• Korean Journal of Materials Research
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• v.12 no.4
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• pp.269-273
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• 2002

The NASICON solid electrolyte films, $Na_{1+x}Zr_2Si_xP_{3-x}O_{12}$(1.5< x < 2.3), was prepared from ceramic slurry by modified doctor-blade process. The NASICON solid electrolyte and fabricated sensors, Pt-electrode/NASICON/Carbonate$(Na_2CO_3-K_2CO_3CaCO_3\; system)$ electrode, were investigated to measure phase, microstructure and e.m.f variation for sensing $CO_2$ concentration. The uniform grain size of $2-4{\mu}m$ and major phase of sodium zirconium silicon phosphate phase, $Na_{1+x}Zr_2Si_xP_{3-x}O_{12}$was identified with X-ray diffraction patterns and scanning electron microscopy, respectively. The Nernst's slope of 84 mV/decade for $CO_2$ concentration from 500 to 8000 ppm was obtained at operating temperature of $400^{\circ}C$.

• Resources Recycling
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• v.17 no.2
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• pp.36-45
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• 2008

Pickling of oxidized 304 stainless steel has been investigated using rotating disk electrode in waste acid solutions generated from the etching process of silicon wafer in order to recycle them. The waste acid solution contained acetic, nitric, hydrofluoric acids, and silicon of $19.6g/L^{-1}$. Electrochemical behavior during the pickling was distinctively different between the original and silicon-removed acid solutions. Open circuit potential was continuously changed in the original solution, while it was discontinuously changed and fluctuated in the silicon-removed solution. Fast and abrupt removal of surface oxide layer with severe pitting was observed in the silicon-removed solution. It was found that solution temperature had the most influential effect on glossiness. Surface glossiness after pickling was decreased with solution temperature. At the same condition, the glossiness was higher in the original solution than in the silicon-removed solution.

• Journal of the Korean Electrochemical Society
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• v.19 no.3
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• pp.87-94
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• 2016

In order to improve performances of submicrometer-sized Si negative electrode which shows larger volumetric change than nano-sized Si, composite binders are introduced by blending between poly(phenanthrenequinone) (PPQ) conductive polymer binder and poly(acrylic acid) (PAA) having good adhesion strength due to its carboxyl functional group. Blending between PPQ and PAA shows an effect that the adhesion strength of the Si electrode with the composite conductive binder is greatly improved after blending and this makes its better stable cycle performance. Blending ratios between PPQ and PAA in this work are 2:1, 1:1, 1:2 (by weight) and the best capacity retention at 50th cycle is observed in the electrode with the blending ratio 2:1 (named QA21). This is because that PPQ plays a role of conductive carbon among the Si particles or between Si particles and Cu current collector and PAA binds effectively the particles and the current collector. According to this synergetic effect, the internal resistance of the Si electrode with the blending ratio 2:1 is the smallest value. In addition, the Si electrode with PPQ-PAA composite binder shows the better stable cycle performance than the electrode with conventional super-P conductive carbon (20 wt.%).

• Journal of the Korean Chemical Society
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• v.60 no.5
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• pp.299-309
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• 2016

In this study, the physicochemical and electrochemical properties of carbon nanomaterials and synthesized nano-carbon/Si composites were studied. The nano-carbon/Si composites were ball-milled to a nano size and coated with pyrolytic carbon using Chemical Vapor Deposition (CVD). They were then finely mixed with respective nano-carbon materials. The physicochemical properties of samples were analyzed using Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Raman spectroscopy, X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), and surface area analyzer. The electrochemical characteristics were investigated using the galvanostatic charge-discharge and cyclic voltammetry (CV) measurements. Three-electrode cells were fabricated using the carbon nanomaterials and nano-carbon/Si composites as anode materials and LiPF₆ and LiClO₄ as electrolytes of Li secondary batteries. Reversibility using LiClO₄ as an electrolyte was superior to that of LiPF₆ as the electrolyte. The initial discharge capacities of nano-carbon/Si composites were increased compared to the initial discharge capacities of nano-carbon materials.

