• Title/Summary/Keyword: solar thermal energy

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Evaluation of Lateral Load Resistance and Heating/Cooling/Lighting Energy Performance of a Post-disaster Refugees Housing Using Lightweight composite Panels (경량 복합패널을 활용한 구호주거의 횡하중 저항성능 및 냉난방조명 에너지성능 평가)

  • Hwang, Moon-Young;Lee, Byung-Yun;Kang, Su-Min;Kim, Sung-Tae
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.3
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    • pp.252-262
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    • 2019
  • Following the earthquake in Gyeongju (2016) and Pohang (2017), South Korea is no longer a safe place for earthquakes. Accordingly, the need for shelters suitable for disaster environments is increasing. In this study, a lightweight composite panel was used to produce post-disaster housing for refugees to compensate for the disadvantages of existing evacuation facilities. For this purpose, an evaluation of structural performance and thermal environment for post-disaster housing for refugees composed of lightweight composite panels was performed. To assess the structural performance, a lateral loading test was conducted on a system made of lightweight composite panels. The specimens consisted of two types, which differed according to the bonding method, as a variable. In addition, the seismic and wind loads were calculated in accordance with KBC 2016 and compared with the experimental results. Regarding the energy performance, optimization of south-facing window planning and window-wall ratio and solar heat gain coefficient were analyzed to minimize heating, cooling, and lighting energy. As a result, the specimens composed of lightweight composite panels will perform sufficiently safely for lateral loads and the optimized window planning will lead to a low-energy operation.

Transparent Near-infrared Absorbing Dyes and Applications (투명 근적외선 흡수 염료 및 응용 분야)

  • Hyocheol Jung;Ji-Eun Jeong;Sang-Ho Lee;Jin Chul Kim;Young Il Park
    • Applied Chemistry for Engineering
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    • v.34 no.3
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    • pp.207-212
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    • 2023
  • Near-infrared (NIR) absorbing dyes have been applied to various applications such as optical filters, biotechnology, energy storage and conversion, coating additive, and traditionally information-storage materials. Because image sensors used in cellphones and digital cameras have sensitivity in the NIR region, the NIR cut-off filter is essential to achieving more clear images. As energy storage and conversion have been important, diverse NIR absorbing materials have been developed to extend the absorption region to the NIR region, and NIR absorbing materials-based research has proceeded to improve device performances. Adding NIR-absorbing dye with a photo-thermal effect to a self-healable coating system has been attractive for future mobility technology, and more effective self-healing properties have been reported. In this report, the chemical structures of representative NIR-absorbing dyes and state of the art research based on NIR-absorbing dyes are introduced.

The Technology Development Trends of Supercritical CO2 Power Generation (초임계 CO2 발전 기술개발 동향)

  • Kim, Beom-Ju
    • KEPCO Journal on Electric Power and Energy
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    • v.2 no.4
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    • pp.531-536
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    • 2016
  • The worldwide research and development for high-efficiency power generation system is progressing steadily because of the growing demand for reducing greenhouse gas emissions. Many countries have spurred the research and development of supercritical $CO_2$ power generation technology since 2000 because it has the advantage of compactness, efficiency, and diversity. Supercritical $CO_2$ power generation system can be classified into an indirect heating type and a direct heating type. As of now, most studies have concentrated on the development of indirect type supercritical $CO_2$ power generation system. In the United States, NREL(National Renewable Energy Lab.) is developing supercritical $CO_2$ power generation system for Concentrating Solar Power. In addition, U.S. DOE(Department of Energy) also plans to start investing in the development of the supercritical $CO_2$ power generation system for coal-fired thermal power plant this year. GE is developing not only 10MW supercritical $CO_2$ power generation turbomachinery but also the conceptual design of 50MW and 450MW supercritical $CO_2$ power generation turbomachinery. In Korea, the Korean Atomic Energy Research Institute has constructed the supercritical $CO_2$ power generation test facility. Moreover, KEPRI(Korea Electric Power Research Institute) is developing a 2MW-class supercritical $CO_2$ power generation system using diesel and gas engine waste heat with Hyundai Heavy Industries.

