• KCI Concrete Journal
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• v.11 no.3
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• pp.89-97
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• 1999

The purpose of this research is to investigate the utilization of recycled fine aggregates as a material to apply to a building finished walls or as a decorating material in combination with a polymer. The strengths of two resin mortars using recycled fine aggregates and natural fine aggregates was made. In order to improve the workability and the strength of the resin mortar with recycled fine aggregates, partial replacement of recycled fine aggregates with natural ones was made with the application of various type of fillers. The results, it show that the compressive strength and flexural strength of resin mortar using the recycled fine aggregates were about 70% to 100% of those of resin mortar using natural fine aggregates. It was enough to assure the utilization of the recycled fine aggregates as a material for the production of resin mortar. From the result of partial replacement of recycled fine aggregates with natural ones, the compressive strength was Increased from 5% to 15% and the flexural strength was much as 5% to 20% as a result of 70% substitution It was also found that the use of garnet powder shows a similar tendency in the compressive strength and slag powder does in the flexural strength and tensile strength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.760-763
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• 2004

We studied the nematic liquid crystaL(NLC) aligning capabilities using the new alignment material of a nitrogenated diamond-like carbon(NDLC) thin film. The NDLC thin film exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) thin films. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. A high pretilt angle of about 9.9$^{\circ}$ by ion beam(IB) exposure on the NDLC thin film surface was measured. A good LC alignment is achieved by the IB alignment method on the NDLC thin films surface at annealing temperature of 200 $^{\circ}C$. The alignment defect of the NLC was observed above annealing temperature of 250 $^{\circ}C$. Consequently, the high pretilt angle and the good LC alignment by the IB alignment method on the NDLC thin film surface can be achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.592-597
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• 2004

Porous silicon(PS) has received much attention as a sensitive material of chemical sensors because of its large internal surface area. In this work, we fabricated gas-sensing devices based on the porous silicon layer which could be applicable to the measurement of blood alcohol content(BAC), and estimated their electrical properties. The structure of the sensor is similar to an MIS (metal-insulator-semiconductor) diode and consists of thin Au/oxidized PS/PS/p-Si/Al, where the p-Si substrate is etched anisotropically to reduce the thickness. We measured C-V curves from two types of the samples with the PS layer treated by the different anodization current density of 60 or 100 mA/cm$^2$, in order to compare the sensitivity. As a result, the magnitude and variation of capacitances from the devices with the PS formed under the current density of 100 mA/cm$^2$ were found to be more detectable due to the larger internal surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.137-140
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• 2003

Cu+ ions drift diffusion in different dielectric materials is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 1.lMV/cm and temperature $200^{\circ}C$, $250^{\circ}C$, $300^{\circ}C$ for 1H, 2H, 5H. The Cu+ ions drift rate of polyimide$(2.8{\leq}k{\leq}3.2)$ is considerably lower than thermal oxide. Also Cu+ drift rate of polyimide is similar to PECVD oxide. But, polyimide film is even more resistant to Cu drift diffusion and thermal effect than Thermal oxide, PECVD oxide: This results got a comparative reference. The important conclusion is that polyimide film is strongly dielectric material by thermal effect and Cu drift diffusion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.71-74
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• 2003

Photoconductor for direct detection fiat-panel imager present a great materials challenge, since their requirement include high X-ray absorption, ionization and charge collection, low leakage current and large area deposition, CdTe is practical material. We report studies of detector sensitivity, That is an CdTe with $5{\mu}m$ thickness on glass. That is hybrid layer of depositting ZnS:AgCl phosphor with $100{\mu}m$ on CdTe. The leakage current of hybrid is similar to it of a-Se, but photocurrent is larger than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.23-26
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• 2004

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a Carbon Nitride (NDLC) thin film. NDLC thin film exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) thin films. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. A high pretilt angle of about $9.9^{\circ}$ by ion beam (IB) exposure on the NDLC thin film surface was measured. A good LC alignment is achieved by the IB alignment method on the NDLC thin film surface at annealing temperature of $200^{\circ}C$. The alignment defect of the NLC was observed above annealing temperature of $250^{\circ}C$. Consequently, the high pretilt angle and the good LC alignment by the IB alignment method on the NDLC thin film surface can be achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.571-572
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• 2006

Tungsten CMP needs interconnect of semiconductor device ULSI chip and metal plug formation, CMP technology is essential indispensable method for local planarization. This Slurry development also for tungsten CMP is important, slurry of metal wiring material that is used present is depending real condition abroad. It is target that this research makes slurry of efficiency that overmatch slurry that is such than existing because focus and use colloidal silica by abrasive particle to internal production technology development. Compared selectivity of slurry that is developed with competitor slurry using 8" tungsten wafer and 8" oxide wafer in this experiment. And removal rate measures about density change of $H_2O_2$ and Fe particle. Also, corrosion potential and current density measure about Fe ion and Fe particle. As a result, selectivity find 83:1, and expressed similar removal rate and corrosion potential and current density value comparing with competitor slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.252-252
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• 2007

$Al_2O_3-TiO_2$(AT)ceramics shows great promise as a dielectric material for millimeter-wave use. The sintering temperature of AT ceramics was approximately $1450^{\circ}C$ and decreased to $900^{\circ}C$ with the addition of BaCu(B2O5) (BCB) ceramic powder. The presence, of the liquid phase was responsible for the decrease of the sintering temperature. The liquid phase is considered to have a composition similar to the BaO-deficient BCB. The Q-value initially increased with the addition of BCB, but decreased considerably when a large amount of BCB was added, because of the presence of the liquid phase. Good microwave dielectric properties of $Q{\times}f\;=\;16,200\;GHz$, ${\varepsilon}_r\;=\;9$ and ${\tau}_f\;=\;-4\;ppm/^{\circ}C$ were obtained for the 20.0 mol% BCB-added AT ceramics sintered at $900^{\circ}C$ for 2 h.

• Korean Journal of Metals and Materials
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• v.50 no.3
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• pp.224-232
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• 2012

In this study, the effect of hot-stamping heat treatment on the microstructure and hardness of TWB(Tailor Welded Blank) laser joints in Al-Si-coated boron steel and Zn-coated DP(Dual Phase)590 steel was investigated. In the TWB joints without heat treatment, hardness profiles showed local hardness deviation near the fusion zone. However, there was no hardness deviation in the heat treated specimen and its hardness was higher than that of the one without the heat treatment, due to a fully martensite microstructure. In the TWB joints of both the boron and DP steels, the maximum hardnesses were observed at the HAZ(Heat Affected Zone) near the base metal, and the hardness decreased gradually to the base metal. In the heat treated joints, the hardnesses of the HAZ and the base metal of the boron steel side were similar to the maximum hardness of the weld, while those of the HAZ and the base metal of the DP steel side were higher than the maximum hardness.