• Journal of the Korean Ceramic Society
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• v.32 no.2
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• pp.234-238
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• 1995

MgFe2O4 formation, grain growth in Fe2O3, Fe solid-solution limit in MgO for MgO-Fe2O3 mixture were studied by means of investigating the distribution of phases and compositions in reaction area between MgO and Fe2O3. The reaction area at equlibrium was composed with MgO-FexO matrix and MgFe2O4 precipitation, MgFe2O4 was formed by precipitating from MgO-FexO matrix dependent on oxygen partial pressure. Fe contents was exponentially decreased with diffusion distance in MgO single crystal, and thus Fe solid-solution limitation in MgO was about 4mol%. The grain growth rate in Fe2O3 base was increased with Mg contents diffused from MgO single crystal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.905-908
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• 2000

The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.329-329
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• 2016

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.413-421
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• 2017

In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped $CeO_2$ (GDC); erbia stabilized $Bi_2O_3$ (ESB); Zr doped erbia stabilized $Bi_2O_3$ (ZESB); Ca doped erbia stabilized $Bi_2O_3$ (CESB) in the temperature range of 250 to $600^{\circ}C$ using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these materials exhibit a single arc at low temperature. This means that there is no space charge effect on ${\delta}-Bi_2O_3$. In addition, impedance data were analyzed by using the brick layer model. We indirectly demonstrate that grain boundary ionic conductivity is similar to or even higher than bulk ionic conductivity on cubic bismuth oxide.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.6
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• pp.1-7
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• 1993

After the 1%S-Al metal is deposited, a thin oxide is formed thereon. Then, a single charged Argon(Ar$^{+}$) is ion implanted into the oxide layer, thereby causing the metal grain in the upper surface of the metal layer to become amorphous. Consequently, the grain size will be reduced and the rough surface of the metal layer flattened. However, the remainder of the metal layer beneath the upper surface thereof will still exhibit large grain size and low resistance, because the Argon ion is only implanted to characterized by a dual-sized grain structure which served to reduce interlayer stress, thereby decreasing the rate of stress migration, and to lower the resistivity of the metal line, thereby enhancing the electromigration characteristic thereof. Experiments have shown that the metal line exhibits a metal migration rate which is approximately 700% less than the control group and a standard deviation which is approximately 200% less than these group.p.

• Journal of the Korean Magnetics Society
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• v.2 no.3
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• pp.228-232
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• 1992

Magnetic properties of grain aligned high $T_c\;Y_1Ba_2Cu_3O_{7-y}$ superconductor are inverstigated. Grain-aligned superconductors have magnetic anisotropy in the Cu-O layer like single crystals. The lower critical field $H_{c1},$ measured at the temperature range of 2 K up to 77 K, is found to be decreasing linearly as temperature goes up. Moreover, it decreaes more rapidly when the Cu-O layer is perpendicular to the external magnetic field. The temperature dependence of the magnetic susceptibility shows that the value of magnetic susceptibility, $4{\pi}\;X,$ is close to -1 at low temperature. The intra grain critical current density $J_c,$ obtained from the Bean's critical state model, is found to be comparable to that of single crystal superconductors.

• Journal of the Korean Society for Heat Treatment
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• v.26 no.3
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• pp.105-112
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• 2013

The microstructural changes of Fe-20Mn-12Cr-1Cu alloy have been studied during high temperature gas nitriding (HTGN) at the range of $1000^{\circ}C{\sim}1150^{\circ}C$ in an atmosphere of nitrogen gas. The mixed microstructure of austenite and ${\varepsilon}$-martensite of as-received alloy was changed to austenite single phase after HTGN treatment at the nitrogen-permeated surface layer, however the interior region that was not affected nitrogen permeation remained the structure of austenite and ${\varepsilon}$-martensite. With raising the HTGN treatment temperature, the concentration and permeation depth of nitrogen, which is known as the austenite stabilizing element, were increased. Accordingly, the depth of austenite single phase region was increased. The outmost surface of HTGN treated alloy at $1000^{\circ}C$ appeared Cr nitride. And this was in good agreement with the thermodynamically calculated phase diagram. The grain growth was delayed after HTGN treatment temperature ranges of $1000^{\circ}C{\sim}1100^{\circ}C$ due to the grain boundary precipitates. For the HTGN treatment temperature of $1150^{\circ}C$, the fine grain region was shown at the near surface due to the grain boundary precipitates, however, owing to the depletion of grain boundary precipitates, coarse grain was appeared at the depth far from the surface. This depletion may come from the strong affinity between nitrogen and substitutional element of Al and Ti leading the diffusion of these elements from interior to surface. Because of the nitrogen dissolution at the nitrogen-permeated surface layer by HTGN treatment, the surface hardness was increased above 150 Hv compared to the interior region that was consisted with the mixed microstructure of austenite and ${\varepsilon}$-martensite.

