• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.470-480
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• 2016

The reversal of a silicon chip to find out its security structure is common and possible at the present time. Thanks to reversing, it is possible to use a probing attack to obtain useful information such as personal information or a cryptographic key. For this reason, security-related blocks such as DES (Data Encryption Standard), AES (Advanced Encryption Standard), and RSA (Rivest Shamir Adleman) engines should be located in the lower layer of the chip to guard against a probing attack; in this regard, the addition of a silicon-surface-protection layer onto the chip surface is a crucial protective measure. But, for manufacturers, the implementation of an additional silicon layer is burdensome, because the addition of just one layer to a chip significantly increases the overall production cost; furthermore, the chip size is increased due to the bulk of the secure logic part and routing area of the silicon protection layer. To resolve this issue, this paper proposes a practical silicon-surface-protection method using a metal layer that increases the security level of the chip while minimizing its size and cost. The proposed method uses a shift register for the alternation and variation of the metal-layer data, and the inter-connection area is removed to minimize the size and cost of the chip in a more extensive manner than related methods.

• Journal of the Korean institute of surface engineering
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• v.17 no.2
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• pp.29-40
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• 1984

The structure of rapidly solidified Al-Si-based alloys and its relationship to subsequent anodic film growth in near neutral and acid solutions have been investigated. Solidification of the alloys proceeds via pre-dendritic nuclei, associated with rugosity of the casting surface, from which cellular-type growth, comprised of aluminium-rich material surrounded by silicon-containing material, emanates. Observation of ultramicrotomed sections of the alloys and their anodic films reveals the local oxidation of the silicon-rich phase and its incorporation into the anodic alumina film, formed in near neutral solutions. Such incorporation occurs but resultant isolation of the silicon-rich phase is not possible for anodizing in phosphoric acid, and a three-dimensional network of the oxidized silicon-containing phase, with continuing development of porous anodic alumina, is observed.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.84-87
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• 2014

Protection of solar cell surface is important to prevent from dust, pollen, sand, etc. Therefore, development of large area antifouling film is urgent for high performance of solar cells. The surface of silica spheres was modified to fabricate large area antifouling film. The surface of monodisperse silica spheres has been modified with 3-(trimethoxysilyl) propylmethacrylate (TMSPM) to fabricate large area photonic crystal. Although the surface modification of silica spheres with TMSPM has been failed for the base catalyst, the second trial using acid catalyst showed the following results. The FTIR absorption peak at $1721cm^{-1}$ representing C=O stretching vibration indicates that the TMSPM was attached on the surface of silica spheres. The methanol solution comprised of the surface modified silica spheres (average diameter of 380 nm) and a photoinitiator was poured in the patterned silicon wafer with the dimension of 10 cm x 10 cm and irradiated UV-light during the self-assembly process. The result showed large area crack and defect free nanostructures.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.44-44
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• 2014

Magnesium alloy AZ31 sheet를 자동차용 부품으로 사용하기 위해서는 내식성, 전착도장성등의 신뢰성을 확보해야 한다. 이를 위해서 우리는 Phosphate, manganese, silicon계열의 화성처리제를 이용하여 자동차 부품으로 사용가능한 신뢰성확보를 위해 표면처리 방법에 관한 연구를 진행 하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.

• ETRI Journal
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• v.24 no.5
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• pp.398-400
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• 2002

Using $Cr_2O_3$ thin film, we developed a novel etch-stop technique for the protection of silicon surface morphology during deep ion coupled plasma etching of silica layers. With this technique we were able to etch a silica trench with a depth of over 20 ${\mu}m$ without any damage to the exposed silicon terrace surface. This technique should be well applicable to fabricating silica planar lightwave circuit platforms for opto-electronic hybrid integration.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.119-119
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• Nuclear Engineering and Technology
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• v.55 no.6
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• pp.2158-2165
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• 2023

Marine radioactivity monitoring is critical for taking immediate action in case of unexpected nuclear accidents at nuclear facilities located near coastal areas. Especially when the level of contamination is not predictable, mobile monitoring systems will be useful for wide-area ocean radiation survey and for determination of the level of radioactivity. Here, we used a silicon photomultiplier and a high-efficiency GAGG crystal to fabricate a compact, battery-powered gamma spectroscopy that can be used in an ocean environment. The developed spectroscopy has compact dimensions of 6.5 × 6.5× 8 cm³ and weighs 560 g. We used LoRa, a low-power wireless protocol for communication. Successful data transmission was achieved within 1.4 m water depth. The developed gamma spectroscopy was able to detect radioactivity from a ¹³⁷Cs point source (3.7 kBq) at a distance of 20 cm in water. Moreover, we demonstrated an unmanned radioactivity monitoring system in a real sea by combining unmanned surface vehicle with the developed gamma spectroscopy. A hidden ¹³⁷Cs source (3.07 MBq) was detected by the unmanned system at a distance of 3 m. After successfully testing the developed mobile spectroscopy in an ocean environment, we believe that our proposed system will be an effective solution for mobile real-time marine radioactivity monitoring.

• Journal of the Korean Recycled Construction Resources Institute
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• v.7 no.4
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• pp.295-301
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• 2019

Currently, the most commonly used decontamination agent in the country is calcium chloride, and the use of decontamination agents nationwide is on the rise due to climate change in the country. The deicing agent, aimed at deicing snow, is sprayed and the chloride is frozen and thawed by the dissolved surface water, causing various damages such as deterioration to the concrete. Therefore, in this study, the reactive urethane polymer was manufactured to coat concrete surface protection material, which is a method that prevents moisture from externally penetrating by applying to concrete surfaces, and the mixing agent was selected through the size control of molecules and surface modification, and the properties of penetrant stiffening agents and the application method of concrete was evaluated.

• Applied Chemistry for Engineering
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• v.33 no.3
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• pp.296-301
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• 2022

Due to the fact that zirconium based metal-organic frameworks (Zr-MOFs), such as UiO-66, have a large specific surface area and excellent selective adsorption capacity, Zr-MOFs are gaining attention as materials that can provide protection from the attack of chemical warfare agents in battleground. However, most of the metal-organic frameworks have an issue of selective adsorption capacity degraded by water molecules when exposed to the atmosphere, because of the weak metal-organic ligand bonds and the presence of voids. Therefore, polydimethylsiloxane (PDMS), a representative hydrophobic polymer material, was coated on the surface of UiO-66 to enhance the sustainability of the diisopropyl methylphosphonate (DIMP) sorption capacity in the battleground condition. Through the analysis of surface structure and organic functional group distribution of PDMS coated UiO-66, silicon was confirmed to be evenly coated. The contact angle increased by over 30° for the PDMS coated UiO-66, indicating that the hydrophobicity was improved. In addition, both the UiO-66 and PDMS coated UiO-66 were used as adsorbents for DIMP, a similar chemical warfare agent, to investigate the durability of adsorption capacity in a high humidity environment. The PDMS coated UiO-66 showed higher durability of adsorption capacity for 20 days than that of pristine UiO-66.