• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.348-349
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, Hz, and Ar gas at $1180^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84 V, over 140 V, 61nm, and $2.7\;{\times}\;10^{19}\;cm^3$, respectively. The p-n junction diodes fabricated on the poly 3C-SiC/Si(p-type) were obtained like characteristics of single 3C-SiC p-n junction diodes. Therefore, poly 3C-SiC thin film diodes will be suitable microsensors in conjunction with Si fabrication technology.

• Development and Reproduction
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• v.2 no.2
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• pp.149-155
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• 1998

The polysialic acid (polySia) glycotope covalently modifies cell surface glycoconjugates on cells as evolutionarily diverse as microbes and human. The recent chemical identification of polysialylated glycoproteins in the jelly coat and on the cell surface of the sea urchin egg raises important questions about their biosynthesis and possible function. Using CMP-[$^{14}$ C]Neu5Ac as substrate and cell free preparations from eggs and embryos of the sea urchin Stronglylcentrotus nudus, we have identified a membrane associated CMP-Neu5Ac:poly-$\alpha$2, 8 sialosyl sialyltransferase (polyST) that transfers Neu5Ac to an endogenous acceptor. Optimal conditions for the polyST activity were found to be 2$0^{\circ}C$ in 20 mM MOPS buffer (pH 7.0). The polyST activity was increased 2.7 times by the addition of 10 mM $Mg^2$$^{+}$. The membrane-associated polyST also catalyzed the polysialylation of mammalian ganglioside GD3. Given that no structurally similar natural polysialylated gangliosides have been described, nor were observed in the present study, we conclude that a single polyST activity catalyzes sialylation of the endogenous acceptor and the gangliosides. Using an excess of GD3 as an exogenous acceptor, it was established that the expression of the polyST in S. nudus embryos increased rapidly at the mesenchyme blastula stage and reached at maximum at the gastrula stage. The finding that this polyST in the sea urchin embryo is developmentally regulated raises the possibility that it may play a role in the changing cell and tissue interactions that occur during gastrulation and the early stages of spicule formation.n.

• Applied Chemistry for Engineering
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• v.9 no.5
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• pp.710-714
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• 1998

Organic electroluminescence devices (ELD) with hetero-junction structure were fabricated utilizing poly(p-phenylne vinylene) (PPV) as emitting layer and electron transport layer (ETL). 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) was used as an electron transport agent. Copolymers with stilbene type comonomers, such as poly(styrene-co-PVTS), poly(styrene-co-MeO-PVTS) and poly(styrene-co-MeO-ST) were synthesized to be used as a matrix polymer to disperse electron transport agent (PBD). Among the hetero-junction EL devices fabricated with the above materials, the device with poly(styrene-co-PVTS) as matrix polymer for ETL gave the highest luminance ($120.7cd/m^2$, 13 V). EL devices made with poly(styrene-co-MeO-PVTS) or poly(styrene-co-MeO-ST) matrix exhibited lower luminance than the one with polystyrene matrix and the single layer EL (ITO/PPV/Mg) device.

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.111-112
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• 1995

• Proceedings of the Korean Fiber Society Conference
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• 1996.04a
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• pp.231-233
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• 1996

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.50-52
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• 2006

본 논문은 고성능 다결정 실리콘(Poly-Si) 박막 트랜지스터 (Thin Film Transistor)에서 단일 수직 그레인 경계(Single Perpendlcular Grain Boundary)가 고온 캐리어 스트레스(Hot Carrier Stress) 및 정전류 안정성 평가에서 어떠한 효과를 보이는가에 대해서 살펴보았다. 고온 캐리어 스트레스 하에서($V_G=V_{TH}+1V,\;V_D$ =12V),그레이 경계가 없는 다결정 실리콘 TFT와 비교했을 때 그레인 경계를 가지고 있는 다결정 실리를 TFT는 전기 전도(Electric Conduction)에 작용하는 자유 캐리어(Free Carrier)의 개수가 적기 때문에 상대적으로 더욱 우수한 전기적 특성을 나타낸다. 먼저 1000초 동안 고온 캐리어 스트레스를 가해준 결과 단일 그레인 경계를 가진 다결정 실리콘에서의 트랜스 컨덕턴스(Transconductance)의 이동 정도는 5% 미만으로 확인되었다. 반면에 같은 스트레스 조건 하에서 그레인 경계가 존재하지 않는 다결정 실리콘의 경우에는 그 이동 정도가 약 25%에 달하는 것으로 측정되었다. 다음으로 정전류 스트레스(Constant Current Stress) 인가시, 수직형 그레인 경계가 채널 영역 내에 존재하지 않는 다결정 실리콘 TFT는 드레인 접합 부분의 전계 세기를 비교했을 때, 그레인 경계를 가지고 있는 다결정 실리콘 TFT보다 상대적으로 낮은 원 인 때문에 적게 열화되는(Degraded) 특성을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.332-335
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• 2000

