• Composites Research
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• v.31 no.2
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• pp.51-56
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• 2018

A new study was carried out to utilize a pencil drawing paper sensor (PDPS), which drew a line using a pencil on the paper, as a sensor. The sensing effect on 3 different papers based on the properties of PDPS was compared. The specimens were prepared by drawing 4B pencils on plain (A4), Hwasun, and Han papers. The silver paste was used to give good electrical contacts of the copper wires and the pencil drawn line. The chemical structures of 3 papers for PDPS by FT-IR spectrum analysis were similar and the comparative compact states of each paper were observed by optical microscope. From statistical evaluation of tensile strength using 3 papers, plain paper was chosen to be best for the PDPD. The optimum drawing number of PDPD was determined by changing the thickness of the paper with the drawing number. Electrical resistance (ER) with graphite on 3 different papers were compared. The changes in compression was observed through cyclic compressive test of composite materials, it was possible to predict the degree of strain sensing under compressive test. It leads to expectation of properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.153-153
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• 2010

Recently, to develop GaN-based light-emitting diodes (LEDs) with better performances, various approaches have been suggested by many research groups. In particular, using the patterned sapphire substrate technique has shown the improvement in both internal quantum efficiency and light extraction properties of GaN-based LEDs. In this paper, we discuss the influences of the direction of the hexagonal-structure arrays of lens-shaped patterns (HSAPs) formed on sapphire substrates on the crystal, optical, and electrical properties of InGaN/GaN multi-quantum-well (MQW) LEDs. The basic direction of the HSAPs is normal (HSAPN) with respect to the primary flat zone of a c-plane sapphire substrate. Another HSAP tilted by 30o (HSAP30) from the HSAPN structure was used to investigate the effects of the pattern direction. The full width at half maximums (FWHMs) of the double-crystal x-ray diffraction (DCXRD) spectrum for the (0002) and (1-102) planes of the HSAPN are 320.4 and 381.6 arcsecs., respectively, which are relatively narrower compared to those of the HSP30. The photoluminescence intensity for the HSAPN structure was ~1.2 times stronger than that for the HSAP30. From the electroluminescence (EL) measurements, the intensity for both structures are almost similar. In addition, the effects of the area of the individual lens pattern consisting of the hexagonal-structure arrays are discussed using the concept of the planar area fraction (PAF) defined as the following equation; PAF = [1-(patterns area/total unit areas)] For the relatively small PAF region up to 0.494, the influences of the HSAP direction on the LED characteristics were significant. However, the direction effects of the HSAP became small with increasing the PAF.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.413-417
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• 2014

The effect of calcination treatment of raw powders prior to high temperature synthesis of Ca-${\alpha}$-SiAlON:$Eu^{2+}$ phosphor was investigated. Based on data acquired from thermogravimetric analysis, calcination temperatures were set at 600, 750, and $900^{\circ}C$. Compared to the photoluminescence (PL) intensity of direct synthesis without calcination, a similar intensity was found for the $600^{\circ}C$ treatment, a 19% increased PL intensity was found for the $750^{\circ}C$ treatment, and a 23% decreased PL intensity was found for the $900^{\circ}C$ treatment. Observation of the particle morphology of the synthesized phosphors revealed that the material transport promoted through the agglomerates formed by the $750^{\circ}C$ treatment led to enhanced PL intensity. On the other hand, the oxidation of the starting AlN particles during the $900^{\circ}C$ treatment resulted in decreased photoluminescence.

• Journal of the Korean housing association
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• v.26 no.4
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• pp.23-32
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• 2015

The purpose of this research is to analyze characteristics and related factors of IAQ (Indoor Air Quality) in newly built wooden houses by measuring pre and post occupancy. The subjects were five wooden houses which were built with similar materials and completed from July to December 2013. Measuring factors were TVOC, HCHO, PM10, $CO_2$, CO, indoor temperature, and relative humidity. As the result of pre occupancy measuring, the houses that revealed the lowest TVOC concentration or HCHO concentration were satisfied with "the standard for newly built apartment houses". Therefore, IAQ by the wooden structures is considered to be in good condition. However, in cases of partial value exceeded the standard, the reason is analyzed to be the materials of molding, wrapping doors, built-in closet, or kitchen furniture, etc. rather than structure materials. Most PM10 concentration level showed slightly below "the standard for occupied multi-use facilities". Remaining of construction dust was considered to be the reason. As the result of post occupancy measuring, every value except of one subject's TVOC concentration was lower than pre occupancy, explaining the importance of natural ventilation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.162-162
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• 2012