• Journal of the Korean Chemical Society
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• v.21 no.5
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• pp.339-352
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• 1977

The authors' theory developed in the preceding Paper 1 was applied to plastic deformation of ceramics, metals, alloys and single crystals. For polycrystalline substances, the flow mechanisms due to dislocation movement and grain boundary movement appear together or separately according to the experimental conditions whereas for single crystals, only the mechanism of dislocation movement appears. The parameters appearing in the flow equations $({\alpha}_{d1},\;1/{\beta}_{d1})and\;({\alpha}_{gj}/X_{gj},\;1/{\beta}_{gj})$ (j = 1 or 2), and the activation enthalpies ${\Delta}H_{k1}^{\neq}$ (k = d or g) were determined and tabulated. Here, the subscript d1 indicates the first kind of dislocation flow units and gj expresses the jth kind of grain boundary flow units. The predictions of the theory were compared with experiment with good agreement. Concerning the activation enthalpies, it was found that ${\Delta}H_{d1}^{\neq}$ 〉{\Delta}H_{g1}^{\neq}$ and that the former agrees with the activation enthalpy for bulk self-diffusion whereas the latter agrees with the activation enthalpy for grain boundary self-diffusion. These facts support the adequacy of the authors' theory which is considered as a generalized theory of plastic deformation.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.74-77
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• 2000

Ta-doped PZT thin films prepared by reactive co-sputtering method could be transformed into single grained perovskite structure utilizing physical etching of Pt bottom electrode. It is found that PZT perovskite phase on damaged (111) Pt electrode by IMD was more easily crystallized than random oriented Pt electrode and less crystallized than (111) Pt electrode. This shows that amorphized Pt electrode surface by IMD process has an effect on crystallization of PZT perovskite phase. 40$\mu\textrm{m}\times40\mu\textrm{m}$ square shape single grain PZT array could be obtained utilizing the difference of incubation time for nucleation of rosettes between ion damaged Pt and (111) oriented Pt electrode. Single grained PZT thin films show low leakage current density of $1\times10^{-7}$ A/$\textrm{cm}^2$ and high break down field of 440kV/cm. The loss of remanent polarization after $10^{11}$ cycles was less than 15% of initial value.

• Korean Journal of Agricultural Science
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• v.44 no.2
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• pp.196-210
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• 2017

The synergistic effect on phosphate solubilization of single- and co-inoculation of two phosphate solubilizing bacteria, Burkholderia cepacia (C1) and Alcaligenes aquatilis (H6), was assessed in liquid medium and maize plants. Co-inoculation of two strains was found to release the highest content of soluble phosphorus (309.66 ?g/mL) into the medium, followed by single inoculation of B. cepacia (305.49 ?g/mL) and A. aquatilis strain (282.38 ?g/mL). Based on a plant growth promotion bioassay, co-inoculated maize seedlings showed significant increases in shoot height (75%), shoot fresh weight (93.10%), shoot dry weight (84.99%), root maximum length (55.95%), root fresh weight (66.66%), root dry weight (275%), and maximum leaf length (81.53%), compared to the uninoculated control. In a field experiment, co-inoculated maize seedlings showed significant increases in cob length (136.92%), number of grain/cob (46.68%), and grain weight (67.46%) over control. In addition, single inoculation of maize seedlings also showed improved result over control. However, there was no significant difference between single inoculation of either bacterial strains and co-inoculation of these two bacterial strains in terms of phosphate solubilization index, phosphorous release, pH of the media, and plant growth parameters. Thus, single inoculation and co-inoculation of these bacteria could be used as biofertilizer for improving maize growth and yield.