• Korean Journal of Optics and Photonics
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• v.17 no.4
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• pp.371-380
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• 2006

We design and fabricate a novel tunable wavelength filter, which utilizes long-range surface plasmon-polaritons excited along nm-thick-metal strips. A gold metal strip, with $\sim$ cm length, 20 nm thickness, and $\sim$ 5$\mu$m width, is embedded in thick thermo-optic Polymer films supported by a silicon wafer. A dielectric Bragg grating structure is Placed on the metal strip, so that transmission signals at telecom wavelength are selected by thermal effect of the thermo-optic polymer. High extinction ratio of 25 dB and total insertion loss of $\sim$25 dB/cm can be measured by single-mode coupling of optical fibers. We also verify that wavelength tuning of the long-range surface plasmon-polariton filters can be achieved by electric current directly applied to the metal-strip waveguides.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.131-131
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• 2003

The advent of photonic technologies in the field of communications and data transmission has been heavily increasing the demand in integrated optical (IO) circuits capable of accomplishing not only simple tasks like signal, but also more sophisticated functions like all-optical signal routing or active multiplexing/demultiplexing. In the last decade, sol-gel technology has been widely used to prepare optical materials. Sol-gel processes show many promises for the development of low-loss, high-performance glass integrated optical circuits. However, crack formation is likely to occur during heat treatment in thick gel films. In order to overcome the critical thickness limitation, the organic-modified silicate has been widely used. In this case coating matrices have been prepared from the organo-silanes of T structures, acidic catalyst and the as-prepared gel films have been heat-treated below 200$^{\circ}C$ to avoid the crack formation and the degradation of organic components. However, the films prepared in the acidic condition and the low heat temperature make the films contain high OH groups which is the major optical loss function. In this work, C$\sub$6/H$\sub$5/SiO$\sub$1.5/ films were prepared on silicon substrate by sol-gel method using base catalyst in a PTMS/NH$_4$OH/H$_2$O/C$_2$H$\sub$5/OH system. The sol showed spinable viscosity at 50 wt% of solid content, and neglectable viscosity change with time. The films were crack-free and transparent after curing at 450 $^{\circ}C$, and highly condensed to minimize OH content in C$\sub$6/H$\sub$5/SiO$\sub$1.5/ networks. The effects of heat treatment of the films are characterized on the critical thickness, the chemical composition and the refractive indices by means of SEM, FT-IR, TGA, prism coupler, respectively.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.504-508
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• 2003

We present a new point-diffraction interferometer, which has been devised for the three-dimensional profile measurement of light scattering rough surfaces. The interferometer system has multiple sources of two-point-diffraction and a CCD camera composed of an array of two-dimensional photodetectors. Each diffraction source is an independent two-point-diffraction interferometer made of a pair of single-mode optical fibers, which are housed in a ceramic ferrule to emit two spherical wave fronts by means of diffraction at their free ends. The two spherical wave fronts then interfere with each other and subsequently generate a unique fringe pattern on the test surface. A He-Ne source provides coherent light to the two fibers through a 2${\times}$l optical coupler, and one of the fibers is elongated by use of a piezoelectric tube to produce phase shifting. The xyz coordinates of the target surface are determined by fitting the measured phase data into a global model of multilateration. Measurement has been performed for the warpage inspection of chip scale packages (CSPs) that are tape-mounted on ball grid arrays (BGAs) and backside profile of a silicon wafer in the middle of integrated-circuit fabrication process. When a diagonal profile is measured across the wafer, the maximum discrepancy turns out to be 5.6 ${\mu}{\textrm}{m}$ with a standard deviation of 1.5 ${\mu}{\textrm}{m}$.

• Journal of IKEEE
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• v.24 no.2
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• pp.409-418
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• 2020

In this paper, an integrated optical, evanescent-wave biosensor utilizing a multimode interferometer based on a Si₃N₄ rib-optical waveguide consisting of the Si/SiO₂/Si₃N₄/SiO₂ stacked structure was described. The theoretical background of the multimode interferometer was reviewed, and the structure and design process were presented through numerical computational analysis. We analyzed how the dimension (length, width) of the multimode interferometer affected the sensor performance. It has been confirmed through computational analysis that the changes in the refractive index of an analyte greatly affect the mode pattern formation position and output optical power of a multimode interferometer, and proved that this principle could be applied to integrated-optic biosensor.