A Study on An Integrated GEO/TES with Geothermal Heat Exchanger and Thermal Ice Storage (지중열 교환기와 빙축열조(Thermal Ice Storage)를 연계시킨 통합 지중열-빙축열조 시스템(Integrated GEO/TES))

  • Lohrenz ED.;Hahn Jeongsang;Han Hyuk Sang;Hahn Chan;Kim Hyoung Soo
    • Economic and Environmental Geology
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    • v.38 no.6 s.175
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    • pp.717-729
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    • 2005
  • Peak cooling load of large buildings is generally greater than their peak heating load. Internal and solar heat gains are used fur selection of adquate equipment in large building in cold winter climate like Canada and even Korea. The cost of geothermal heat exchanger to meet the cooling loads can increase the initial cost of ground source heat pump system to the extend less costly conventional system often chosen. Thermal ice storage system has been used for many years in Korea to reduce chiller capacity and shift Peak electrical time and demand. A distribution system designed to take advantage of heat extracted from the ice, and use of geothermal loop (geothermal heat exchanger) to heat as an alternate heat source and sink is well known to provide many benifits. The use of thermal energy storage (TES) reduces the heat pump capacity and peak cooling load needed in large building by as much as 40 to $60\%$ with less mechanical equipment and less space for mechanical room. Additionally TES can reduce the size and cost of the geothermal loop by 1/3 to 1/4 compared to ground coupled heat pump system that is designed to meet the peak heating and cooling load and also can eliminate difficuties of geothermal loop installation such as space requirements and thermal conditions of soil and rock at the urban area.

A Modeling for Li-Ion Battery Performance Analysis of GEO Satellite (정지궤도 인공위성 리튬-이온 배터리 성능 해석을 위한 모델링)

  • Koo, Ja-Chun;Ra, Sung-Woong
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.42 no.2
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    • pp.150-157
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    • 2014
  • Li-Ion battery is used in the most satellites now due to advantages such as weight, thermal dissipation and self discharge compared to the previous generations of electrochemical batteries. The performance analysis model of the Li-Ion battery is needed to aid the design of new satellite electrical power subsystem. This paper develops the performance analysis model of the Li-Ion battery to apply to the electrical power subsystem design and energy balance analysis on geostationary orbit. The analysis model receives the satellite bus power, solar array power and battery temperature and gives the battery voltage, charge and discharge currents, taper index, state of charge and power dissipation. The results from the performance analysis are compared and analyzed with the flight data to verify the model. The compared results show satisfactory without significant difference with the flight data.

Thermal Performance of PV Cells Exposed to Irradiation by a Parabolic Trough Concentrator (PTC형 태양열 집열기로 조사되는 PV cell의 열적 성능)

  • Hwang, Seon Yeob;Kang, Tae Gon;Boo, Joon Hong
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.68-68
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    • 2011
  • 본 연구에서는 PV cell이 직달 일사에 노출되는 경우와 집광된 태양광에 조사되는 경우의 성능을 비교하는 한편 집광기의 형태에 따른 열적 성능을 검토하고자 하였다. PV cell은 본질적으로 반도체의 특성을 가지므로 작동온도의 상승에 따라 성능이 저하된다는 사실이 알려져 있으며, 태양조사의 강도 및 밀도 등 특성에 따라서도 성능의 변화를 예상할 수 있다. 그러나 이러한 성능변화에 관련된 인자들과 그 영향의 크기에 대한 정량적인 기술자료가 부족하므로 설치와 이용에 한계가 있는 것이 현실이다. 인공태양 장치(solar simulator)를 이용하여 0.7에서 1.2 sun 범위의 태양 조사 환경에서 결정질 실리콘계 PV cell과 집광형 PV cell의 성능을 검토하였다. 집광에 사용한 PTC는 집광면적의 폭이 500 mm이며, 집광 조사면적이 최소 10 mm인 경우 이론적 최대 집광비가 50이었다. PTC의 축방향으로는 균일한 태양조사가 있게된다는 것을 가정하여 모델의 길이는 간편한 실험을 위해 150에서 500 mm의 범위에서 제작하였다. 수평으로 놓인 PTC의 상부 초점 위치로부터 집광면이 아래 쪽에 위치할수록 집광 조사 면적이 증가하므로 PV cell의 크기에 따라 PTC 초점의 위치로부터 거리를 결정하였다. 한편, PTC 자체의 성능도 촛점거리와 집광면 폭의 비에 따라 달라질 수 있다는 가정 하에, 포물면의 최저 위치로부터 촛점거리는 각각 300, 400 및 500 mm가 되도록 세가지 형태를 제작하여 사용하였다. 동일한 형태의 PTC에서 PV cell의 동일한 설치 위치에서도 최고 $110^{\circ}C$ 범위의 PV cell의 작동 (표면) 온도에 따른 성능의 차이를 관찰하기 위해 셀의 후면을 냉각시키는 경우와 그렇지 않은 경우를 비교하였다. PV cell의 표면 온도 측정을 위해서, 후면의 온도와 같이 광선 차단 효과의 우려가 없는 경우에는 열전대를 설치하였으며, 셀의 전면 온도 측정을 위해서는 비접촉식 적외선 온도계를 사용하였다. 냉각 방법으로는 공기를 이용한 자연대류와 액체를 사용하는 강제대류의 경우를 고려하였으며, 필요에 따라 적절히 설계된 히트싱크를 설치하여 비교 실험을 진행하였다. 강제대류 냉각의 경우는 항온조를 사용하여 순환하는 냉각수의 유량과 공급온도를 변화시킴으로써 PV cell의 작동온도를 조절하고, 이에 따른 발전 성능의 변화를 관찰하였다. 본 연구에서 도출한 실험 및 분석 결과는 PV cell의 설치 환경과 작동온도의 변화에 따라 그 성능 변화를 예측할 수 있는 기술적 자료를 제공함으로써 에너지 이용의 합리화를 도모하는데 기여할 수 있을 것이다.