ZnPc and CuPc molecules stacked similar way in the film, but showed different growth modes in thermal evaporation. The distribution of CuPc crystals did not change by the film thickness, whereas the distribution of ZnPc became random as the increase of the film thickness. The disc type nanograins of CuPc were quite regularly distributed at the initial growth regime and the regular distribution of nanograins was kept during the film growth. On the other hand, ZnPc consisted in ellipsoid shaped nanograins and the distribution of nanograins was not regular in the initial growth regime. The irregular distribution of nanograins changed to the regular mode at the later growth regime by showing structure factor in GISAXS measurement. The different initial nanograin distribution in ZnPc and CuPc was related to the different nanostructure in the mixed layer with C60 to form the bulk heterojunction.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.79-79
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• 2012

A high temperature and a low temperature plasma process technologies were developed and demonstrated for synthesis, hybrid formation, surface treatment and CVD engineering of nano powder. RF thermal plasma is used for synthesis of spherical nano particles in a diameter ranged from 10 nm to 100 nm. A variety of nano particules such as Si, Ni, has been synthesized. The diameter of the nano-particles can be controlled by RF plasma power, pressure, gas flow rate and raw material feed rate. A modified RF thermal plasma also produces nano hybrid materials with graphene. Hemispherical nano-materials such as Ag, Ni, Si, SiO2, Al2O3, size ranged from 30 to 100 nm, has been grown on graphene nanoplatelet surface. The coverage ranged from 0.1 to 0.7 has been achieved uniformly over the graphene surface. Low temperature AC plasma is developed for surface modification of nano-powder. In order to have a three dimensional and lengthy plasma treatment, a spiral type of reactor has been developed. A similar plasma reactor has been modfied for nano plasma CVD process. The reactor can be heated with halogen lamp.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.39-43
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• 2011

Effects of cavity material on the Q-factor measurement of microwave dielectric materials were studied by HFSS simulation and the measurements using metal cavity. $TE_{01\delta}$ mode resonant frequency was determined from the electric and magnetic field patterns and the loaded Q-factor was calculated from 3dB bandwidth of $S_{21}$ spectrum. When the cavity metal materials were Cu, SUS and Au cavity, the level of Q-factor was similar. However, Q-factor was significantly decreased when the cavity metal material was CuO. The Q-factor measurements of dielectric resonator by network analyzer using various metal cavity exhibits consistent behavior.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.1-7
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• 2017

Aluminum alloys have been widely used in many fields such as electronic, structure, aero-space and vehicle industries due to their outstanding thermal and electrical conductivity as well as low cost. However, they have some difficulties for using in brazing process because of the strong oxide layer of $Al_2O_3$ on the surface of Al alloy. In addition, their melting point is similar to that of brazing filler metal resulting in thermal damage of Al alloys. Therefore, it is very important to understand the brazing principles, filler metal and its properties such as wetting, capillary flow and dissolution of base metal in the Al brazing process. This paper reviews the brazing principles, aluminum alloys, and brazing fillers. In the case of brazing principle, some formula was used for calculation of capillary force and the dissolution to obtain the best condition of Al brazing. In addition, the advanced research trends in Al brazing were introduced including thermal treatment, additive for improving property and decreasing melting point in Al brazing process.

• Korean Journal of Materials Research
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• v.27 no.8
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• pp.397-402
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• 2017

We used an etching process to control the line-width of screen printed Ag paste patterns. Ag paste was printed on anodized Al substrate to produce a high power LED. In general, Ag paste spreads or diffuses on anodized Al substrate in the process of screen printing; therefore, the line-width of the printed Ag paste pattern increases in contrast with the ideal line-width of the pattern. Smudges of Ag paste on anodized Al substrate were removed by neutral etching process without surface damage of the anodized Al substrate. Accordingly, the line-width of the printed Ag paste pattern was controlled as close as possible to the ideal line-width. When the etched Ag paste pattern was used as a seed layer for electroless Ni plating, the line width of the plated Ni film was similar to the line-width of the etched Ag paste pattern. Finally, in pattern formation by Ag paste screen printing, we found that the accuracy of the line-width of the pattern can be effectively improved by using an etching process before electroless Ni plating.

• Journal of Surface Science and Engineering
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• v.38 no.1
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• pp.44-48
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• 2005

We prepared nickel silicide layers from p-Si(l00)/SiO₂(2000 Å)/poly-Si(700 Å)/Ni(400 Å) structures, feasible for gates in MOSFETs, by annealing them from 500℃～900℃ for 30 minutes. We measured the color coordination in visible range, cross sectional micro-structure, and surface topology with annealing temperature by an UV-VIS-IR spectrometer, field effect scanning electron microscope(FE-SEM), and scanning probe micro-scope respectively. We conclude that we may identify the nickel silicide by color difference of 0.90 and predict the silicide process reliability by color coordination measurement. The nickel silicide layers showed similar thickness while the columnar grains size and surface roughness increased as annealing temperature increased.