We fabricated organic electroluminescent (EL) devices with single layer of poly(3-dodeoylthiophene) (P3DoDT) hlended with different amounts of poly(N-vinylcarbazole) (PVK) as a emitting layer. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-brightness characteristics of devices applied LiF layer, current and brightness increased with increasing applied voltage. The brightness of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V. Electrical impedance properties of ITO/emitting layer/LiF/Al devices were investigated. In the Cole-Cole plots of impedance data, one semicircle was observed. Therefore, the equivalent circuit for the devices can be designed as a single parallel resistor and capacitor network with series resistor.

• Environmental Engineering Research
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• v.24 no.3
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• pp.376-381
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• 2019

In this study, a poly(vinyl) alcohol/sodium alginate (PVA/SA) mixture was used to fabricate core-shell structured gel beads for autotrophic single-stage nitrogen removal (ASNR) using aerobic and anaerobic ammonia-oxidizing bacteria (AAOB and AnAOB, respectively). For stable ASNR process, the mechanical strength and oxygen penetration depth of the shell layer entrapping the AAOB are critical properties. The shell layer was constructed by an interfacial gelling reaction yielding thickness in the range of 2.01-3.63 mm, and a high PVA concentration of 12.5% resulted in the best mechanical strength of the shell layer. It was found that oxygen penetrated the shell layer at different depths depending on the PVA concentration, oxygen concentration in the bulk phase, and free ammonia concentration. The oxygen penetration depth was around $1,000{\mu}m$ when 8.0 mg/L dissolved oxygen was supplied from the bulk phase. This study reveals that the shell layer effectively protects the AnAOB from oxygen inhibition under the aerobic conditions because of the respiratory activity of the AAOB.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.55-61
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• 1998

Organic light emitting devices from a single layer thin film with a hole transport polymer, poly(N-vinylcarbazole) (PVK) doped with 2-(4-bi phenyl)-5-(4-t-butyl-phenyl) -1,3,4-oxadiazole (Bu-PBD) as electron transporting molecules and Coumurine 6(C6), 1,1,4,4-tetraphenyl-1,3-butadiene (TPB), Rhodamine B as a emitter dye were fabricated. The sing1e layer structure and the use of soluble materials simplify the fabrication of devices by spin coating technique. The active layer consists of one polymer layer that is simply sandwiched between two electrodes, indium-tin oxide (ITO), and aluminum. In this structure, electron and hole inject from the electrodes to the PVK : Bu-PBD active layer. Respectively, Blue, green and orange colored emission spectrum by the use of TPB, C6, Rhodamine B dye emitted at 481nm, 500nm and 585nm were achieved during applied voltages. PVK materials can be useful as the host polymer to be molecularly doped with other organic dyes of the different luminescence colors. And EL color can be tuned to the full visible wavelength.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.1
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• pp.49-58
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• 1999

This paper describes an integrated low pass filter fabricated by using $0.8{\mu}m$ single poly CMOS ASIC technology. The filter has been designed for a 5th-order elliptic switched capacitor filter with cutoff frequency of 5khz, 0.1dB passband ripple. The filter consists of MOS swiches poly capacitors and five CMOS op-amps. For the realization of the SC filter, continuous time transfer function H(s) is obtained from LC passive type, and transfered as discrete time transfer H(z) through bilinear-z transform. Another filter has been designed by capacitor scaling for reduced chip area, considering dynamic range of the op-amp. The test results of two fabricated filters are cutoff frequency of 4.96~4.98khz, 35~38dB gain attenuation and 0.72~0.81dB passband ripple with the ${\pm}2.5V$power supply clock of 50KHz.