone (1:1) solution during the epitaxial lift-off process. As a result, the flexible InGaP/GaAs solar cell was fabricated successfully with an efficiency of 27.79% under AM1.5G illumination. The efficiency was kept at almost the same value after bending tests of 1,000 cycles with a radius of curvature of 10 mm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.351.1-351.1
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• 2014

In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.