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Fabrication of Transparent Electrode Film for Organic Photovoltaic using Ag grid and Conductive Polymer (Ag grid와 전도성 고분자를 이용한 인쇄기반 OPV용 투명전극 형성)

  • Yu, Jongsu;Kim, Jungsu;Yoon, Sungman;Kim, Dongsoo;Kim, Dojin;Jo, Jeongdai
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.116.1-116.1
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    • 2011
  • Materials with a combination of high electrical conductivity and optical transparency are important components of many electronic and optoelectronic devices such as liquid crystal displays, solar cells, and light emitting diodes. In this study, to fabricate a low-resistance and high optical transparent electrode film for organic photovoltaic, the following steps were performed: the design and manufacture of an electroforming stamp mold, the fabrication of thermal roll imprinted (TRI) poly-carbonate (PC) patterned films, the manufacture of high-conductivity and low-resistance Ag paste which was filled into patterned PC film using a doctor blade process and then coated with a thin film layer of conductive polymer by a spin coating process. As a result of these imprinting processes the PC films obtained a line width of $10{\pm}0.5{\mu}m$, a channel length of $500{\pm}2{\mu}m$, and a pattern depth of $7.34{\pm}0.5{\mu}m$. After the Ag paste was used to fill part of the patterned film with conductive polymer coating, the following parameters were obtained: a sheet resistance of $9.65{\Omega}$/sq, optical transparency values were 83.69 % at a wavelength of 550 nm.

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Development of Surface Cleaning Techniques for Analysis of Electronics Structure in CuInSe2, CuGaSe2 Solar Cell Absorber Layer (태양전지용CuInSe2와 CuGaSe2 흡수층의 전자구조해석을 위한 표면 청정기술 개발)

  • Kim, Kyung-Hwan;Choi, Hyung-Wook;Kong, Sok-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.2
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    • pp.125-129
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    • 2005
  • Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

The Effects of Doping Hafnium on Device Characteristics of $SnO_2$ Thin-film Transistors

  • Sin, Sae-Yeong;Mun, Yeon-Geon;Kim, Ung-Seon;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.199-199
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    • 2011
  • Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

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Ga Distribution in Cu(In,Ga)Se2 Thin Film Prepared by Selenization of Co-Sputtered Cu-In-Ga Precursor with Ga2Se3 Layer (Ga2Se3 층을 Cu-In-Ga 전구체 위에 적용하여 제조된 Cu(In,Ga)Se2 박막의 Ga 분포 변화 연구)

  • Jung, Gwang-Sun;Shin, Young-Min;Cho, Yang-Hwi;Yun, Jae-Ho;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.20 no.8
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    • pp.434-438
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    • 2010
  • The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.