• 한국산업정보학회:학술대회논문집
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• 한국산업정보학회 2002년도 추계공동학술대회
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• pp.363-370
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• 2002

RF에서 동작하는 초미세 공정 MOS 트랜지스터의 기판 효과에 따른 기판 회로망과 물리적 의미를 가지는 파라미터 추출법이 고려되었다. 제안된 기판 회로망에는 단일의 저항과 링-형태의 기판 콘택에 의해 생성된 인덕터가 포함되었다. 모델 파라미터는 최적화 과정 없이 단절된 게이트와 공통-벌크 구성을 갖는 MOS 트랜지스터에서 측정된 S-파라미터로부터 추출된다. 제안된 기술은 다양한 크기의 MOS 트랜지스터에 적용되어졌다. 추출된 기판 회로망을 이용한 가상실험 결과와 측정치는 약 300Hz까지 일치함을 검증하였다.

• 한국결정성장학회지
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• 제9권1호
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• pp.14-19
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• 1999

Hexamethyldisilane$(Si_{2}(CH_{3})_{6})$의 single precursor를 사용하여 화학기상증착법으로 $1100^{\circ}C$에서 Si 기판의에 $\beta$-SiC 막을 증착시켰다. 증착과정 중 hexamethyldisilane/$H_{2}$ gas system에 HCI gas를 도입하여 mask 재료에 의해 부분적으로 덮여져 있는 Si 기판에서 SiC 증착의 선택성을 조사하였다. Si 기판과 mask 재료에서 SiC 증착의 선택성을 증진시키기 위해 출발물질과 HCI gas의 공급 방법을 변화시켰다. 결국, HCI gas를 도입함으로서 SiC 증착의 선택성은 증진되었고 펄스 형태로의 gas 공급 방법은 선택성을 향상시키는데 효율적이었다.

• Progress in Superconductivity
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• 제12권1호
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• pp.68-73
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• 2010

Y123 films have been deposited on $LaAlO_3$ (100) single-crystal and IBAD substrates by spray pyrolysis method using nitrate precursors. Ultrasonic atomization was adopted to decrease the droplet size, spraying angle and its moving velocity toward substrate for introducing the preheating tube furnace in appropriate location. A small preheating tube furnace was installed between spraying nozzle and substrate for fast drying and enhanced decomposition of precursors. C-axis oriented films were obtained on both LAO and IBAD substrates at deposition temperature of around $710{\sim}750^{\circ}C$ and working pressures of 10~15 torr. Thick c-axis epitaxial film with the thickness of $0.3{\sim}0.6\;{\mu}m$ was obtained on LAO single-crystal by 10 min deposition. But the XRD results of the film deposited on IBAD template at same deposition condition showed that the buffer layers of the IBAD metal substrate was affected by long residence of metal substrate at high temperature for YBCO deposition.

• 대한기계학회논문집A
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• 제35권11호
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• pp.1355-1360
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• 2011

흡착형 세포의 이동에 있어 세포와 바닥면간의 상호작용은 매우 중요한 역할을 한다. 본 논문은 주화성에 의한 흡착형 세포의 이동에 있어 세포와 바닥면과의 상호작용에 따른 영향을 보이기 위해 확산계면모델을 바탕으로 한 3 차원의 입체 모델을 제안한다. 세포와 바닥면간의 영향을 표현하기 위해 세포 주위 물질과의 관계를 고려한 경계에너지를 고려하였다. 본 연구에서 적용한 확산계면모델은 경계에너지, 주화성, 확산성을 모두 고려한 다중 메커니즘 모델로서 흡착형 세포이동의 역학적 특성을 정확히 예측하는데 있어 높은 신뢰성을 보일 것이라 기대된다.

• Membrane and Water Treatment
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• 제6권3호
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• pp.251-262
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• 2015

In this work the preparation and characterization of a membrane containing a uniform mesoporous Titanium oxide top layer on a porous stainless steel substrate has been studied. The 316 L stainless steel substrate was prepared by powder metallurgy technique and modified by soaking-rolling and fast drying method. The mesoporous titania membrane was fabricated via the sol-gel method. Morphological studies were performed on both supported and unsupported membranes using scanning electron microscope (SEM) and field emission scanning microscope (FESEM). The membranes were also characterized using X-ray diffraction (XRD) and $N_2$-adsorption / desorption measurement (BET analyses). It was revealed that a defect-free anatase membrane with a thickness of $1.6{\mu}m$ and 4.3 nm average pore size can be produced. In order to evaluate the performance of the supported membrane, single-gas permeation experiments were carried out at room temperature with nitrogen gas. The permeability coefficient of the fabricated membrane was $4{\times}10^{-8}\;lit\;s^{-1}\;Pa^{-1}\;cm^{-1}$.

• 반도체디스플레이기술학회지
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• 제8권1호
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• pp.1-5
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• 2009

Typically, single-wafer wet etching is done by dispensing chemical onto the front and back side of spin wafer. The wafer is fixed by a number of chuck pins, which obstruct the chemical flow and would result in the incomplete removal of the remaining film, which can become a source of contamination in the next process. In this paper, we introduce a novel design of wafer chuck, in which chuck pins are groupped into two and each group of pins fixes the substrate alternatively. Two groups of chuck pins fix the high-speed spin substrate with non contact method using a magnetic material. The actual process has been executed to observe the effectiveness of this new wafer chuck. It was found that the new wafer chuck performed better than the conventional wafer chuck for removing the remaining film from the bevel and edge side of substrate.

• 센서학회지
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• 제22권3호
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• International Journal of Precision Engineering and Manufacturing
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• 제9권3호
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• pp.79-81
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• 2008

A single-wall carbon nanotube (SWNT) transparent conductive film (TCF) was fabricated using a simple inkjet printing method. The TCF could be selectively patterned by controlling the dot size to diameters as small as $34{\mu}m$. In this repeatable and scalable process, we achieved 71% film transmittance and a resistance of 900 ohm/sq sheet with an excellent uniformity, about ${\pm}5%$ deviation overall. Inkjet printing of SWNT is substrate friendly and the TCF is printed on a flexible substrate. This method of fabrication using direct printing permits mass production of TCF in a large area process, reducing processing steps and yielding low-cost TCF fabrications on a designated area using simple printing.

• 대한전자공학회논문지
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• 제25권3호
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• pp.343-351
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• 1988

Planar optical waveguides are fabricated on a Y-cut LiNbO3 single crystal substrate by Ti indiffusion method. From data measured by the bright M-line spectroscopy, refractive index profiles are reconstructed by WKB approximation method. Then, single strip, X-crossing strip, and Y-brinch strip optical waveguides are fabricated on X-cut LiNbO3 single crystal substrate, with waveguide patterns made by the laser beam direct writing method. And their near-field intensity profiles are observed after coupling the light to the waveguide edges.

• Journal of electromagnetic engineering and science
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• 제17권4호
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• pp.233-237
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• 2017

In this paper, a dual-band high frequency (HF) and ultra-high frequency (UHF) radio-frequency identification (RFID) tag antenna is presented that operates in the 13.56 MHz band as well as in the 920 MHz band. A spiral coil along the edges of the antenna substrate is designed to handle the HF band, and a novel meander open complementary split ring resonator (MOCSRR) dipole antenna is utilized to generate the UHF band. The dual-band antenna is supported by a single-feeding port for mono-chip RFID applications. The antenna is fabricated using an FR4 substrate to verify theoretical and simulation designs, and it has compact dimensions of $80mm{\times}40mm{\times}0.8mm$. The proposed antenna also has an omnidirectional characteristic with a gain of approximately 1 dBi.