• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.871-876
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• 2014

Efficiency of crystalline Si solar cell can be maximized as minimizing optical loss through antireflection texturing with inverted pyramids. Even if cost-competitive, soft lithography can be employed instead of photolithography for the purpose, some limitations still remain to apply the soft lithography directly to as-received solar grade wafer with a bunch of micro trenches on surface. Therefore, it is needed to develop a low-cost, effective planarization process and evaluate its output to be applicable to patterning process with PDMS stamp. In this study new surface planarization process is proposed and the change of micro scale trenches on the surface as a function of etching time is observed. Also, the effect of trenches on pattern quality by soft lithography is investigated using FEM structural analysis. In conclusion it is clear that the geometry and shape of trenches would be basic considerations for soft lithography application to low quality wafer.

• Journal of Magnetics
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• 제13권2호
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• pp.53-56
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• 2008

This study proposes a simple nano-patterning process for the fabrication of magnetic nanodot arrays on a large area substrate. Ni nanodots were fabricated on a large area (4 inches in diameter) Si substrate using the soft lithographic technique using self-assembled surface micelles of Polystyrene-block-Poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer formed at the air/water interface as a mask. The hexagonal array of micelles was successfully transferred to a Ni thin film on a Si substrate using the Langmuir-Blodgett technique. After ion-mill dry etching, a magnetic Ni nanodot array with a regular hexagon array structure was obtained. The Ni nanodot array showed in-plane easy axis magnetization and typical soft magnetic properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.410.1-410.1
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• 2014

A soft-lithographic top-down approach is combined with an epitaxial layer transfer process to fabricate high quality III-V compound semiconductor nanowires (NWs) and integrate them on Si/SiO2 substrates, using MBE-grown ultrathin InAs as a source wafer. The channel width of the InAs nanowires is controlled by using solvent-assisted nanoscale embossing (SANE), descumming, and etching processes. By optimizing these processes, the NW width is scaled to less than 50 nm, and the InAs NWFETs has ${\sim}1,600cm^2/Vs$ peak electron mobility, which indicates no mobility degradation due to the size.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.13-14
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• 2006

The use of soft-lithography instead of standard photolithography and dry etching technologies is attractive because inexpensive optical device can be realized. Polymerization using multi-photon absorption of materials is also a good method for optical waveguide fabrication. Laser induced self-writing technology of optical waveguide is also very simple and attractive. Using these processes, we can fabricate and interconnect optical circuits at once. In this presentation, several simple fabrication methods will be introduced. New optical loss evaluation method for polymer optical waveguides will also be presented

• Bulletin of the Korean Chemical Society
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• 제33권1호
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• pp.83-89
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• 2012

Due to the potential importance and usefulness, usage of highly ordered nanoporous anodized aluminum oxide can be broadened in industry, when highly ordered anodized aluminum oxide can be placed on a substrate with controlled thickness. Here we report a facile route to highly ordered nanoporous alumina with the thickness of hundreds-of-nanometer on a silicon wafer substrate. Hexagonally or tetragonally ordered nanoporous alumina could be prepared by way of thermal imprinting, dry etching, and anodization. Adoption of reusable polymer soft molds enabled the control of the thickness of the highly ordered porous alumina. It also increased reproducibility of imprinting process and reduced the expense for mold production and pattern generation. As nanoporous alumina templates are mechanically and thermally stable, we expect that the simple and costeffective fabrication through our method would be highly applicable in electronics industry.

• 공업화학
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• 제24권5호
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• pp.562-565
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• 2013

고순도의 알루미늄 호일은 전기화학적 에칭을 통해 표면적을 증가시킨 후 전해 커패시터의 양극으로 사용된다. 그러나 산화 피막의 결함 및 에치 피트의 불규칙 생성에 의해 성장된 에치 피트의 분포는 불균일하며 이러한 불균일 형태는 알루미늄 넓은 표면적 분포에도 불구하고 여러 형태의 적용을 어렵게 만든다. 본 연구에서는 알루미늄의 선택적 에칭을 위해 포토리소그래피 방법으로 제작된 패턴 마스크를 사용하여 알루미늄 표면에 균일성을 갖는 보호층을 형성시켰다. 균일한 패턴을 갖는 알루미늄을 용액의 온도 및 전류밀도 등의 조건을 변경하여 실험하였고, 알루미늄 표면에 다양한 크기($2{\sim}5{\mu}m$)의 균일성을 갖는 에치 피트의 형성을 확인할 수 있었다.

