• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.178.1-178.1
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• 2015

In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.178.2-178.2
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• 2015

In and Ga doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered Polycarbonate (PC) substrates with RF magnetron sputtering and then the effect of Cu buffer layer on the optical and electrical properties of the films was investigated. While IGZO single layer films show the electrical resistivity of $1.2{\times}10-1{\Omega}cm$, IGZO/Cu bi-layered films show a lower resistivity of $1.6{\times}10-3{\Omega}cm$. Although the optical transmittance of the films in a visible wave length range is deteriorated by Cu buffer layer, IGZO films with 5 nm thick Cu buffer layer show the higher figure of merit of $2.6{\times}10-4{\Omega}-1$ than that of the IGZO single layer films due to the enhanced opto-electrical performance of the IGZO/Cu bi-layered films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.162-163
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• 2013

Single-crystal InGaZnO (IGZO) thin films were spontaneously formed as periodic layered structure along the c-axis by thermal treatment at high temperature. when the IGZO superlattice were synthesized by sol-gel method, the effects of preferred growth orientations and the flatness of ZnO buffer layer were investigated. $InGaO_3(ZnO)_2$ superlattice were favorably formed on ZnO buffer layer with single preferred orientation. Futhermore, it showed relatively high Seebeck coefficient and power factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.4-4
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• 2010

Single-crystalline IGZO (Indium-Gallium-Zinc oxide) was fabricated on c-sapphire substrate. Single crystal ZnO was used as a buffer layer, and post-annealing was treated in $900^{\circ}C$ for crystallization of IGZO. Crystallized IGZO formed superlattice structure spontaneously induced to c-axis direction by ZnO butTer layer, the composition of IGZO was varied by amount of ZnO. Crystallinity and composition of IGZO was analyzed by X-ray Diffraction and Transmission Electron Microscopy.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.1
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• pp.53-63
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• 1997

In this paper, we present a new macroblock-based bit allocation scheme in multiple MPEG-1 video encoders system and a single multiplexer over a single channel. The proposed scheme models the relations between fate(Bits/MB) and distortion(MSE/MB), rate and quantizer parameter(QP), distortion and quantizer parameter, respectively, in the same form. By using these relations, we minimize the Larangian cost function to obtain a bit allocation scheme based on macroblock unit. Experimental results show that the proposed scheme can reduce MSE compared to other conventional buffer-based rate control methods, i.e. independent buffer control method and shared common buffer control one. And we confirmed, through computer simulation, that the proposed scheme can be effectively modified to maintain the objective quality of a specific video service at a constant level.

• Journal of the Korean Operations Research and Management Science Society
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• v.31 no.1
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• pp.1-13
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• 2006

In this paper we consider a design problem of a cyclic queueing network with two stages, each with a local buffer of limited capacity. Based on the theory of reversibility and product-form solution, we derive the throughput function of the network as a key performance measure to maximize. Two cases are considered. In case each stage consists of a single server, an optimal allocation policy of a given buffer capacity and work load between stages as well as the optimal number of customers is identified by exploiting the properties of the throughput function. In case each stage consists of multiple servers, the optimal policy developed for the single server case doesn't hold any more and an algorithm is developed to allocate with a small number of computations a given number of servers, buffer capacity as well as total work load and the total number of customers. The differences of the optimal policies between two cases and the implications of the results are also discussed. The results can be applied to support the design of certain manufacturing and computer/communication systems.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.20-22
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• 2003

Y$_2$O$_3$ films were pulsed laser deposited on cube textured Ni and Ni-W substrates to be used as a single buffer layer of YBCO coated conductor. Initial deposition of $Y_2$O$_3$ films was performed in a reducing atmosphere, and subsequent deposition was done in the base pressure of the chamber and oxygen atmosphere. The $Y_2$O$_3$ films have a strong cube texture (The full width at half maximum of the ø-scan of $Y_2$O$_3$ was 8.4 which was the same as that of metal substrate) and smooth crack-free microstructure. The biaxially textured YBCO films (The full width at half maximum of the ø-scan was 10.2) pulsed laser deposited on the $Y_2$O$_3$/metal exhibited Tc(R=0) of 86.5K and Jc of 0.7 MA/cm2 at 77K in self field, representing that the $Y_2$O$_3$ single buffer layer is an efficient diffusion barrier of Ni and thus very promising for the achievement of high-Jc YBCO coated conductor.

• Progress in Superconductivity and Cryogenics
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• v.6 no.2
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• pp.7-10
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• 2004

A study regarding the epitaxial growth of single $Y_2O_3$ buffer layer on biaxially textured Ni and NiW substrates using pulsed laser deposition is presented. Different deposition conditions were employed and compared in order to obtain good epitaxial $Y_2O_3$ film, furthermore importantly, to obtain good YBCO superconducting films. Following YBCO film deposited by PLD on the top of $Y_2O_3$ films have a good structure and superconducting properties. The J$_{c}$ of YBCO films on $Y_2O_3$ /Ni and $Y_2O_3$ /NiW were $1.0{\times}10^6 A/cm^2 and 1.1\times}10^6 A/cm^2$<.TEX> at 77K and self-field respectively, which indicated that $Y_2O_3$ is a suitable candidate as a single buffer layer for the fabrication of YBCO coated conductor.r.

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.943-947
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• 2003

We have studied the migration behavior of single-stranded DNA using capillary gel electrophoresis under various conditions. It was found that optimum electric fields should be less than 150 V/cm for the good tradeoff between the separation time and the resolution. It seems that the gel matrix with the combination of different polymer average molecular weights is important to extend the maximum readable DNA bases. The total gel concentration less than 3.1% in the mixed gel system showed good separation efficiency up to 600 bases. The best result was obtained with the poy(ethylene)oxide (PEO) gel concentration of 1.2% of Mr 8,000,000 and 1.8% of Mr 600,000. We observed that the capillary length between 50 cm to 100 cm (effective length) should be employed for the optimization between the total DNA migration time and the maximum readable length. A trizma base-boric acid-ethlyenediaminetetraacetic acid (EDTA) (TBE) buffer was commonly used for DNA sequencing, but we found that 3-[tris(hydroxymethyl)methyl amino]-1-propane sulfonic acid (TAPS) buffer worked as well for the single-stranded DNA separation. Especially, TAPS buffer showed a good resolution for very short DNA bases (1 to 30 bases).

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.