• 한국재료학회지
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• 제16권3호
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• pp.168-172
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• 2006

Single pulse of 2.0 to 3.5 kJ from $150{\mu}F$ capacitor was applied to the cp Ti rod for its surface modification and heat treatment. Under the conditions of using 2.0 and 2.5 kJ of input energy, no phase transformation has been occurred. However, the hardness and tensile strength decreased and the elongation increased after a discharge due to a slight grain growth. By using more than 3.0 kJ of input energy, the electro discharge made a phase transformation and the hardness at the edge of the cross section increased significantly. The Ti rod before a discharge was lightly oxidized and was primarily in the form of $TiO_2$. However, the surface of the Ti rod has been instantaneously modified by a discharge into the main form of TiN from $TiO_2$. Therefore, the electro discharge can modify its surface chemistry in times as short as $200{\mu}sec$ by manipulating the input energy, capacitance, and discharging environment.

• 한국재료학회지
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• 제16권3호
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• pp.178-182
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• 2006

A single electro-discharge-sintering (EDS) pulse (1.0 kJ/0.7 g), from a $300{\mu}F$ capacitor, was applied to atomized spherical Ti-6Al-4V powder in a low vacuum to produce porous-surfaced implant compacts. A solid core surrounded by a porous layer was formed by a discharge in the middle of the compact. XPS (X-ray photoelectron spectroscopy) was used to study the surface characteristics of the implant material. C, O, and Ti were the main constituents, with smaller amounts of Al, V, and N. The implant surface was lightly oxidized and was primarily in the form of $TiO_2$ with a small amount of metallic Ti. A lightly etched EDS implant sample showed the surface form of metallic Ti, indicating that EDS breaks down the oxide film of the as-received Ti-6Al-4V powder during the discharge process. The EDS Ti-6Al-4V implant surface also contained small amounts of aluminum oxide in addition to $TiO_2$. However, V detected in the EDS Ti-6Al-4V implant surface, did not contribute to the formation of the oxide film..

• Journal of Electrical Engineering and Technology
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• 제10권5호
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• pp.2018-2030
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• 2015

A two stage ac drive configuration consisting of a single-phase line commutated rectifier and a three-phase voltage source inverter (VSI) is very common in low and medium power applications. The deterministic pulse width modulation (PWM) methods like sinusoidal PWM (SPWM) could not be considered as an ideal choice for modern drives since they result mechanical vibration and acoustic noise, and limit the application scope. This is due to the incapability of the deterministic PWM strategies in sprawling the harmonic power. The random PWM (RPWM) approaches could solve this issue by creating continuous harmonic profile instead of discrete clusters of dominant harmonics. Insufficient filtering at dc link results in the amplitude distortion of the input dc voltage to the VSI and has the most significant impact on the spectral errors (difference between theoretical and practical spectra). It is obvious that the sprawling effect of RPWM undoubtedly influenced by input fluctuation and the discrete harmonic clusters may reappear. The influence of dc link fluctuation on harmonics and their spreading effect in the VSI remains invalidated. A case study is done with four different filter capacitor values in this paper and results are compared with the constant dc input operation. This paper also proposes an ingenious RPWM, a ripple dosed sinusoidal reference-random carrier PWM (RDSRRCPWM), which has the innate capacity of suppressing the effect of input fluctuation in the output than the other modern PWM methods. MATLAB based simulation study reveals the fundamental component, total harmonic distortion (THD) and harmonic spread factor (HSF) for various modulation indices. The non-ideal dc link is managed well with the developed RDSRRCPWM applied to the VSI and tested in a proto type VSI using the field programmable gate array (FPGA).

• 조명전기설비학회논문지
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• 제14권3호
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• pp.49-58
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• 2000

본 논문에서는 FACTS(Flexible AC Transnission System)로 분류되는 여라 기기중 기존의 전압제어 및 무효 전력보상기들이 가지고 있는 바속응성과 불연속성 문제를 해결해줄 수 있는 정지형 무효전력 보상가(Static Var Compensator : SVC)를 포함한 전력계통에 신경회로망 제어기를 적용하여 안정화에 관하여 연구하였다. 제안된 신경회로망 제어기는 오차와 오차변화량을 입력하는 오차역전과 학습 알고리즘을 사용하고, 학습시간올 단축하기 위해 모멘텀 방법을 사용하였다. 제안된 방법의 강인섬을 입증하기 위해 중부하시 및 정상부하시에 초기 전력을 변동시킨 경우와 초기에 회천자각을 변동시킨 경우에 대하여 시스렘의 회전자각, 각속도 편차 특성 및 단 자전압의 동특성을 고찰하여 다른 시스템보다 응답특성이 우수합을 보였다.

• 한국분말재료학회지
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• 제12권6호
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• pp.447-452
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• 2005

The synthesis and consolidation of titanium silicide by electro-discharge-sintering has been investigated. As-received Ti powder was in flaky shape and the mean particle size was $45.0{\mu}m$, whereas the mean particle size of the pre-milled Si powder with angular shape was $8.0{\mu}m$. Single pulse of 2.5 to 5.0 kJ/0.34g-elemental Ti and pre-milled Si powder mixture with the composition of $Ti-37.5at.\%$ Si was applied using $300{\mu}F$ capacitor. The solid with $Ti_5Si_3$ phase has been successfully fabricated by the discharge with the input energy more than 2.5kJ in less than $129{\mu}sec.$ Hv values were found to be higher than $1000kgf/mm^2$. The formation of $Ti_5Si_3$ occurred through a fast solid state diffusion reaction.

