• Title/Summary/Keyword: small-swing circuit

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Design of High Performance Full-Swing BiCMOS Logic Circuit (고성능 풀 스윙 BiCMOS 논리회로의 설계)

  • Park, Jong-Ryul;Han, Seok-Bung
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.30B no.11
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    • pp.1-10
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    • 1993
  • This paper proposes a High Performance Full-Swing BiCMOS (HiF-BiCMOS) circuit which improves on the conventional BiCMOS circuit. The HiF-BiCMOS circuit has all the merits of the conventional BiCMOS circuit and can realize full-swing logic operation. Especially, the speed of full-swing logic operation is much faster than that of conventional full-swing BiCMOS circuit. And the number of transistors added in the HiF-BiCMOS for full-swing logic operation is constant regardless of the number of logic gate inputs. The HiF-BiCMOS circui has high stability to variation of environment factors such as temperature. Also, it has a preamorphized Si layer was changed into the perfect crystal Si after the RTA. Remarkable scalability for power supply voltage according to the development of VLSI technology. The power dissipation of HiF-BiCMOS is very small and hardly increases about a large fanout. Though the Spice simulation, the validity of the proposed circuit design is proved.

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A New Small-Swing Domino Logic based on Twisted Diode Connections (트위스티드 다이오드 연결 구조를 이용한 저전압 스윙 도미노 로직)

  • Ahn, Sang-Yun;Kim, Seok-Man;Jang, Young-Jo;Cho, Kyoungrok
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.4
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    • pp.42-48
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    • 2014
  • In this paper, we propose a new small swing domino logic that reduces the swing amplitude by using twist-connected PMOS and NMOS transistors. The output swing range of the proposed circuit is adjusted by the size of the twist-connected transistors and the load capacitance. The designed RCA with the proposed circuit technique shows reduction of the power consumption by 37% and PDP performance by 43% compared with the domino CMOS logic.

Design of a Small Form Factor Swing Arm type Actuator using Design of Experiments (실험계획법을 이용한 초소형 스윙암 액추에이터의 설계)

  • Park Chul;Yoo Jeong-Hoon;Park No-Ceol
    • Proceedings of the Computational Structural Engineering Institute Conference
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    • 2006.04a
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    • pp.813-819
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    • 2006
  • The state of the art for the design of swing ann actuators for optical disc drives is to obtain the high efficient dynamic characteristics, especially for the small size for the mobile information devices, It is affected by the need of consumers who wants the portable digital storage devices maintaining highly functional and removable characteristics of the optical disk drive (ODD). As a necessary consequence, the need of the small form factor (SFF) storage device has been considered as an important part in the information storage technology. In this paper. we suggest a new conceptual miniaturized swing arm type actuator that has high efficient dynamic characteristics as well as satisfies the sensitivity and the heat emission requirements for the SFF-ODD. It also uses a tracking electromagnetic (EM) circuit for a focusing motion. Due to the size constraint, the thermal problem of optical head arises; therefore, we design an efficiently heat emitted structure for the actuator.

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Structural design of small form factor swing arm type actuators with thermal stability (열안정성을 고려한 초소형 정보저장기기용 액추에이터 구조설계)

  • Park, Chul;Yoo, Jeong-Hoon;Park, No-Cheol;Park, Young-Pil;Shimano, Takeshi;Nakamura, Shigeo
    • Transactions of the Society of Information Storage Systems
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    • v.2 no.3
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    • pp.208-213
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    • 2006
  • The present state of the design of swing arm actuators for optical disc drives is to obtain the high efficient dynamic characteristics within a very compact volume. As a necessary consequence, the need of the small form factor (SFF) storage device has been arisen as major interests in the information storage technology. In this paper, we suggest the miniaturized swing arm type actuator that has high efficient dynamic characteristics for SFF optical disk drive (ODD). For the operating mechanism, it uses a tracking electromagnetic (EM) circuit for a focusing motion together. Moreover, due to the size constraint, the thermal stability of optical head is important. Therefore, the actuator is designed to emit the heat, which is generated by optical pick-up, along the actuator body easily. Initial model is designed based on the topology optimization method considering the thermal conductivity. Then, the structural parts of the actuator are modified to maintain the high sensitivity and to have wide control bandwidth by the design of experiments method (DOE) and new concept of decreasing mass and inertia. Finally, a swing arm type actuator for SFF ODD is suggested and its dynamic characteristics are verified.

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Design of Swing Arm Type's for Small Sized ODD (초소형 광디스크 드라이브를 위한 스윙암 타입 엑추에이터 설계)

  • Oh, Je-Seung;Park, Se-June;Lee, Dong-Ju;Jung, Ho-Seop;Park, No-Cheol;Park, Young-Pil
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2004.11a
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    • pp.70-74
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    • 2004
  • There are many researches being in process to develop the information storage devices applying to the portable devices recently. Based on this need, the information storage devices have to be satisfied with the fast access time, the robustness of the system, high data transfer rate and lower media price. The total size of the drive must design to adapt the portable devices such as CF II card or PC II card size. This paper proposes the swing arm type actuator to insert the designed actuator in the drive of the CF II size. Hereafter the research will be going on to be suitable to the physical standard and design the focus magnetic circuit newly. The swing arm type actuator including this circuit is designed to have the dynamic characteristic satisfying the mechanical specification as well as the BD 1x. Finally, the adaptability to the portable devices was demonstrated by the finite element analysis and optimization of structural part.

