• 대한기계학회논문집A
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• 제40권1호
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• pp.23-31
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• 2016

본 연구에서는 연성 금속재료의 판상형 인장 시편에 대한 동적 물성을 측정하기 위한 인장형 홉킨슨 바(TSHB, Tensile split Hopkinson bar)의 수정 방법에 대해 논의하고, 이를 이용하여 고순도 알루미늄 단결정 및 멀티결정재의 동적 물성을 측정하였다. 시편의 초기 미세조직 및 결정학적 방위는 전자후방 산란회절(EBSD, Electron backscattered diffraction) 분석을 통하여 측정하였으며, 동적 변형 후 파단 형상을 광학 현미경을 통하여 확인하였다. 고속인장 변형 중 시편 내부에 발생하는 변형 분포는 디지털 이미지 상관(DIC, Digital image correlation) 기법을 이용하여 측정하였다. 이를 통해 동적 변형 중 나타나는 알루미늄의 거시적인 소성 변형과 결정학적 방위 및 미세 조직과의 상관관계에 대해 논의하였다.

• 한국분말재료학회지
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• 제25권3호
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• pp.208-212
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• 2018

In this paper, a new $Co_{10}Fe_{10}Mn_{35}Ni_{35}Zn_{10}$ high entropy alloy (HEA) is identified as a strong candidate for the single face-centered cubic (FCC) structure screened using the upgraded TCFE2000 thermodynamic CALPHAD database. The $Co_{10}Fe_{10}Mn_{35}Ni_{35}Zn_{10}$ HEA is fabricated using the mechanical (MA) procedure and pressure-less sintering method. The $Co_{10}Fe_{10}Mn_{35}Ni_{35}Zn_{10}$ HEA, which consists of elements with a large difference in melting point and atomic size, is successfully fabricated using powder metallurgy techniques. The MA behavior, microstructure, and mechanical properties of the $Co_{10}Fe_{10}Mn_{35}Ni_{35}Zn_{10}$ HEA are systematically studied to understand the MA behavior and develop advanced techniques for fabricating HEA products. After MA, a single FCC phase is found. After sintering at $900^{\circ}C$, the microstructure has an FCC single phase with an average grain size of $18{\mu}m$. Finally, the $Co_{10}Fe_{10}Mn_{35}Ni_{35}Zn_{10}$ HEA has a compressive yield strength of 302 MPa.

• 대한치과기공학회지
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• 제35권1호
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• pp.57-64
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• 2013

Purpose: Waste parts of zirconia blocks and powders were remained after CAD/CAM process. In order to make these residual zirconia fit for practical use, zirconia single cores were produced by drain casting process. Methods: Remained zirconia blocks were reduced to powders with zirconia mortar, and screened with 180 mesh sieve. Zirconia slip was prepared from waste parts of zirconia by ball milling. Plaster molds for forming cores by slip casting were also prepared. Formed cores were removed from mold after partial drying. Dried cores were biscuit fired at $1,100^{\circ}C$ for 1hour. Biscuit fired cores were treated with tools to control the fitness and thickness. Finished cores were $2^{nd}$ fired at $1,500^{\circ}C$ for 1hour. Microstructure of cross section of core was observed by SEM. Results: When mill pot was filled with 100g of zirconia and alumina mixed powder, 300g of zirconia ball, and 180g of distilled water, the optimum slip for drain casting was obtained. Gypsum plaster for ceramic forming was more suitable then yellow stone plaster for casting process. SEM photograph showed the microstructure of fully dense with uniform grain size of zirconia and well dispersed alumina grains into the zirconia matrix. Conclusion: Zirconia single cores were produced by drain casting process. Drain casting is useful process to make these residual zirconia fit for practical use. Further study will be focused on the preparation of the bridge type cores by casting.

• 한국재료학회지
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• 제8권7호
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• pp.579-583
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• 1998

P가 고농도로 도핑된 다결정 Si 기판 위에 Co/Ti 이중층막을 스퍼터 증착하고 급속열처리함으로써 얻어지는 실리사이드 층구조, 실리사이드막의 응집, 그리고 도펀트의 재분포 등을 단결정 Si 기판 위에서의 그것들과 비교하여 조사하였다. 다결정 Si 기판위에 형성한 Co/Si 이중층을 열처리할 때 단결정 기판에서의 경우보다 $CoSi_2$로의 상천이는 약간 더 낮은 온도에서 시작되며, 막의 응집은 더 심하게 일어난다. 또한, 다결정 Si 기판내의 도펀트보다 웨이퍼 표면을 통하여 바깥으로 outdiffusion 함으로써 소실되는 양이 훨씬 더 많다. 이러한 차이는 다결정 Si 내에서의 결정립계 확산과 고농도의 도펀트에 기인한다. Co/Ti/doped-polycrystalline si의 실리사이드화 열처리후의 층구조는 polycrystalline CoSi2/polycrystalline Si 으로서 Co/Ti(100)Si을 열처리한 경우의 층구조인 Co-Ti-Si/epi-CoSi2/(100)Si 과는 달리 Co-Ti-Si층이 사라진다.