• Korean Journal of Optics and Photonics
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• v.28 no.6
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• pp.361-365
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• 2017

In this paper, we demonstrate a facile fabrication technique for a periodically aligned metal nanoparticle array, for a narrow-band plasmonic absorber. The metal nanoparticles are fabricated by e-beam evaporation and heat treatment processes on top of a periodic aluminum groove template. The plasmonic absorber is constructed with the transferred metal nanoparticle array, sputtered 33-nm-thick $Al_2O_3$, and 200-nm-thick metal reflector layers on silicon substrate. 46-nm-diameter and 76-nm-lattice metal-nanoparticle-array-based plasmonic absorber has performed as a narrow-band absorber with a central wavelength of 572 nm and full width at half maximum (FWHM) of 109.9 nm.

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.266-275
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• 1993

We made $P_2O_5-SiO_2$ films on silicon for integrated optics application by low pressure chemical vapor deposition using TEOS (tetraethylorthosilicate) and TMPite (trimethylphosphite) and studied the deposition characteristics. The activation energy of the reaction was changed from 54.6 kcal/mole to 39.2 kcal/mole by incorporating the TMPite into the reaction of TEOS. The deposition rate and the P concentration of films increased in proportion to the flow of TMPite. As the deposition temperature increased, the deposition rate of the films increased but the P concentration decreased. The fabricated films showed the increase of refractive index of 0.0019 per 1 wt% of P concentration. The nonuniformity of films was ${\pm}$7% in thickness and ${\pm}$0.5wt% in P concentration and we showed this'nonuniformity is due to the nonuniform transport of TMPite. The films of more than 10wt% P concentration developed phosphoric acid on its surface when exposed to air for long time.

• Korean Journal of Optics and Photonics
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• v.22 no.2
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• pp.77-82
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• 2011

Reproducibility obtained by a minimum-volume cell for photoacoustic (PA) signals is strongly dependent upon the sealing materials and sealing efficiency. Therefore, we have proposed, designed, and constructed an apparatus to enhance the sealing efficiency, and we have examined the reproducibility of amplitude and phase of PA signals with a minimum-volume cell. In particular, we have measured the PA signal as a function of modulation frequency for various rubber O-rings by using our apparatus. The results show that a silicon rubber O-ring can improve the reproducibility of the PA signal and phase by up to 53.4% and 80.4%, respectively, compared to that obtained by using the conventional sealing material, vacuum grease.

• Korean Journal of Optics and Photonics
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• v.19 no.3
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• pp.224-228
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• 2008

A highly sensitive integrated photonic temperature sensor was proposed and developed incorporating a polymeric microring resonator. The change in the ambient temperature was estimated by observing the shift in the resonant wavelength of the resonator induced via the thermooptic effect. For the purpose of enhancing its sensitivity, the sensor was built by implementing a polymeric resonator exhibiting a high thermooptic coefficient on a silicon substrate with a small coefficient of thermal expansion. For the range of from $20^{\circ}C$ to $30^{\circ}C$ near the room temperature, the fabricated sensor yielded a sensitivity of as high as 165 ${\pm}/^{\circ}C$ and a resolution of better than $0.1^{\circ}C$. And its performance was found to be hardly affected by the variation in the refractive index of the target analyte, which was applied to the surface of the sensor. It is hence expected that the sensor could be integrated with other refractormetric optical sensors, thereby compensating for the fatal error caused by the change in the ambient temperature.

• Korean Journal of Optics and Photonics
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• v.6 no.3
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• pp.233-238
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• 1995

'#65279;We made $P_2O_5-SiO_2$ films on silicon for integrated optics application by low pressure chemical vapor deposition using TEOS(tetraethylorthosilicate), TMPite(trimethylphosphite) and phosphine($PH_3$). And We studied and compared between TMPite and PH, as a dopant of P in PSG films in the aspect of the de,position characteristics. Deposition rate of TMPate-PSG films was $55 \AA/min$ which was smaller than 90 A/min , that of $PH_3-PSG$ films. Thickness deviation of TMPate-PSG films was 2% and that of PH3-PSG was 4.5%. So TMPate-PSG films had a good quality in thickness uniformity. The range of refractive index was controlled from 1.445 to 1.468 at 633 nm in TMPate-PSG films and it was controlled from 1.456 to 1.476 in $PH_3-PSG$ films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.525-529
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• 2017

Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.