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A Novel Sensing Circuit for 2T-2MTJ MRAM Applicable to High Speed Synchronous Operation

  • Jang, Eun-Jung;Lee, Jung-Hwa;Kim, Ji-hyun;Lee, Seungjun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.3
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    • pp.173-179
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    • 2002
  • We propose a novel sensing circuit for 2T-2MTJ MRAM that can be used for high speed synchronous operation. Proposed bit-line sense amplifier detects small voltage difference in bit-lines and develops it into rail-to-rail swing while maintaining small voltage difference on TMR cells. It is small enough to fit into each column that the whole data array on selected word line are activated as in DRAMs for high-speed read-out by changing column addresses only. We designed a 256Kb read-only MRAM in a $0.35\mu\textrm{m}$ logic technology to verify the new sensing scheme. Simulation result shows a 25ns RAS access time and a cycle time shorter than 10 ns.

Implementation of a Low Power and Reduced EMI Signaling Circuit For a LCD Controller-to-Source Driver Interface

  • Choi, Chul-Ho;Choi, Myung-Ryul
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.167-168
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    • 2000
  • We propose a signaling circuit that can reduce power consumption and Electromagnetic Interference (EMI) in a Liquid Crystal Display (LCD) controller-to-source driver interface. The proposed signaling circuit consists of a coder/decoder that can minimize temporal bit transitions in a transmission line and a current-mode driver that can convert voltage swing into a very small amount of current. We have simulated the proposed signaling circuit using the HSPICE and the proposed signaling circuit has been designed in a 0.25 ${\mu}m$ CMOS technology.

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Halbach Array Type Focusing Actuator for Small and Thin Optical Data Storage Device (할바 자석배열을 이용한 초소형 정보저장장치의 초점 구동기 설계)

  • Lee, Sung-Q;Park, Kang-Ho;Paek, Mun-Cheal
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2004.11a
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    • pp.65-69
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    • 2004
  • The small form factor optical data storage devices are developing rapidly nowadays. Since it is designed for portable and compatibility with flash memory, its components such as disk, head, focusing actuator, and spindle motor should be assembled within 5 m thickness. The thickness of focusing actuator is within 2 mm and the total working range is $+/-100{\mu}m$, with the resolution of less than $1{\mu}m$. Since the thickness is limited tightly, it is hard to place the yoke that closes the magnetic circuit and hard to make strong flux density without yoke. Therefore, Halbach array is adopted to increase the magnetic flux of one side without yoke. The proposed Halbach array type focusing actuator has the advantage of thin actuation structure with sacrificing less flux density than conventional magnetic array. The optical head unit is moved on the swing arm type tracking actuator. Focusing coil is attached to swing arm, and Halbach magnet array is positioned at the bottom of deck along the tracking line, and focusing actuator exerts force by the Fleming's left hand rule. The working range and resolution of focusing actuator are analyzed with FEM and experiment.

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Design of Low-Area DC-DC Converter for 1.5V 256kb eFlash Memory IPs (1.5V 256kb eFlash 메모리 IP용 저면적 DC-DC Converter 설계)

  • Kim, YoungHee;Jin, HongZhou;Ha, PanBong
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.15 no.2
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    • pp.144-151
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    • 2022
  • In this paper, a 1.5V 256kb eFlash memory IP with low area DC-DC converter is designed for battery application. Therefore, in this paper, 5V NMOS precharging transistor is used instead of cross-coupled 5V NMOS transistor, which is a circuit that precharges the voltage of the pumping node to VIN voltage in the unit charge pump circuit for the design of a low-area DC-DC converter. A 5V cross-coupled PMOS transistor is used as a transistor that transfers the boosted voltage to the VOUT node. In addition, the gate node of the 5V NMOS precharging transistor is made to swing between VIN voltage and VIN+VDD voltage using a boost-clock generator. Furthermore, to swing the clock signal, which is one node of the pumping capacitor, to full VDD during a small ring oscillation period in the multi-stage charge pump circuit, a local inverter is added to each unit charge pump circuit. And when exiting from erase mode and program mode and staying at stand-by state, HV NMOS transistor is used to precharge to VDD voltage instead of using a circuit that precharges the boosted voltage to VDD voltage. Since the proposed circuit is applied to the DC-DC converter circuit, the layout area of the 256kb eFLASH memory IP is reduced by about 6.5% compared to the case of using the conventional DC-DC converter circuit.

Accuracy Enhancement Technique in the Current-Attenuator Circuit (전류 감쇠 조정 회로에서의 정밀도 향상 기술)

  • Kim, Seong-Kweon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.19 no.8
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    • pp.116-121
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    • 2005
  • To realize the tap coefficient of a finite impulse response(FIR) filter or the twiddle factor of a fast Fourier transform(FFT) using a current-mode analog circuit, a high accurate current-attenuator circuit is needed This paper introduces an accuracy enhancement technique in the current-mode signal processing. First of all, the DC of set-current error in a conventional current-attenuator using a gate-ratioed orient mirror circuit is analyzed and then, the current-attenuator circuit with a negligibly small DC offset-current error is introduced. The circuit consists of N-output current mirrors connected in parallel with me another. The output current of the circuit is attenuated to 1/N of the input current. On the basis of the Kirchhoff current law, the current scale ratio is determined simply by the number of the current mirrors in the N-current mirrors connected in parallel. In the proposed current-attenuator circuit the scale accuracy is limited by the ac gain error of the current mirror. Considering that a current mirror has a negligibly small ac gain error, the attainable maximum scale accuracy is theoretically -80[dB] to the input current.