• Progress in Superconductivity
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• 제7권1호
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• pp.6-10
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• 2005

We have studied feasibility of single-layer second-order $high-T_c$ SQUID gradiometers in magnetocardiography. We have measured human cardiomagnetic signals using a short-baseline (5.8 mm) single-layer second-order YBCO gradiometer in partially shielded environments. The gradiometer has an overall size of $17.6\;mm{\times}6\;mm$ and contains three parallel-connected pickup coils which are directly coupled to a step-edge junction SQUID. The gradiometer showed an unshielded gradient noise of $0.84\;pT/cm^2/Hz^{1/2}$ at 1 Hz, which corresponds to an equivalent field noise of $280\;fT/Hz^{1/2}$. The balancing factor was $10^3$. Based on the same design rules as the short-baseline devices, we have studied fabrication of 30 mm-long baseline gradiometers. The devices had an overall size of $70.2\;mm{\times}10.6\;mm$ with each pickup coil of $10\;mm{\times}10\;mm$ in outer size. As Josephson elements we made two types of submicron bridges, which are variable thickness bridge (VTB) and constant thickness bridge (CTB), from $3\;{\mu}m-wide$ and 300 nm-thick YBCO lines with a thin layer of Au on top by using a focused ion beam (FIB) patterning method. VTB was 300 nm wide, 200 nm thick, 30 nm long with Au removed and CTB 100 nm wide and 30 nm long. In temperature-dependent critical currents, $I_c(T)$, VTB showed an nonmetallic barrier-type behavior and CTB an SNS behavior. We believe that those characteristics are ascribed to naturally formed grain boundaries crossing the bridges.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• Transactions on Electrical and Electronic Materials
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• 제4권1호
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• pp.7-10
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• 2003

Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{\circ}C$. annealing temperature of 250$^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${\AA}$ and 11.12${\AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${\times}$10$^4$cm$\^$-1/ and 1.51 eV, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.2-2
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• 2011

Single-walled carbon nanotubes (SWNTs) have been considered as a promising candidate for nextgeneration electronics due to its extraordinary electrical properties associated with one-dimensional structure. Since diversity in electronic structure depends on geometrical features, the major concern has been focused on obtaining the diameter, chirality, and density controlled SWNTs. Despite huge efforts, the controlled synthesis of SWNTs has not been achieved. There have been various approaches to synthesize controlled SWNTs by preparation of homogeneously sized catalyst because the SWNTs diameter highly depends on catalyst nanoparticles size. In this study, geometrically controlled SWNTs were synthesized using designed catalytic layers: (a) morphologically modified Al2O3 supporting layer (Fe/Al2O3/Si), (b) Mo capping layer (Mo/Fe/Al/Si), and (c) heat-driven diffusion and subsequent evaporation process of Fe catalytic nanoparticles (Al2O3/Fe/Al2O3/Si). These results clearly revealed that (a) the grain diameter and RMS roughness of Al2O3 supporting layer play a key role as a diffusion barrier for obtaining Fe nanoparticles with a uniform and small size, (b) a density and diameter of SWNTs can be simultaneously controlled by adjusting a thickness of Mo capping layer on Fe catalytic layer, and (c) SWNTs diameter was successfully controlled within a few A scale even with its fine distribution. This precise control results in bandgap manipulation of the semiconducting SWNTs, determined by direct comparison of Raman spectra and theory of extended tight binding Kataura plot. We suggest that these results provide a simple and possible way for the direct growth of diameter, density, and bandgap controlled SWNTs by precise controlling the formation of catalytic films, which will be in demand for future electronic applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• Journal of Biosystems Engineering
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• 제10권2호
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• pp.55-62
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• 1985

박(朴)(1982, 1983, 1984 및 1985)이 개발(開發)한 배합사료공장(配合飼料工場)의 투자비용(投資費用) 및 운전비용(運轉費用)의 수학적모형(數學的模型)을 이용(利用)하여, 배합사료공장(配合飼料工場)의 적정(適正) 시스템의 설계(設計)를 예(例)를 들어 소개하였다. 적정(適正)시스템의 설계(設計)를 위(爲)하여 비선형(非線型) 프로그램의 "Single Objective Programming Problem(단일목적함수(單一目的函數))"와 "'Multiple Objective Decision Making Method(다목적함수(多目的函數))"의 2가지 방법(方法)을 적용(適用)하였다. Single Objective Programming Problem에서는 "Generalized Reduced Gradient(GRG) Method"를 이용(利用)하였고, Multiple Objective Decision Making Method(MODM)에서는 "Interactive Nonlinear Goal Program(INGP)"를 이용(利用)하였으며 그 결과(結果)는 다음의 몇가지로 요약(要約)할 수 있다. 1. 박(朴)이 개발(閒發)한 수학적(數學的) 모형(模型)들은 2 가지 방법(方法) 모두 사료공장(飼料工場)의 최적화(最適化) 설계(設計)에 효과적으로 이용(利用)할 수가 있었다. 2. MODM방법(方法)에 의(依)하여 얻어진 최적(最適)시스템은 Single Objective Program Problem에서 구(求)한 결과(結果)보다 균형(均衡)이 있는 시스템이었으며 장래(將來)의 사료원료(飼料原料), 사료구매시장(飼料購買市場), 기타 다른 조건(條件)들의 변화)에 대(對)해서 보다 탄력(彈力)이 있는 시스템으로 나타났다. 3. 엄밀한 의미(意味)에서 절대적(絶對的)인 최적사료공장(最適飼料工場)이란 있을 수 없으며, 주위의 조건(條件), 원료가격(原料價格), 사료가격(飼料價格), 공장주(工場主)의 취향 및 설계조건등(設計條件等)에 따라 최적(最適) 시스템은 각각(各各) 다르게 나타난다.