• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부A
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• pp.201-203
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• 1998

This paper presents the framework for analysis of small-signal stabili1ty. In this framework the equilibrium points of system DAE model are traced using continuation method and instability points are determined on the solution path. Especially Implicit shift QR-modified ARnoldi method is utilized to calculated the rightmost eigenvalues. ISPS measure is utilized to determine critical parameters.

• 한국전자통신학회논문지
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• 제9권8호
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• pp.853-859
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• 2014

본 연구에서는 핀치오프 된 cold-FET에서 게이트와 드레인 패드를 디임베딩하여 얻어지는 Z-파라미터와 게이트와 드레인 패드 커패시턴스를 제외한 핀치오프 된 cold-FET의 나머지 파라미터에 의해 모델링되는 Z-파라미터 사이의 잔차 오차를 최소화함으로써 HEMT의 모든 외인성 파라미터를 추출하는 기법을 제시한다. 제시된 기법을 사용하면 게이트와 드레인 모조패드의 추가적 제작 없이 게이트와 드레인 패드의 커패시턴스 값뿐 아니라 나머지 외인성 파라미터 값 모두를 성공적으로 추출할 수 있다.

• 한국공간구조학회논문집
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• 제20권1호
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• pp.95-102
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• 2020

The structural design of arch roofs or bridges requires the analysis of their unstable behaviors depending on certain parameters defined in the arch shape. Their maintenance should estimate the parameters from observed data. However, since the critical parameters exist in the equilibrium paths of the arch, and a small change in such the parameters causes a significant change in their behaviors. Thus, estimation to find the critical ones should be carried out using a global search algorithm. In this paper we study the parameter estimation for a shallow arch by a quantum-inspired evolution algorithm. A cost functional to estimate the system parameters included in the arch consists of the difference between the observed signal and the estimated signal of the arch system. The design variables are shape, external load and damping constant in the arch system. We provide theoretical and numerical examples for estimation of the parameters from both contaminated data and pure data.

• 한국정보통신학회논문지
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• 제7권4호
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• pp.743-749
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• 2003

본 논문에서는, cold-HEMT의 게이트에 핀치오프 전압보다 약간 낮은 전압을 가함으로써 게이트 손상문제로부터 자유로우며 부가적인 DC 측정을 필요로 하지 않는 새로운 HEMT 소신호 모델링 방법을 제시한다. 제시된 방법에 의해서 모델링된 회로의 S-파라미터 이론치는 49개의 동작 바이어스점에서 측정치와 62GHz까지 뛰어난 일치를 보였다.

• 대한전기학회논문지:전력기술부문A
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• 제52권9호
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• pp.487-492
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• 2003

This paper analyzes an eigenvalue distribution and enhancement of the small signal stabiligy when an Unified Power Flow Controller (UPFC) modeling is connected into the multi-machine power system. Recently a lot of attention has been paid to the subject of dynamic stability. It deals with analysis of eigenvalue sensitivities with respect to parameters of UPFC Controller and damping of interarea and local electromechanical oscillation modes using UPFC Controller. It provides an insight and understanding in the basic characteristics of damping effects of UPFC Controller and shows a very stable frequency response via UPFC in test model. The series branch of the UPFC is designed to damp the power oscillation during transients, while the shunt branch aims at maintaining the bus voltage and angle. Comprehensive time-domain simulation studies using PSS/E show that the proposed robost UPFC controller can enhance the small signal stability efficiently in spite of the variations of power system operating conditions.