• Textile Coloration and Finishing
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• v.5 no.3
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• pp.194-205
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• 1993

Plasma polymerization in prepared glow discharge was carried out to improve the bathochromic of dyed PET fabrics by using silicon containing vinyl monomer in plasma polymerization equipment which consists of a pair of electrodes was connected to the 13.56MHz RF generator. The optimum condition for the bathochromic effect was investigated on various plasma polymeriztion parameters. By plasma polymerization used silicon containing vinyl monomer, the bathochromic of dyed PET fabrics was very enhanced. The optimum conditions on this equipment were as follows ; electrode distance : 3cm, discharge output : 60W, gas pressure : 0.3 Torr, monomer flow rate : 30㎤/min. plasma polymerization time : 60sec. The apparent strength of plasma polymerized PET fabrics was increased about 40∼47% with decreasing about 3 of L value.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.10
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• pp.3853-3858
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• 2010

This paper shows electrical analysis of the silicon solar cell according to the various ARC thickness using Medici program. we built a mesh structure of the solar cell that use ARC consisting of ITO(Indium-Tin-Oxide) transparent electrode, for the Medici modeling. About various oxide layer thickness of the ARC for 30 nm, 60 nm, 90 nm, changes of the I-V curve, Isc, Voc, transmittance and external collection efficiency performed according to wavelength of Incident ray. Simulation results show maximum power 22 mW/$cm^2$, fill factor 0.83 in condition of 60 nm ITO thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.6
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• pp.1128-1135
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• 2001

In this paper, a new HSG-Si formation technology, "seeding method', which employs Si$_2$H$_{6}$-molecule irradiation and annealing, was applied for realizing 64Mbit DRAMs. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous-doped amorphous-Si electrode. The new HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors. In this technique, optimum process conditions of the phosphorous concentration, storage polysilicon deposition temperature and thickness of hemispherical grain silicon are in the range of 3.0-4.0E19atoms/㎤, 53$0^{\circ}C$ and 400$\AA$, respectively. In the 64M bit DRAM capacitor using optimum process conditions, limit thickness of dielectric nitride is about 65$\AA$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.2
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• pp.481-487
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• 1996

A snapping-beam microswitch has been designed, fabricated and tested. From a design analysis, necessary and sufficient conditions for a snap-through switching fouction have been derived for a clamped shallow beam. The necessary condition has resulted in a geometric relation, in which the ratio of beam thickness to initial beam deflection plays a key role in the snapping ability. The sufficient condition for the snapping action has been obtained as a function of the inertia force due to applied acceleration, and the electrostatic force, adjustable by an inter-electrode voltage. For experimental investigations, a set of microbeams of silicon dioxide/$P^+$silicon bimorphs have been fabricated. Geometric size and mechanical behavior of each material film have been measured from on-chip test structures. Estimated and measured characteristics of the fabricated devices are compared.

• Advances in nano research
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• v.2 no.1
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• pp.23-56
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• 2014

The significant growth of the Si photovoltaic industry has been so far limited due to the high cost of the Si photovoltaic system. In this regard, the most expensive factors are the intrinsic cost of silicon material and the Si solar cell fabrication processes. Conventional Si solar cells have p-n junctions inside for an efficient extraction of light-generated charge carriers. However, the p-n junction is normally formed through very expensive processes requiring very high temperature (${\sim}1000^{\circ}C$). Therefore, several systems are currently under study to form heterojunctions at low temperatures. Among them, carbon nanotube (CNT)/Si hybrid solar cells are very promising, with power conversion efficiency up to 15%. In these cells, the p-type Si layer is replaced by a semitransparent CNT film deposited at room temperature on the n-doped Si wafer, thus giving rise to an overall reduction of the total Si thickness and to the fabrication of a device with cheaper methods at low temperatures. In particular, the CNT film coating the Si wafer acts as a conductive electrode for charge carrier collection and establishes a built-in voltage for separating photocarriers. Moreover, due to the CNT film optical semitransparency, most of the incoming light is absorbed in Si; thus the efficiency of the CNT/Si device is in principle comparable to that of a conventional Si one. In this paper an overview of several factors at the basis of this device operation and of the suggested improvements to its architecture is given. In addition, still open physical/technological issues are also addressed.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.12
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• pp.1245-1251
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• 2013

This study has focused on development of ELID monitoring system and its application to ELID grinding of structural ceramics. ELID monitoring system was consisted of grinding equipment, ELID power supply, grinding wheel, electrode and monitoring program. It can give a real time data to check spindle grinding resistance, wheel revolution, dressing current and voltage in ELID grinding process. The performance of developed system was evaluated by applying to grinding of structural ceramics, silicon carbide and alumina. As the results of experiments, monitored data for spindle resistance and ELID dressing current was useful to check steady-state ELID grinding process. From the comparison of spindle resistance between ELID grinding and conventional grinding process according to change of depth of cut, it could be confirmed that the spindle resistance in ELID grinding was lower than conventional grinding process.