• 한국진공학회지
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• 제19권4호
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• pp.300-306
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• 2010

소수성 고분자를 사용하여 제작한 마이크로구조에 금 나노입자를 마스크로 이용하는 반응성이온식각(RIE: Reactive Ion Etching)을 적용하여 초소수성을 갖는 마이크로-나노 혼성구조를 제작하였다. 소수성 고분자로는 PFPE (perfluoropolyether bisurethane methacrylate)를 사용하였으며 마이크로 단일구조는 PDMS (polydimethylsiloxane) 몰드를 사용하는 스탬핑 방식으로 제작하였다. 다양한 형태로 제작한 PFPE 마이크로 단일구조와 마이크로-나노 혼성구조의 표면 접촉각을 측정하여 표면 미세구조에 따른 소수성의 변화를 관찰하였다. 마이크로 단일구조의 경우 접촉각은 안정적인 값을 보이지 못하였으나 단일 구조에 나노입자를 사용한 식각을 적용해 나노구조가 형성됨에 따라 $150^{\circ}$ 이상의 접촉각을 갖는 초소수성 표면이 매우 높은 재현성으로 용이하게 형성되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.16.1-16.1
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• 2011

$TiO_2$ is a promising material for gas sensors. To achieve high sensitivities, the material should exhibit a large surface-to-volume ratio and possess the high accessibility of the gas molecules to the surface. Accordingly, a wide variety of porous $TiO_2$ nanomaterials synthesized by wet-chemical methods have been reported for gas sensor applications. Nonetheless, achieving the large-area uniformity and comparability with well-established semiconductor production processes of the methods is still challenging. An alternative method is soft-templating which utilizes nanostructured inorganic or organic materials as sacrificial templates for the preparation of porous materials. Fabrication of macroporous $TiO_2$ films and hollow $TiO_2$ tubes by soft-templating and their gas sensing applications have been reported recently. In these porous materials composed of assemblies of individual micro/nanostructures, the form of links or necks between individual micro/nanostructures is a critical factor to determine gas sensing properties of the material. However, a systematic study to clarify the role of links between individual micro/nanostructures in gas sensing properties of a porous metal oxide matrix is thoroughly lacking. In this work, we have demonstrated a fabrication method to prepare highly-ordered, embossed $TiO_2$ films composed of anatase $TiO_2$ hollow hemispheres via soft-templating using polystyrene beads. The form of links between hollow hemispheres could be controlled by $O_2$ plasma etching on the bead templates. This approach reveals the strong correlation of gas sensitivity with the form of the links. Our experimental results highlight that not only the surface-to-volume ratio of an ensemble material composed of individual micro/nanostructures but also the links between individual micro/nanostructures play a critical role in evaluating the sensing properties of the material. In addition to this general finding, the facileness, large-scale productivity, and compatability with semiconductor production process of the proposed fabrication method promise applications of the embossed $TiO_2$ films to high-quality sensors.

• 한국정밀공학회지
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• 제31권11호
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• pp.969-974
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• 2014

Previously fabricated electronic devices were used for vacuum manufacturing processes such as conventional semiconductor manufacturing. However, they are difficult to apply to continuous processes such as roll-to-roll printing, which results in very high device manufacturing and processing costs. Therefore, many developers have been interested in applying continuous processes to contact printing or noncontact printing technologies and they proposed various continuous printing techniques instead of conventional batch coating. In this paper, we proposed improved gravure offset printing process as one of the contact printing technique. We used etching pattern geometry with soft core blanket roll for printing of ultra fine line below the 10um.Using this technique we obtained flexible metal grid mesh film as transparent conductive film.