• 대한전자공학회논문지SD
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• 제41권12호
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• pp.21-26
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• 2004

본 논문에서는 package된 BJT의 RF 등가회로 모델을 optimization과정 없이 직접 추출하는 방법을 개발하였다. 먼저, open 과 short package 구조를 사용하여 plastic package의 기생성분을 측정된 S-파라미터로부터 정확히 제거하였다. 이와 같이 package do-embedding된 S-파라미터로부터 package lead와 chip pad 사이의 bonding wire 인덕턴스와 chip pad 캐패시턴스를 직접 추출하는 간단한 방법을 구축하였다. 그 후에 내부 BJT소자의 소신호 모델변수들은 RF 등가회로로부터 유도된 Z나 Y-파라미터 방정식을 이용하여 결정하였다. 이 방법으로 모델화된 packaged BJT의 S-파라미터는 측정 데이터와 아주 잘 일치하였으며 이는 새로운 추출방법의 정확성을 증명한다.

• Journal of Power Electronics
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• 제9권5호
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• pp.757-771
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• 2009

This paper proposes a systematic approach to the modeling of the small-signal characteristics of three-phase bridge boost rectifiers under non-sinusoidal conditions. The main obstacle to the conventional synchronous d-q frame modeling approach is that it is unable to identify a steady-state under non-sinusoidal conditions. However, for most applications under non-sinusoidal conditions, the current loops of boost rectifiers are designed to have a bandwidth that is much higher than typical harmonics frequencies in order to achieve good current control for these harmonic components. Therefore a quasi-static method is applied to the proposed modeling approach. The converter small-signal characteristics developed from conventional synchronous frame modeling under different operating points are investigated and a worst case point is then located for the current loop design. Both qualitative and quantitative analyses are presented. It is observed that operating points influence the converter low frequency characteristics but hardly affect the dominant poles. The relationship between power stage parameters, system poles and zeroes is also presented which offers good support for the system design. Both the simulation and experimental results verified the analysis and proposed modeling approach. Finally, the practical case of a parallel active power filter is studied to present the modeling approach and the resultant regulator design procedure. The system performance further verifies the whole analysis.

• 조명전기설비학회논문지
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• 제17권3호
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• pp.127-137
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• 2003

논문에서는 대규모 계통의 미소신호안전도 평가 및 해석을 위해 고유치 감도/perturbation 이론에 근거한 상정사고 지표를 제안하였으며 이를 실제 계통에 적용한 결과를 기술하였다. 선로정수와 제어기점수에 대한 미소신호 안정도 상정사고 지표를 제시하였고 이로부터 심각한 저주파진동 문제를 발생할 수 있는 파라메타들을 선택하였다. 또한 각 발전기의 발전량 증감에 대한 고유치 변화로부터 미소신호안정도 상정사고를 일으킬 수 있는 발전기들을 선택하였다. 이 논문에서는 모든 결과들을 2000년 KEPCO 실계통의 시간영역해석과 비교 검증하여 제안한 미소신호안정도 상정사고 해석법이 정확함을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.550-553
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• 2001

In this study, unity current gain frequency f$\_$T/ of GaAs MESFET is predicted with different temperatures up to 400 $^{\circ}C$. Temperature dependence parameters of the device including intrinsic carrier concentration n$\_$i/ effective mass, depletion width are considered to be temperature dependent. Small signal parameters such as gate-source, gate dran capacitances C$\_$gs/ C$\_$gd/ are correlated with transconductance g$\_$m/ to predict the unity current gain frequency. The extrinsic capacitance which plays an important roles in high frequency region has been taken into consideration in evaluating total capacitance by using elliptic integral through the substrate. From the results, f$\_$T/ decreases as the temperature increases due to the increase of small signal capacitances and the mobility degradation. Finally the extrinsic elements of capacitances have been proved to be critical in deciding f$\_$T/ which are originated from the design rule of the device.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권3호
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• pp.125-135
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• 2009

An analytical 2-dimensional model to explain the small signal and noise properties of an AlGaN/GaN modulation doped field effect transistor has been developed. The model is based on the solution of two-dimensional Poisson's equation. The developed model explains the influence of Noise in ohmic region (Johnson noise or Thermal noise) as well as in saturated region (spontaneous generation of dipole layers in the saturated region). Small signal parameters are obtained and are used to calculate the different noise parameters. All the results have been compared with the experimental data and show an excellent agreement and the validity of our model.