• 한국분말재료학회지
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• 제18권2호
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• pp.149-158
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• 2011

Electro-Discharge Sintering (EDS) employs a high-voltage/high-current-density pulse of electrical energy, discharged from a capacitor bank, to instantaneously consolidate powders. In the present study, a single pulse of 0.57-1.1 kJ/0.45 g-atomized spherical $Ti_{52}Zr_{28}Ni_{20}$ powders in size range of 10~30 and $30\sim50{\mu}m$ consisting of ${\beta}$-(Ti, Zr) and icosahedral phases were applied to examine the structural evolution of icosahedral phase during EDS. Structural investigation reveals that high electrical input energy facilitates complete decomposition of icosahedral phase into C14 laves and ${\beta}$-(Ti, Zr) phases. Moreover, critical input energy inducing decomposition of the icosahedral phase during EDS depends on the size of the powder. Porous Ti and W compacts have been fabricated by EDS using rectangular and spherical powders upon various input energy at a constant capacitance of $450{\mu}F$ in order to verify influence of powder shape on microstructure of porous compacts. Besides, generated heat (${\Delta}H$) during EDS, which is measured by an oscilloscope, is closely correlated with powder size.

• 한국분말재료학회지
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• 제20권5호
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• pp.376-381
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• 2013

Spherical Ti-6Al-4V powders in the size range of 250 and 300 ${\mu}m$ were uniformly doped with nano-sized hydroxyapatite (HAp) powders by Spex milling process. A single pulse of 0.75-2.0 kJ/0.7 g of the Ti-6Al-4V powders doped with HAp from 300 mF capacitor was applied to produce fully porous and porous-surfaced Ti-6Al-4V implant compact by electro-discharge-sintering (EDS). The solid core was automatically formed in the center of the compact after discharge and porous layer consisted of particles connected in three dimensions by necks. The solid core increased with an increase in input energy. The compressive yield strength was in a range of 41 to 215 MPa and significantly depended on input energy. X-ray photoelectron spectroscopy and energy dispersive x-ray spectrometer were used to investigate the surface characteristics of the Ti-6Al-4V compact. Ti and O were the main constituents, with smaller amount of Ca and P. It was thus concluded that the porous-surfaced Ti-6Al-4V implant compacts doped with HAp can be efficiently produced by manipulating the milling and electro-discharge-sintering processes.

• Journal of Electrical Engineering and information Science
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• 제3권2호
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• 한국항공우주학회지
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• 제42권11호
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• pp.981-987
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• 2014

DC/DC 컨버터는 임의의 직류전원을 부하가 요구하는 형태의 직류전원으로 변환시키는 효율이 높은 전력변환기이다. DC/DC 컨버터는 MOSFET(산화물-반도체 전계 효과 트랜지스터), PWM-IC(펄스폭 변조 집적회로) 제어기, 인덕터, 콘덴서 등으로 구성되어있다. MOSFET는 스위치 기능을 수행하는데 코발트 60 ($^{60}Co$) 저준위 감마발생기를 이용한 TID 실험에서 방사선의 영향으로 문턱전압과 항복전압의 변화와 SEGR 실험에 적용된 5종류의 중이온 입자는 MOSFET의 게이트(gate)에 영향을 주어 게이트가 파괴된다. MOSFET의 TID 실험은 40 Krad 까지 수행하였으며, SEGR 실험은 제어보드를 구현한 후 LET(MeV/mg/$cm^2$)별 cross section($cm^2$)을 연구하는데 있다.

• 한국재료학회지
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• 제14권10호
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• pp.688-695
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• 2004

The capacitor contact barrier(CCB) layers have been introduced in the FeRAM integration to prevent the Pt/Al reaction during the back-end processes. Therefore, the interdiffusion and intermetallic formation in $Pt(1500{\AA})/Al(3000{\AA})$ film stacks were investigated over the annealing temperature range of $100\sim500^{\circ}C$. The interdiffusion in Pt/Al interface started at $300^{\circ}C$ and the stack was completlely intermixed after annealing over $400^{\circ}C$ in nitrogen ambient for 1 hour. Both XRD and SBM analyses revealed that the Pt/Al interdiffusion formed a single phase of $RtAl_2$ intermetallic compound. On the other hand, in the presence of TiN($1000{\AA}$) barrier layer at the Pt/Al interface, the intermetallic formation was completely suppressed even after the annealing at $500^{\circ}C$. These were in good agreement with the predicted effect of the TiN diffusion barrier layer. But the conventional TiN CCB layer could not perfectly block the Pt/Al reaction during the back-end processes of the FeRAM integration with the maximum annealing temperature of $420^{\circ}C$. The difference in the TiN barrier properties could be explained by the voids generated on the Pt electrode surface during the integration. The voids were acted as the starting point of the Pt/Al reaction in real FeRAM structure.