• 대한금속재료학회지
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• 제46권2호
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• pp.88-96
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• 2008

Thermal evaporated 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films were deposited to examine the energy saving properties of silicides formed by rapid thermal annealing at temperature ranging from 500 to $1,100^{\circ}C$ for 40 seconds. Thermal evaporated 10 nm-Ni/(70 nm-poly)Si films were also deposited as a reference using the same method for depositing the 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films. A four-point probe was used to examine the sheet resistance. Transmission electron microscopy (TEM) and X-ray diffraction XRD were used to determine cross sectional microstructure and phase changes, respectively. UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were used to examine the near-infrared (NIR) and middle-infrared (MIR) absorbance. TEM analysis confirmed that the uniform nickel-cobalt composite silicide layers approximately 21 to 55 nm in thickness had formed on the single and polycrystalline silicon substrates as well as on the 25 to 100 nm thick nickel silicide layers. In particular, nickel-cobalt composite silicides showed a low sheet resistance, even after rapid annealing at $1,100^{\circ}C$. Nickel-cobalt composite silicide and nickel silicide films on the single silicon substrates showed similar absorbance in the near-IR region, while those on the polycrystalline silicon substrates showed excellent absorbance until the 1,750 nm region. Silicides on polycrystalline substrates showed high absorbance in the middle IR region. Nickel-cobalt composite silicides on the poly-Si substrates annealed at $1,000^{\circ}C$ superior IR absorption on both NIR and MIR region. These results suggest that the newly proposed $Ni_{50}Co_{50}$ composite silicides may be suitable for applications of IR absorption coatings.

• Bulletin of the Korean Chemical Society
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• 제30권11호
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• pp.2691-2696
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• 2009

Effects of representative group II and transition metal ions on the stability of the $poly(dA){\cdot}[poly(dT)]_2$ triplex were investigated by the van’t Hoff plot constructed from a thermal melting curve. The transition, $poly(dA){\cdot}[poly(dT)]_2\;{\rightarrow}\;poly(dA){\cdot}poly(dT)\;+\;poly(dT)$, was non-spontaneous with a positive Gibb’s free energy, endothermic (${\Delta}H^{\circ}$ > 0), and had a favorable entropy change (${\Delta}S^{\circ}$ > 0), as seen from the negative slope and positive y-intercept in the van’t Hoff plot. Therefore, the transition is driven by entropy change. The $Mg^{2+}$ ion was the most effective at stabilization of the triplex, with the effect decreasing in the order of $Mg^{2+}\;>\;Ca^{2+}\;>\;Sr^{2+}\;>\;Ba^{2+}$. A similar stabilization effect was found for the duplex to single strand transition: $poly(dA){\cdot}poly(dT)\;+\;poly(dT)\;→\;poly(dA)\;+\;2poly(dT)$, with a larger positive free energy. The transition metal ions, namely $Ni_{2+},\;Cu_{2+},\;and\;Zn_{2+}$, did not exhibit any effect on triplex stabilization, while showing little effect on duplex stabilization. The different effects on triplex stabilization between group II metal ions and the transition metal ions may be attributed to their difference in binding to DNA; transition metals are known to coordinate with DNA components, including phosphate groups, while group II metal ions conceivably bind DNA via electrostatic interactions. The $Cd_{2+}$ ion was an exception, effectively stabilizing the triplex and melting temperature of the third strand dissociation was higher than that observed in the presence of $Mg_{2+}$, even though it is in the same group with $Zn_{2+}$. The detailed behavior of the $Cd_{2+}$ ion is currently under investigation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1019-1022
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• 2004

High performance p-ch poly-Si TFTs with excellent stability were developed. By using a frequency doubled DPSS CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon named as a sequential lateral crystallization (SLC) region. We fabricated p-ch TFTs on SLC region and the typical characteristic values of the TFTs were $u_{fe}$ = 180 $cm^2$/Vs, $V_{th}$ = -3 V, S.S. = 0.5 V/dec, and $I_{off}$ = 1 pA/um@ $V_d$ = -10V. It is found that the TFTs are very stable after bias stresses such as negative and positive gate biases, hot carrier bias and high current bias. These results indicate that the poly-Si in SLC region is suitable for system on glass (SOG) application.

• Bulletin of the Korean Chemical Society
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• 제29권1호
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• pp.104-110
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• 2008

Poly(allylamine) hydrochloride is a weak cationic polyelectrolyte that exhibits different aggregation properties at different solution pH values and aging times. Specifically, after several days aging in a pH 3 buffer, less than 1 mg/mL poly(allylamine) hydrochloride became turbid, and the hydrodynamic radius increased with a single diffusion mode. However, the hydrodynamic radius did not change at high concentrations. The dynamic processes of polymer aggregations at different pH values were verified by a light scattering and zeta-potential apparatus. The major interaction was caused by the capturing of counterions by the polyelectrolyte, which generates electrostatic, hydrophobic and cation-p interactions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.131-134
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• 2000

Electroluminescent[EL] from conjugated polymers has recently received great attention because polymer light-emitting diodes[LEDs] clearly have potential for applications such as large-area displays. The operation of polymer LEDs is based on double injection of electrons and holes from the electrodes, followed by formation of excitons whose radiative decay results in light emission at wavelength characteristic to the material In this paper, we fabricated the single layer EL device using poly(3-octylthiophene)[P3OT] as emitting material. The orange-red light was clearly visible in a dark room Maximum peak wavelength of EL spectrum saw at 640nm in accordance with photon energy 1.9eV. And we know that ionization energy of P3OT is 4.7eV from the cyclic voltammetry.

