• Journal of Powder Materials
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• v.15 no.1
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• pp.46-52
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• 2008

The restrictor, which is a fluid channel from a reservoir to a chamber inside a thermal micro actuator, has been fabricated using ArF and KrF excimer lasers, Diode-Pumped Solid State Lasers (DPSSL) and femtosecond lasers for a feasibility study. A numerical model of fluid dynamics for the actuator chamber and restrictor is presented. The model includes bubble formation and growth, droplet ejection through nozzle, and dynamics of fluid refill through the restrictor from a reservoir. Since an optimized and well-fabricated restrictor is important for a high frequency actuator, some special beam delivery setups and post processing techniques have been researched and developed. The effects of variations of the restrictor length, diameter, and tapered shapes are simulated and the results are analyzed to determine the optimal design. The numerical results of droplet velocity and volume are compared with the experimental results of a cylindrical-shaped actuator. It is found that the micro actuators having tapered restrictors show better high frequency characteristics than those having a cylindrical shape without any notable decrease of droplet volume. The laser-fabricated restrictors demonstrate initial feasibility for the laser direct ablation technique although more development is required.

• Journal of Sensor Science and Technology
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• v.15 no.5
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• pp.334-340
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• 2006

A compact biosignal monitoring device was developed. Electrodes for electrocardiogram (ECG) and a LED and silicon detector for photoplethysmogram (PPG) were used. A lead II type was arranged for ECG measurement and reflected light was measured at the finger tip for PPG. A single chip microprocessor (model ADuC812, Analog Device) controlled a measurement protocol and processed measured signals. PPG and ECG had a sampling rate of 300 Hz with 8-bit resolution. The maximum power consumption was 100 mW. The microprocessor computed pulse transit time (PTT) between the R-wave of ECG and the peak of PPG. To increase the resolution of PTT, analog peak detectors obtained the peaks of ECG and PPG whose interval was calculated using an internal clock cycle of 921.6 kHz. The device was designed to be operated by 3-volt battery. Biosignals can be measured for $2{\sim}3$ days continuously without the external interruptions and data is stored to an on-board memory. Our system was successfully tested with human subjects.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1284-1287
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• 2007

Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.834-838
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• 2002

In this paper, we have fabricated 4H-SiC schottky diodes utilizing a metal-oxide overlap structure for electric filed termination. The barrier height and Ideality factor were measured by current-voltage, capacitance-voltage characteristics. Schottky barrier height(SBH) were 1.41ev for Ni and 1.35eV for Pt, 1.52eV for Pt/Ti at room temperature and Pt/Ti Schottky diode exhibited Ideality factor was 1.06 to 1.4 in the range of $25^{\circ}C{\sim}200^{\circ}C$. To improve the reverse bias characteristics, an edge termination technique is employed for Pt/Ti/4H-SiC Schottky rectifiers and the device show excellent characteristics with higher blocking voltage up to 780V compared with unterminated devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.71-74
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• 2006

In this paper, we investigated the characterization of silicon oxide(SiOx) thin film on Ethylene Terephthalate(PET) substrates by e-beam deposition for transparent barrier application. The temperature of chamber increases from $30^{\circ}C$ to $110^{\circ}C$, the roughness increase while the Water vapor transmission rate (WVTR) decreases. Under these conditions, the WVTR for PET can be reduced from a level of $0.57 g/m^2/day$ (bare subtrate) to $0.05 g/m^2/day$ after application of a 200-nm-thick $SiO_2$ coating at 110 C. A more efficient way to improve permeation of PET was carried out by using a double side coating of a 5-${\mu}m$-thick parylene film. It was found that the WVTR can be reduced to a level of $-0.2 g/m^2/day$. The double side parylene coating on PET could contribute to the lower stress of oxide film, which greatly improves the WVTR data. These results indicates that the $SiO_2$ /Parylene/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.133-133
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• 2010

We studied the thermal and electric effect of 2D and 3D p-n photovoltaic diode structures with and without surface texturing. By analyzing the numerical simulation results of I-V characteristics and lattice temperature distributions, we systematically studied the effect of different texturing structures and different doping concentration on the characteristics of the silicon p-n photovoltaic devices. The, efficiency of the device with the surface texturing shows more than ~ 2% enhancement compared to the reference devices without texturing. The tendency of the efficiency of doping concentration has been studied with boron doping of $10^{14}{\sim}10^{17}cm^{-3}$ and phosphorus doping of $10^{15}cm^{-3}$. In addition to that, the study of changing phosphorus doping of $10^{15}{\sim}10^{18}cm^{-3}$ with boron doping of $10^{14}cm^{-3}$ has been examined. It has been shown that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.4
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• pp.348-352
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• 2016

This paper addresses the efficient improvement of the Switched Reluctance Motor(SRM) by the proper voltage excitation. In the case of loads with large operational motor-speed differences such as washing machine, an SRM system driven by a constant DC-link voltage is not useful for improving the efficiency. To reduce the effect of the excess DC-link voltage, AC-DC control converter that uses a silicon controlled rectifier instead of diode rectifier is employed in the SRM driver system. AC-DC control converter supplies a proper link voltage for low-speed operation. The experimental results demonstrated that the efficiency of the system was improved at low speeds.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.1379-1384
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• 2009

High power light emitting diode(LEDs), a strong candidate for the next generation general illumination applications are of interest. With major advantages of power saving, increased life expectancy and faster response time over traditional incandescent bulb, the LEDs are rapidly taking over many applications such as LCD backlighting, traffic light, automotive lighting, signage, etc. The increased electrical currents used to drive the LEDs have focused more attention on the thermal management because the efficiency and reliability of the solid-state lighting devices strongly depend on successful thermal management. There exist some problems that are caused by heat generation in the LED package, such as wire breakage, yellowing of epoxy resin, lifted chip caused by reflow of thermal paste chip attach and interfacial separation between LED package and silicon resin. The goal of this study is to analyze high power LED thermal properties of using pulsating heat pipe.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.481-485
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• 2015

We investigated the effects of annealing on the electrical and thermal properties of ZTO/4H-SiC heterojunction diodes. A ZTO thin film layer was grown on p-type 4H-SiC substrate by using solution process. The ZTO/SiC heterojunction structures annealed at $500^{\circ}C$ show that $I_{on}/I_{off}$ increases from ${\sim}5.13{\times}10^7$ to ${\sim}1.11{\times}10^9$ owing to the increased electron concentration of ZTO layer as confirmed by capacitance-voltage characteristics. In addition, the electrical characterization of ZTO/SiC heterojunction has been carried out in the temperature range of 300~500 K. When the measurement temperature increased from 300 K to 500 K, the reverse current variation of annealed device is higher than as-grown device, which is related to barrier height in the ZTO/SiC interface. It is shown that annealing process is possible to control the electrical characteristics of ZTO/SiC heterojunction diode.