• Transactions on Electrical and Electronic Materials
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• 제13권6호
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• pp.317-321
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• 2012

Poly[4,4'(3,3')-biphenylenevinylene-alt-2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene], 4,4'(3,3')-PBPMEH-PPV, and poly[4,4'(3,3')-biphenylenevinylene-alt-N-ethylhexyl-3,6-carbazolevinylene], 4,4'(3,3')-PBPCAR-PPV, of varying effective conjugation lengths, were synthesized by the well-known Wittig condensation polymerization between the appropriate biphenyl diphosphonium salts and dialdehyde monomers such as carbazole or dialkoxyphenyl dialdehyde. The conjugation lengths of the polymers were controlled by biphenyl linkages (4,4' or 3,3'). The resulting polymers were highly soluble in common organic solvents and exhibited good thermal stability up to $300^{\circ}C$. The synthesized polymers showed UV-visible absorbance and photoluminescence (PL) in the ranges of 314-400 nm and 430-507 nm, respectively. Carbazole and 3,3'-biphenyl containing 3,3'-PBPCAR-PPV showed a blue PL peak at 430 nm. A single-layer light-emitting diode was fabricated in a configuration of ITO/polymer/Al. Electroluminescence (EL) emission of 3,3'-PBPCAR-PPV was shown at 455 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.263-266
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• 1999

Electrolunlinescent devices based on conjugated polymer emitting materials have been much attracted possible applications for multicolor flat panel display, since the conjugated polymers have a small band gap emitting obtained at a low driving voltage. In this paper, we fabricated the single layer EL device using poly(3-hexylthiophene) as emitting material Electroluminescence(EL) and I-V-L characteristics of indium-tin-oxide[ITO]P3HT/AI device with a various thickness were investigated. It was demonstrate that the I-V characteristics depend, not the voltage but the electric- field strength, The current is dependent on the electric filed and not on the applied voltage, indicating that the carriers are injected by a tunneling process. In the device, the barrier to hole injection is only 0.5eV and the barrier to electron injection is 1.5eV.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.559-561
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• 2003

We report a new excimer laser annealing method which successfully results in a single grain boundary formation in the channel of polycrystalline silicon thin film transistor. The proposed method is based on lateral grain growth and employs aluminum patterns which act as selective beam mask and lateral heat sink. The maximum grain size obtained by the proposed method is about 1.6${\mu}{\textrm}{m}$ in the length. The grainboundaries should be arranged parallel with the direction of current flow for the best device performance, so we propose a new device fabrication method and a new poly-Si TFT structure. Poly-Si TFT fabricated by the proposed method exhibits considerably improved electrical characteristics, such as high field effect mobility exceeding 240 $cm^2$/Vsec.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.134-135
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• 2007

Growth of cubic SiC has been carried out on oxided Si substrate using atmospheric pressure chemical vapor deposition (APCVD). Hexamethyldisilane (HMDS) was used as the single precursor and nonflammable mixture of Ar and $H_2$ was used as carrier gas. Epitaxial growth had performed depositions under the various $H_2$ conditions which were adjusted from 0 to 100 seem. The effects of $H_2$ was characterized by surface roughness, thickness uniformity, films quality and elastic modulus. Thickness uniformity and films quality were performed by SEM. Surface roughness and elastic modulus were investigated by AFM and Nano-indentor, respectively. According to the $H_2$ flow rate, Poly 3C-SiC thin film quality was improved not only physical but also mechanical properties.

• Bulletin of the Korean Chemical Society
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• 제18권11호
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• pp.1195-1199
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• 1997

Anthraquinone-2-sulfonate (AQS) release from poly(N-methylpyrrole anthraquinone-2-sulfonate) (PNMP-AQS) was investigated at open circuit and compared with electrochemically stimulated release during potential cycling. It was found that the fast AQS release from PNMP-AQS single layers is substantially retarded and the amounts of spontaneously and electrochemically releasable AQS can be reduced by constructing bilayers, consisting of PNMP-AQS inner layers and PNMP outer layers. PNMP-Cl outer layers exhibited higher effectiveness for entrapping AQS within inner layers than PNMP/poly(styrene slfonate). The effects of outer layer thicknesses on AQS release were also examined with PNMP-AQS:PMP-Cl. The electroactivity enhancement of PNMP-AQS:PNMP-Cl bilayers due to entrapped AQS was confirmed by chronocoulometry.